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Analysis of Electrical Properties of Ti/Pt/Au Schottky Contacts on (n)GaAs Formed by Electron Beam Deposition and RF Sputtering  

Sehgal, B-K (Solid State Physics Laboratory)
Balakrishnan, V-R (Solid State Physics Laboratory)
R Gulati (Solid State Physics Laboratory)
Tewari, S-P (Department of Physics, University of Delhi)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.3, no.1, 2003 , pp. 1-12 More about this Journal
Abstract
This paper describes a study on the abnormal behavior of the electrical characteristics of the (n)GaAs/Ti/Pt/Au Schottky contacts prepared by the two techniques of electron beam deposition and rf sputtering and after an annealing treatment. The samples were characterized by I-V and C-V measurements carried out over the temperature range of 150 - 350 K both in the as prepared state and after a 300 C, 30 min. anneal step. The variation of ideality factor with forward bias, the variation of ideality factor and barrier height with temperature and the difference between the capacitance barrier and current barrier show the presence of a thin interfacial oxide layer along with barrier height inhomogenieties at the metal/semiconductor interface. This barrier height inhomogeneity model also explains the lower barrier height for the sputtered samples to be due to the presence of low barrier height patches produced because of high plasma energy. After the annealing step the contacts prepared by electron beam have the highest typical current barrier height of 0.85 eV and capacitance barrier height of 0.86 eV whereas those prepared by sputtering (at the highest power studied) have the lowest typical current barrier height of 0.67 eV and capacitance barrier height of 0.78 eV.
Keywords
Schottky contact; MESFET; Barrier height inhomogeneity; temperature variation;
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1 B.K.Sehgal, B.Bhattacharya, S.Vinayak and R.Gulati, Thin Solid Films, 330, 146 (1998)   DOI   ScienceOn
2 H.K.Henisch, Semiconductor contacts, Oxford Univ. Press. (1984)
3 M.Forment, R.L.V.Meirhaeghe, A.D.Vrieze, K.Strubbe and W.P.Gomes, Semicond. Sci. Technol., 16, 975 (2001)   DOI   ScienceOn
4 S.Dhar, V.R.Balakrishnan, V.Kumar and S.Ghosh, IEEE Trans. Electron Dev., 47, 282 (2000)   DOI   ScienceOn
5 F.A.Padovani, Semiconductors and semi-metals (ed. Wilardson RK, Beer AC ) NY, Academic Press (1971)
6 J.Tersoff, Phys. Rev., B35, 6182 (1987)   DOI   ScienceOn
7 R.F.Schmitsdroff, T.U.Kampen and W.Monch, J. Vac. Sci. Technol., B15, 1221 (1997)   DOI   ScienceOn
8 M.K.Hudait, P.Venkateswarlu and S.B.Krupanidhi, Solid State Electron., 45, 133 (2001)   DOI   ScienceOn
9 S.Ashok, J.M.Borego and R.J.Gutman, Solid State Electron., 22, 621 (1979)   DOI   ScienceOn
10 Zs.Horwvath, Mater. Res. Soc. Symp. Proc, 260, 359 (1992)
11 I.Ohdomari and K.N.Tu, J. Appl. Phys., 51, 3735 (1980)   DOI   ScienceOn
12 S.Zhu, R.L.V.Meirhaeghe, C.Detavernier, F.Cardon, G.Ru and B.Z.Li, Solid State Electron., 44, 663 (2000)   DOI   ScienceOn
13 J.H.Werner and H.H.Guttler, J. Appl. Phys., 73 1315 (1993)   DOI
14 H.Palm, M.Arbes and M.Schulz, Phys. Rev. Lett., 71, 2224 (1993)   DOI   ScienceOn
15 S.Chand and J.Kumar, Semicond. Sci. Technol., 12, 899 (1997)   DOI   ScienceOn
16 P.Revva, J.M.Langer, M.Missous and A.R.Peaker, J.Appl. Phys., 74, 416 (1993)   DOI   ScienceOn
17 A.Olbrich, J.Vancea, F.Kreupl and H.Hoffman, J. Appl. Phys., 83, 358 (1998)   DOI   ScienceOn
18 G.M.Vanalme, L.Goubert, R.L.V.Meirhaeghe, F.Cardon and P.V.Daele, Semicond. Sci. Technol., 14, 871 (1999)   DOI   ScienceOn
19 A.Gumus, A.Turut and N.Yalcin, J. Appl. Phys., 91, 245 (2002)   DOI   ScienceOn
20 Y.P.Song, R.L.V.Meirhaeghe, W.T.Laflere and F.Cardon, Solid State Electron., 29, 633 (1986)   DOI   ScienceOn
21 J.R.Waldrop, Appl. Phys. Lett., 44, 1002 (1984)   DOI   ScienceOn
22 J.H.Werner and H.H.Guttler, J. Appl. Phys., 69, 1522 (1991)   DOI
23 R.T.Tung, Appl. Phys. Lett., 58, 2821 (1991)   DOI
24 E.Grussel, S.Berg and L.P.Andersson, J. Electrochem. Soc., 127, 1571 (1980)   DOI
25 R.T.Tung, Phys. Rev., B45, 13509 (1992)   DOI   ScienceOn
26 S.J.Fonash, S.Ashok and S.Singh, Appl. Phys. Lett., 39, 423 (1981)   DOI
27 K.Maeda, H.Ikoma, K.Sato and T.Ishida, Appl. Phys. Lett., 62, 2560 (1993)   DOI   ScienceOn
28 H.Ikoma, T.Ishida, K.Sato, T.Ishikawa and K.Maeda, J. Appl. Phys., 73, 1272 (1993)   DOI
29 H.W.Hubers and H.P.Roser, J. Appl. Phys., 84, 5826 (1998)   DOI
30 V.W.L.Chin, M.A.Green and J.W.V.Storey, J. Appl. Phys., 68, 3470 (1990)   DOI
31 W.J.Devlin, Electronics lett., 16, 92 (1980)   DOI
32 E.H.Rhoderick, R.H.Williams, Metal-Semiconductor Contacts, Oxford, Clarendon Press (1988)
33 B.L.Sharma, Metal-Semiconductor Schottky Barrier Junctions and their applications (ed. B.L.Sharma), New York, Plenum (1984)
34 S.M.Sze, Physics of Semiconductor Devices 2nd ed., New York, Wiley (1981)
35 S.P.Kwok, J. Vac. Sci. Technol., B4, 1383 (1986)   DOI
36 F.D.Auret, S.A.Goodman, Y.Leclerc, G.Myburg and C.Schutte, Materials Science and Technology, 13, 945 (1997)   DOI
37 A.Cola, M.G.Lupo, L.Vasanelli and A.Valentini, J. Appl. Phys., 71, 4966 (1992)   DOI
38 A.Zussman, J. Appl. Phys., 59, 3894 (1986)   DOI
39 M.D.Dio, A.Cola, M.G.Lupo and L.Vasanelli, Solid State Electron., 38, 1923 (1995)   DOI   ScienceOn
40 B.K.Sehgal, R.Gulati, A.A.Naik, S.Vinayak, D.S.Rawal, H.S.Sharma, Materials Science and Engineering B48, 229 (1997)   DOI   ScienceOn
41 Y.T.Kim, C.W.Lee, and D.J.Kim, Appl. Phys. Lett., 72, 1507 (1998)   DOI   ScienceOn