• Tuberculosis and Respiratory Diseases
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• v.40 no.4
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• pp.378-383
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• 1993

Background: In recent reports, it has been reported that increased coagulation and decreased fibrinolytic activity has been responsible for abnormal fibrin turnover in exudative pleural effusion. In the cases of empyema, the fibrinopurulent stage is characterized by the fibrin deposition resulting in formation of limiting membranes in the visceral and parietal pleura. Recently attention has been focused on intrapleural fibrinolytic therapy capable of removing intrapleural fibrin deposits by urokinase (UK) in the treatment of empyema. However, these clinical trials have provided the clinical evidences for resolution of pleural loculation after intrapleural urokinase injection (UK-injection), the profiles of fibrinolytic activity following the treatment were still not investigated. Therefore in order to demonstrate the fibrinolytic evidences behind the clinical efficacy of intracavitary UK-injection, we examined intrapleural plasminogen activator activity (PA-activity) and D-dimer (D-Di) concentrations before and after each repeated UK-injection into the pleura in subjects with loculated empyema cavity. Methods: In a group of 14 patients with multiple loculated empyema cavity, PA-activity and D-Di concentrations were measured before and after repeated UK-injection. One hundred thousand IU of UK was injected at each time and all sujects had at least two times of UK injection accoring to clinical decisions. Nine out of 14 sujects had three times of UK-injection. Results: The mean (${\pm}SE$) PA-activity prior to treatemnt was $10.5{\pm}7.0$ and it was increased to $91.9{\pm}27.0,\;432.3{\pm}177.1,\;170.0{\pm}85.3$ IU tPA/ml after first, second and third time of UK-injection respectively (p<0.01). D-Di concentrations were also increased from $4.16{\pm}1.06{\times}10^5$ to $9.62{\pm}1.54{\times}10^5,\;12.31{\pm}1.89{\times}10^5,\;8.54{\pm}1.56{\times}10^5$ ng/ml in the same order as above (p<0.05). Conclusion: The suppressed fibrinolytic activity in the empyema cavity get removed sinificantly after inrracavitary injection of urokinase by generation of additional intrapleural plasmin.

• Clean Technology
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• v.21 no.1
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• pp.68-75
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• 2015

In this study, we investigated the structure and properties of a highly heat conductive metal-ceramic core-shell CoAl₂O₄@Al micro-composite for heterogeneous catalysts support. The CoAl₂O₄@Al was prepared by hydrothermal surface oxidation of Al metal powder, which resulted in the structure with a high heat conductive Al metal core encapsulated by a high surface area CoAl₂O₄ shell. For comparison, CoAl₂O₄ was also prepared by co-precipitation method and also utilized for a catalyst support. Rh catalysts supported on CoAl₂O₄@Al and CoAl₂O₄ were prepared by incipient wetness impregnation and characterized by N₂ adsorption, X-ray diffraction (XRD), scanning electron microscopy (SEM), CO chemisorption, and temperature-programmed reduction (TPR). The properties of catalysts were investigated for glycerol steam reforming reaction for hydrogen production at 550 ℃. Rh/CoAl₂O₄@Al exhibited about 2.8 times higher glycerol conversion turnover frequency (TOF) than Rh/CoAl₂O₄ due to facilitated heat transport through the core-shell structure. The CoAl₂O₄@Al and CoAl₂O₄ also showed some catalytic activities due to a partial reduction of Co on the support, and a higher catalytic activity was also found on the CoAl₂O₄@Al core-shell than CoAl₂O₄. These catalysts, however, displayed deactivation on the reaction stream due to carbon deposition on the catalysts surface.

• Journal of the Korean Magnetics Society
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• v.19 no.3
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• pp.89-93
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• 2009

Amorphous $Ge_{1-x}Mn_x$ semiconductor thin films grown by low temperature vapor deposition were annealed, and their electrical and magnetic properties have been studied. The amorphous thin films were $1,000{\sim}5,000\;{\AA}$ thick. Amorphous $Ge_{1-x}Mn_x$ thin films were annealed at $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, $600^{\circ}C$ and $700^{\circ}C$ for 3 minutes in high vacuum chamber. X-ray diffraction analysis reveals that as-grown $Ge_{1-x}Mn_x$ semiconductor thin films are amorphous and are crystallized by annealing. Crystallization temperature of amorphous $Ge_{1-x}Mn_x$ semiconductor thin films varies with Mn concentration. Amorphous $Ge_{1-x}Mn_x$ thin films have p-type carriers and the carrier type is not changed during annealing, but the electrical resistivity increases with annealing temperature. Magnetization characteristics show that the as-grown amorphous $Ge_{1-x}Mn_x$ thin films are ferromagnetic and the Curie temperatures are around 130 K. Curie temperature and saturation magnetization of annealed $Ge_{1-x}Mn_x$ thin films increase with annealing temperature. Magnetization behavior and X-ray analysis implies that formation of ferromagnetic $Ge_3Mn_5$ phase causes the change of magnetic and electrical properties of annealed $Ge_{1-x}Mn_x$ thin films.

• Journal of the Korean Magnetics Society
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• v.13 no.5
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• pp.187-192
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• 2003

The magnetic and thermal properties of NiFe/[IrMn-Mn]/CoFe with Mn additions have been studied. As-deposited CoFe pinned layers with [IrMn-Mn]layer had dominantly larger exchange biasing field ( $H_{ex}$) and blocking temperature ( $T_{b}$) than those with pure I $r_{22}$M $n_{78}$ used. The $H_{ex}$ and $T_{b}$ improved with 76.8-78.1 vol% Mn, but those of the NiFe/IrMn/CoFe dropped considerably with more addition of 0.6 vol % Mn. The average x-ray diffraction peak ratios of fcc [(111)CoFe, NiFe]/(111)IrM $n_3$ textures for the Mn inserted total vol of 75.5, 77.5, and 79.3% were about 1.4, 0.8, and 0.6, respectively. For the sample without Mn inserted layer, the $H_{ex}$ between IrMn and CoFe layers was almost zero, but it increased to 100 Oe after annealing of 250 $^{\circ}C$. For as-grown two multilayers samples with ultra-thin Mn layers of 77.5 and 78.7 vol %, the $H_{ex}$s were 259 and 150 Oe, respectively. In case of IrMn with 77.5 vol% Mn, the $H_{ex}$ was increased up to 475 Oe at 350 $^{\circ}C$ but decreased to 200 Oe at 450 $^{\circ}C$, respectively. The magnetic properties and thermal stabilities of NiFe/[IrMn-Mn]/CoFe multilayer were enhanced with Mn additions. In applications where higher $H_{ex}$ and $T_{b}$ are required, proper contents of Mn can be used. be used. used.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.265-273
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• 1997

The MR ratios and the exchange biasing field and interlayer coupling field were investigated in $Ni_{91}Fe_{19}/Co_{90}Fe_{10}/Cu/Co_{90}Fe_{10}/NiO$ spin-valve sandwiches grown on antiferromagnetic NiO films as a function of the NiO thickness, the thickness of Cu and pinning layer $Co_{90}Fe_{10}$. The spin-valve sandwiches were deposited on the Corning glass 7059 by means of the 3-gun dc and 1-gun rf magnetron sputtering at a 5 mtorrpartial Ar pressure and room temperature. The deposition field was 50 Oe. The MR curve was measured by the four-terminal method with applied magnetic soft bilayer [NiFe/CoFe] (90$\AA$) decreased dramatically to less than 10 Oe when the NiFe/CoFe bilayer used an NiFe bilayer thicker that 20$\AA$. So NiFe layer improved the softmagnetic properties in the NiFe/CoFe bilayer. The GMR ratio and the magnetic field sensitivity of the spin-valve film $Ni_{91}Fe_{19}(40{\AA})/Co_{90}Fe_{10}(50{\AA}) /Cu(30{\AA})/Co_{90}Fe_{10}(35{\AA})/NiO(800{\AA})$ was 6.3% and about 0.5 (%/Oe), respectively. The MR ratio had 5.3% below an annealing temperature of 20$0^{\circ}C$ which slowly decreased to 3% above 30$0^{\circ}C$. The large blocking temperature of the spin-valve film was taken (as being) due to the good stability of the NiO films. Thus, the spin-valve films with a free NiFe/CoFe layer clearly had a high large GMR output and showed a effective magnetic field sensitivity for a suitable spin-valve head material.

• Particle and aerosol research
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• v.11 no.3
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• pp.63-75
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• 2015

Atmospheric environment in Korea is influenced by outside, especially China. The concentrations of air pollutants in China have showed decreasing trends since 2000. However, these concentration levels in China are still higher than other developed countries. The Chinese Government has tried several measures to control the air pollution. In this study, the details of the amendments and smog reduction strategies in China, especially for Beijing are reviewed and the strategies for Korean side to promote cooperation in Northeast Asia are suggested and discussed. The Chinese State Council amended the Environmental Protection Provisions and Clean Air Act and announced The Action Plan for Air Pollution Control (2013-2017), focusing on three key regions, Beijing-Tianjin-Hebei area (Jing-Jin-Ji), Yangtze River Delta (YRD) and Pearl River Delta (PRD). These policy actions and plan are mainly for the reducing coal usage and emissions from vehicles. It is suggested that, Korea should actively promote multi-national cooperation in the region to take an initiative role in environmental areas.

• Journal of the korean academy of Pediatric Dentistry
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• v.32 no.3
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• pp.576-583
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• 2005

Tooth formation is a complex developmental process that is mediated through a series of reciprocal epithelial-mesenchymal interactions. Several signal pathways and transcription factors have been implicated in regulating molar crown development, but relatively little is known about the regulation of root development. It was reported that NFI-C knockout mice showed abnormal root formation with normal crown. The aims of this study are to elucidate how the NFI-C regulate the determine of root shape and odontoblasts differentiation. We carried out immunohistochemistry using cytokeratin to investigate the role of Hertwig's epithelial root sheath and DSPP mRNA in-situ hybridization to conform the nature of root dentin during root development in NFI-C knockout mice. Cytokeratin reacted with all the HERS cells and the continuity of cytokeratin positive cells between the HERS cells and enamel epithelium was lost in the cervical region both wild and K/O types. After root dentin deposition cytokeratin positive-HERS cells showed irregularity and loss of polarity in the cervical region in K/O type. DSPP mRNA was strongly expressed in odontoblasts of crown and root dentin in wild type mice, whereas expression of DSPP mRNA was restricted in odontoblast of crown dentin in the K/O type. During root formation in NFI-C knockout mice, HERS normally grow out of the crown but fail to induce odontoblast differentiation in root portion. These results suggest that NFI-C may play important roles in odontoblast differentiation during root dentin formation.

• Proceedings of the Ginseng society Conference
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• 1988.08a
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• pp.47-54
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• 1988

Cholesterol a component of all eucaryotic plasma membranes. is essential for the growth and viability of cells in higher organisms. However. too much cholesterol can be lethal because of atherosclerosis resulting from the deposition of cholesterol ester plaques. It was attempted in this study to understand the preventive effect of ginseng saponin. one of the major components of the roots of Panax ginseng C.A. Meyer. against hypercholesterolemia induced by high cholesterol diet. $^{125}I-LDL$ was injected intravenously to rabbits and rats. which were fed a high cholesterol diet with and/or without ginseng saponin for 12 days. The disappearance of the radioactivity occurred faster in the test group than the control. The effect of saponin fraction from Panax ginseng C.A. Meyer and the purified ginsenosilks. $Rb_1,\;Rb_2,\;Re\;and\;Rg_1,$ on LDL receptor biosynthesis in high cholesterol fed rat has been investigated. Analysis of LDL receptors from various organs such as liver. kidney. adrenal cortex and testis showed that the population of LDL receptors of test group significantly higher than that of the control. It was also found that liver homogenate containing ginsenosides $(10^{-3}-10^{-4}\%)$ stimulated the biosynthesis of bile acid form cholesterol. From the above results. it seemed that ginsenosides lower the cholesterol level by stimulating cholesterol metabolism. which result in the suppression of the inhibitory action of cholesterol on LDL receptor biosynthesis.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.211-216
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• 2010

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.5}Al_{0.5}As$ buffer layers have been studied by using photoluminescence (PL) and time-resolved PL measurements. A$1-{\mu}m$ thick $In_{0.5}Al_{0.5}As$ buffer layers were deposited on a 500 nm thick GaAs layer, followed by the deposition of the InGaAs/InAlAs MQWs. In order to investigate the effects of InAlAs buffer layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of InAlAs buffer layer. The growth temperature for InAlAs buffer layer was varied from 320^{\circ}C to $580^{\circ}C$. The MQWs consist of three $In_{0.5}Ga_{0.5}$As wells with different well thicknesses (2.5 nm, 4.0 nm, and 6.0 nm thick) and 10 nm thick $In_{0.5}Al_{0.5}$As barriers. The PL spectra from the MQWs with InAlAs layer grown at lower temperature range ($320-580^{\circ}C$) showed strong peaks from 4 nm QW and 6 nm QW. However, for the MQWs with InAlAs buffer grown at higher temperature range ($320-480^{\circ}C$), the PL spectra only showed a strong peak from 6 nm QW. The strongest PL intensity was obtained from the MQWs with InAlAs layer grown at the fixed temperature of $480^{\circ}C$, while the MQWs with buffer layer grown at higher temperature from $530^{\circ}C$ to $580^{\circ}C$ showed the weakest PL intensity. From the emission wavelength dependence of PL decay times, the fast and slow decay times may be related to the recombination of carriers in the 4 nm QW and 6 nm QW, respectively. These results indicated that the growth temperatures of InAlAs layer affect the structural and optical properties of the MQWs.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.528-537
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• 2008

60 nm and 20 nm thick hydrogenated amorphous silicon(a-Si:H) layers were deposited on 200 nm $SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by an e-beam evaporator. Finally, 30 nm-Ni/(60 nm and 20 nm) a-Si:H/200 nm-$SiO_2$/single-Si structures were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 40 sec. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy(FE-SEM), transmission electron microscopy(TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide from the 60 nm a-Si:H substrate showed low sheet resistance from $400^{\circ}C$ which is compatible for low temperature processing. The nickel silicide from 20 nm a-Si:H substrate showed low resistance from $300^{\circ}C$. Through HRXRD analysis, the phase transformation occurred with silicidation temperature without a-Si:H layer thickness dependence. With the result of FE-SEM and TEM, the nickel silicides from 60 nm a-Si:H substrate showed the microstructure of 60 nm-thick silicide layers with the residual silicon regime, while the ones from 20 nm a-Si:H formed 20 nm-thick uniform silicide layers. In case of SPM, the RMS value of nickel silicide layers increased as the silicidation temperature increased. Especially, the nickel silicide from 20 nm a-Si:H substrate showed the lowest RMS value of 0.75 at $300^{\circ}C$.