• 한국표면공학회지
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• 제54권6호
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• pp.365-370
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• 2021

In this research, we proceeded with research on plasma resistance of the cleaning process of APS(Atmospheric Plasma Spray)-Y₂O₃ coated parts used for semiconductor and display plasma process equipment. CF₄, O₂, and Ar mixed gas were used for the plasma environment, and respective alconox, surfactant, and piranha solution was used for the cleaning process. After APS-Y₂O₃ was exposed to CF₄ plasma, the surface changed from Y₂O₃ to YF₃ and a large amount of carbon was deposited. For this reason, the plasma corrosion resistance was lowered and contamination particles were generated. We performed a cleaning process to remove the defect-inducing surface YF₃ layer and carbon layer. Among three cleaning solutions, the piranha cleaning process had the highest detergency and the alconox cleaning process had the lowest detergency. Such results could be confirmed through the etching amount, morphology, composition, and accumulated contamination particle analysis results. Piranha cleaning process showed the highest detergency, but due to the very large thickness reduction, the base metal was exposed and a large number of contaminated particles were generated. In contrast, the surfactant cleaning process exhibit excellent properties in terms of surface detergency, etching amount, and accumulated contamination particle analysis.

• 한국산학기술학회논문지
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• 제22권5호
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• pp.554-560
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• 2021

크러드는 원자력 발전소 운전 시 핵연료 표면에 침적되는 철-니켈-크롬 등의 금속 산화물로 이루어진 다공성 물질이다. 그 두께는 수십 ㎛ 수준이다. 발전소의 냉각재상실사고 시 크러드 층은 핵연료-냉각수 열전달에 영향을 미치게 되어 원전 안전성 측면에서 그 영향을 살펴보는 것이 중요하다. 일반적으로 크러드는 열저항으로 인하여 핵연료 온도를 높이는 부정적 효과가 있는 것으로 알려져 있었다. 그 이유는 크러드에 의하여 핵비등, 최소막비등온도, 단상증기 열전달, 임계열유속, 막비등 열전달 등 2상유동 열전달 특성을 고려하지 않았기 때문이다. 본 연구에서는 다공성 크러드 물질의 물성치를 모델링하고 이를 국내 원전안전해석 코드인 SPACE에 탑재하였다. 크러드는 다공성 고체 물질이고 표면이 거칠기 때문에 최소막비등온도와 단상증기 열전달이 증가할 것으로 예상된다. 이에 최소막비등온도와 단상증기 열전달이 최대 피복재 온도 및 급냉에 미치는 영향을 평가하였다. 시험 계산은 기존 FLECHT-SEASET 재관수 실험 장치에 기반으로 수행되었다. 계산결과 최소막비등온도가 상승하여 급냉시간이 줄어들었다. 단상증기 열전달의 경우 약 20% 증가할 때까지는 최대 피복재 온도가 하강하였다. 크러드 층이 원전 안정성 측면에서 긍정적인 효과가 있음을 확인하였다.

• 한국표면공학회지
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• 제55권6호
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• pp.353-362
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• 2022

Recently, transmittance of photomasks for ultra-violet (UV) region is getting more important, as the light source wavelength of an exposure process is shortened due to the demand for technologies about high integration and miniaturization of devices. Meanwhile, such problems can occur as damages or the reduction of yield of photomask as electrostatic damage (ESD) occurs in the weak parts due to the accumulation of static electricity and the electric charge on chromium metal layers which are light shielding layers, caused by the repeated contacts and the peeling off between the photomask and the substrate during the exposure process. Accordingly, there have been studies to improve transmittance and antistatic performance through various functional coatings on the photomask surface. In the present study, we manufactured antireflection films of Nb₂O₅, | SiO₂ structure and antistatic films of ITO designed on 100 × 100 × 3 mmt sodalime glass by DC magnetron sputtering system so that photomask can maintain high transmittance at I-line (365 nm). ITO thin film deposited using In/Sn (10 wt.%) on sodalime glass was optimized to be 10 nm-thick, 3.0 × 103 𝛺/☐ sheet resistance, and about 80% transmittance, which was relatively low transmittance because of the absorption properties of ITO thin film. High average transmittance of 91.45% was obtained from a double side antireflection and antistatic thin films structure of Nb₂O₅ 64 nm | SiO₂ 41 nm | sodalime glass | ITO 10 nm | Nb₂O₅ 64 nm | SiO₂ 41 nm.

• 대한금속재료학회지
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• 제49권10호
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• pp.811-817
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• 2011

In this study, we have investigated the role of a metal oxide hole injection layer (HIL) between an Indium Tin Oxide (ITO) electrode and an organic hole transporting layer (HTL) in organic light emitting diodes (OLEDs). Nickel Oxide films were deposited at different deposition times of 0 to 60 seconds, thus leading to a thickness from 0 to 15 nm on ITO/glass substrates. To study the influence of NiO film thickness on the properties of OLEDs, the relationships between NiO/ITO morphology and surface properties have been studied by UV-visible spectroscopy measurements and AFM microscopy. The dependences of the I-V-L properties on the thickness of the NiO layers were examined. Comparing these with devices without an NiO buffer layer, turn-on voltage and luminance have been obviously improved by using the NiO buffer layer with a thickness smaller than 10 nm in OLEDs. Moreover, the efficiency of the device ITO/NiO (< 5 nm)/NPB/$Alq_3$/ LiF/Al has increased two times at the same operation voltage (8V). Insertion of a thin NiO layer between the ITO and HTL enhances the hole injection, which can increase the device efficiency and decrease the turn-on voltage, while also decreasing the interface roughness.

• 대한금속재료학회지
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• 제48권3호
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• pp.256-261
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• 2010

In this work, high-k dielectric stacks of $HfO_2$ and $HfO_2$/$Al_2O_3$/$HfO_2$ (HAH) were deposited on $SiO_2/Si$ substrates by atomic layer deposition as charge trapping layers in charge trapping devices. The structural stability and the charge trapping characteristics of such stacks were investigated using Metal-Alumina-Hafnia-Oxide-Silicon (MAHOS) structure. The surface roughness of $HfO_2$ was stable up to 11 nm with the insertion of 0.2 nm thick $Al_2O_3$. The effect of the thickness of the HAH stack and the thickness of intermediate $Al_2O_3$ on charge trapping characteristics were investigated for MAHOS structure under various gate bias pulse with duration of 100 ms. The threshold voltage shift after programming and erase showed that the memory window was increased with increasing bias on gate. However, the programming window was independent of the thickness of HAH charge trapping layers. When the thickness of $Al_2O_3$insertion increased from 0.2 nm to 1 nm, the erase window was decreased without change in the programming window.

• 대한금속재료학회지
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• 제49권6호
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• pp.493-497
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• 2011

The basic properties and electrical characteristics of sputtering films deposited with a commercial cast target and spark plasma sintering (SPS) were compared and analyzed. The results, revealed that, the Al film prepared by heating at $60^{\circ}C/min$ (SPS process) showed a specific resistance similar to the commercial cast Al film. In addition, the results of XRD, SIMS and TEM, showed that there was not much difference in the crystal structure and impurities between the two films. Consequently, the SPS Al target was found to have properties quite similar to the commercial one and it is expected to be applied in future research to the metal wiring material for semiconductor/display devices.

• 한국지구과학회지
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• 제43권5호
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• pp.569-578
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• 2022

백악기 중기, 세노마눔절-투로니아절에 발생한 해양 무산소 사건인 Oceanic Anoxic Event 2 (OAE2)는 다량의 유기물을 포함한 흑색셰일이 전세계적으로 퇴적된 단기간의 탄소 순환 교란 사건이다. 백악기 후기의 온실 지구의 환경(높은 CO₂농도, 고해수면, 해양의 무산소 환경 확장)은 탄소, 황 및 여타 주요 원소의 생지화학 순환의 교란과 밀접하게 상호 작용하였다. 1970년대 최초 명명 이후 동위원소를 포함한 화학적 지시자 연구가 활발하게 진행되었으며, 그 결과 화산 활동과 해양 표층의 유기물 생산 증가가 무산소 환경 발달의 주된 원인으로 여겨진다. 본 논평에서는 OAE2의 기작을 탄소 및 황, 미량 금속원소의 순환을 중심으로 살펴보고자 한다.

• 센서학회지
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• 제31권5호
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• pp.348-352
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• 2022

Hydrogen gas (H₂) which is odorless, colorless is attracting attention as a renewable energy source in varions applications but its leakage can lead to disastrous disasters, such as inflammable, explosive, and narcotic disasters at high concentrations. Therefore, it is necessary to develop H₂ gas sensor with high performance. In this paper, we confirmed that H₂ gas detection ability of SnO₂ based H₂ gas sensor along with thermal treatment effect of SnO₂. Proposed SnO₂ based H₂ gas sensor is fabricated by MEMS technologies such as photolithgraphy, sputtering and lift-off process, etc. Deposited SnO₂ thin films are thermally treated in various thermal treatement temperature in range of 500-900 ℃ and their H₂ gas detection ability is estimatied by measuring output current of H₂ gas sensor. Based on experimental results, fabricated H₂ gas sensor with SnO₂ thin film which is thermally treated at 700 ℃ has a superior H₂ gas detection ability, and it can be expected to utilize at the practical applications.

• 한국전자통신학회논문지
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• 제18권1호
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• pp.219-230
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• 2023

해양폐기물은 위치에 따라서 해안폐기물, 부유폐기물, 침적폐기물로 분류한다. 환경 문제에 대한 인식이 높아지면서 눈에 보이는 쓰레기들 외에 해양침적쓰레기에 대한 관리 및 수거가 필요하다. 우리나라 삼면의 바다 중 서해의 해양침적폐기물 종류별 분포 특성을 파악한 연구이다. 연구를 통해 폐합성수지, 고철, 폐타이어, 기타 순으로 많은 양이 나타난 것을 알 수 있었다. 특히, 서해 바다의 폐합성수지 심각성에 대해 보여주는 결과로 이로 인해 머지않아 해양생태계 뿐만 아니라 우리의 삶에도 막대한 영향을 미칠 것으로 보인다. 본 연구를 통하여 쉽게 알지 못하는 서해 침적쓰레기의 종류와 분포에 대해 인식하게 되고, 향후 수거활동에 도움이 되는 기초연구 자료로 활용될 수 있다.

• Tribology and Lubricants
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• 제39권1호
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• pp.8-12
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• 2023

This study presents a molecular simulation of adhesion control between carbon nanotube (CNT) and Ag thin film deposited on silicon substrate. Rough and flat Ag thin film models were prepared to investigate the effect of surface roughness on adhesion force. Heat treatment was applied to the models to modify the adhesion characteristics of the Ag/CNT interface based on thermal wetting. Simulation results showed that the heat treatment altered the Ag thin film morphology by thermal wetting, causing an increase in contact area of Ag/CNT interface and the adhesion force for both the flat and rough models changed. Despite the increase in contact area, the adhesion force of flat Ag/CNT interface decreased after the heat treatment because of plastic deformation of the Ag thin film. The result suggests that internal stress of the CNT induced by the substrate deformation contributes in reduction of adhesion. Contrarily, heat treatment to the rough model increases adhesion force because of the expanded contact area. The contact area is speculated to be more influential to the adhesion force rather than the internal stress of the CNT on the rough Ag thin film, because the CNT on the rough model contains internal stress regardless of the heat treatment. Therefore, as demonstrated by simulation results, the heat treatment can prevent delamination or wear of CNT coating on a rough metallic substrate by thermal wetting phenomena.