• Title/Summary/Keyword: Delay locked loop (DLL)

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Analysis of Chip Performance by Core and I/O SSN Noise on DLL Board (DLL 보드 상에 코어 및 I/O 잡음에 의한 칩의 성능 분석)

  • Cho, Sung-Gon;Ha, Jong-Chan;Wee, Jae-Kyung
    • Journal of the Microelectronics and Packaging Society
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    • v.13 no.4
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    • pp.9-15
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    • 2006
  • This paper shows the impedance profile of PEEC(Partial Equivalent Electrical Circuit) PDN(Power Distribution Networks) including core and I/O circuit. Through the simulated results, we find that the core power noise having connection with I/O power is affected by I/O switching. Also, using designed $74{\times}5inch$ DLL(Delay Locked Loop) test board, we analyzed the effect of power noise on operation region of chip. Jitter of a DLL measure for frequency of $50{\sim}400MHz$ and compared with impedance obtained result of simulation. Jitter of a DLL are increased near about frequency of 100MHz. It is reason that the resonant peak of PDNs has an impedance of more the 1ohm on 100MHz. we present the impedance profile of a chip and board for the decoupling capacitor reduced the target impedance. Therefore, power supply network design should be considered not only decoupling capacitors but also core switching current and I/O switching current.

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A Random and Systematic Jitter Suppressed DLL (무작위와 체계적인 것에 의한 지터를 제어하는 지연고정루프)

  • Ahn, Sung-Jin;Choi, Yong-Shig;Choi, Hyek-Hwan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2016.05a
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    • pp.693-695
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    • 2016
  • A random and systematic jitter suppressed DLL is presented. The AC averages the delay time of successive delay stages and equalizes the delay time of all delay stages. Measurement results of the DLL-based clock generator fabricated in a one-poly six-metal $0.18{\mu}m$ CMOS process shows 13.4-ps rms jitter.

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2-Stage Mixed-Mode Delay Locked Loop with Low Jitter (작은 지터를 가지는 2단 구조의 혼성모드 DLL)

  • Kim, Dae-Hee;Hwang, In-Seok
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.963-964
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    • 2006
  • By combining a digital DLL and an analog DLL in 2-stage, an improved DLL is implemented in this paper. The proposed DLL is composed of a RDLL (Register Controlled DLL) and a conventional analog DLL. The phase comparator used in the DLL is built with sense-amp based D flip-flops for high speed operation. The proposed DLL circuits have been designed, simulated in 0.18um, 1.8V TSMC CMOS library. The implemented DLL have demonstrated the fast lock-on time of 1us and low jitter of 72ps.

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A Clock Generator with Jitter Suppressed Delay Locked Loop (낮은 지터를 갖는 지연고정루프를 이용한 클럭 발생기)

  • Nam, Jeong-Hoon;Choi, Young-Shig
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.7
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    • pp.17-22
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    • 2012
  • A novel Clock Generator with jitter suppressed delay-locked loop (DLL) has been proposed to generate highly accurate output signals. The proposed Clock Generator has a VCDL which can suppress its jitter by generating control signals proportional to phase differences among delay stages. It has been designed to generate 1GHz output at 100MHz input with 1.8V $0.18{\mu}m$ CMOS process. The simulation result demonstrates a 3.24ps of peak-to-peak jitter.

A Low Jitter Delay-Locked Loop for Local Clock Skew Compensation (로컬 클록 스큐 보상을 위한 낮은 지터 성능의 지연 고정 루프)

  • Jung, Chae-Young;Lee, Won-Young
    • The Journal of the Korea institute of electronic communication sciences
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    • v.14 no.2
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    • pp.309-316
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    • 2019
  • In this paper, a low-jitter delay-locked loop that compensates for local clock skew is presented. The proposed DLL consists of a phase splitter, a phase detector(PD), a charge pump, a bias generator, a voltage-controlled delay line(VCDL), and a level converter. The VCDL uses self-biased delay cells using current mode logic(CML) to have insensitive characteristics to temperature and supply noises. The phase splitter generates two reference clocks which are used as the differential inputs of the VCDL. The PD uses the only single clock from the phase splitter because the PD in the proposed circuit uses CMOS logic that consumes less power compared to CML. Therefore, the output of the VCDL is also converted to the rail-to-rail signal by the level converter for the PD as well as the local clock distribution circuit. The proposed circuit has been designed with a $0.13-{\mu}m$ CMOS process. A global CLK with a frequency of 1-GHz is externally applied to the circuit. As a result, after about 19 cycles, the proposed DLL is locked at a point that the control voltage is 597.83mV with the jitter of 1.05ps.

Effect of Imperfect Power Control on Performance of a PN Code Tracking Loop for a DS/CDMA System

  • Kim, Jin-Young
    • Proceedings of the IEEK Conference
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    • 2000.06a
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    • pp.209-212
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    • 2000
  • In this paper, effect of imperfect power control on performance of a pseudonoise (PN) code tracking loop is analyzed and simulated for a direct-sequence/code-division multiple access (DS/CDMA) system. The multipath fading channel is modeled as a two-ray Rayleigh fading model. Power control error is modeled as a log-normally distributed random variable. The tracking performance of DLL (delay-locked-loop) is evaluated in terms of tracking jitter and mean-time-to-lose-lock (MTLL). From the simulation results, it is shown that the PN tracking performance is very sensitive to the power control error.

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A 1.7 Gbps DLL-Based Clock Data Recovery for a Serial Display Interface in 0.35-${\mu}m$ CMOS

  • Moon, Yong-Hwan;Kim, Sang-Ho;Kim, Tae-Ho;Park, Hyung-Min;Kang, Jin-Ku
    • ETRI Journal
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    • v.34 no.1
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    • pp.35-43
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    • 2012
  • This paper presents a delay-locked-loop-based clock and data recovery (CDR) circuit design with a nB(n+2)B data formatting scheme for a high-speed serial display interface. The nB(n+2)B data is formatted by inserting a '01' clock information pattern in every piece of N-bit data. The proposed CDR recovers clock and data in 1:10 demultiplexed form without an external reference clock. To validate the feasibility of the scheme, a 1.7-Gbps CDR based on the proposed scheme is designed, simulated, and fabricated. Input data patterns were formatted as 10B12B for a high-performance display interface. The proposed CDR consumes approximately 8 mA under a 3.3-V power supply using a 0.35-${\mu}m$ CMOS process and the measured peak-to-peak jitter of the recovered clock is 44 ps.

A CMOS IR-UWB RFIC for Location Based Systems (위치 기반 시스템을 위한 CMOS IR-UWB RFIC)

  • Lee, Jung Moo;Park, Myung Chul;Eo, Yun Seong
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.12
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    • pp.67-73
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    • 2015
  • This paper presents a fully integrated 3 - 5 GHz IR-UWB(impulse radio ultra-wide band) RFIC for Location based system. The receiver architecture adopts the energy detection method and for high speed sampling, the equivalent time sampling technique using the integrated DLL(delay locked loop) and 4 bit ADC. The digitally synthesized UWB impulse generator with low power consumption is also designed. The designed IR-UWB RFIC is implemented on $0.18{\mu}m$ CMOS technology. The receiver's sensitivity is -85.7 dBm and the current consumption of receiver and transmitter is 32 mA and 25.5 mA respectively at 1.8 V supply.

A Design of High Speed Infrared Optical Data Link IC (고속 적외선 광 송수신 IC 설계)

  • 임신일;조희랑;채용웅;유종선
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.26 no.12B
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    • pp.1695-1702
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    • 2001
  • This paper describes a design of CMOS infrared (IR) wireless data link IC which can be used in IrDA(Infrared Data Association) application from 4 Mb/s to 100 Mb/s The implemented chip consists of variable gain transimpedance amplifier which has a gain range from 60 dB to 100 dB, AGC (automatic gain control) circuits, AOC(automatic offset control) loop, 4 PPM (pulse position modulation) modulator/demodulator and DLL(delay locked loops). This infrared optical link If was implemented using commercial 0.25 um 1-poly 5-metal CMOS process. The chip consumes 25 mW at 100 Mb/s with 2.5 V supply voltage excluding buffer amplifier. The die area of prototype IC is 1.5 mm $\times$ 1 mm.

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