• Journal of IKEEE
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• v.20 no.3
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• pp.241-250
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• 2016

AVM(Around View Monitoring) is a function of ADAS(Advanced Driver Assistance Systems), which provides a bird's eye view of the surroundings of a vehicle to the user. AVM systems require large bandwidth since they are composed of four input images and require real-time processing for vehicle-embedded environments. Also, the memory bandwidth requirement increases greatly when the resolution of the input data is higher. In this paper, we propose four basic hardware models of AVM systems. The models are decided by whether or not there is a valid data extraction module and an image processing purpose LUT generation module. We analyze the required bandwidth and hardware resource for each model. For verification of the proposed models, we implemented an AVM system using XC7Z045 FPGA and DDR3 memory for VGA and FHD resolution. All four of the proposed hardware model is executed below 33ms, which shows that it can operate in real-time.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.116-124
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• 2001

We implemented POPeye (Probe of Performance ＋ eye), a system analysis simulator to evaluate DRAM performance in a personal computer environment. When running any real-life application programs such as Microsoft Office and Paint Shop Pro on Windows OS, POPeye simulates detailed transactions between a CPU and a memory system. Using this tool, we comparatively analyzed the performance of a DDR-SDRAM, a D-RDRAM, and a DDR-FCRAM.

• Journal of Astronomy and Space Sciences
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• v.33 no.3
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• pp.229-236
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• 2016

We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary metal-oxide-semiconductor (CMOS) technology). We compare our radiation tolerance data for LPDDR SDRAM with those of general DDR SDRAM. The data confirms that our devices under test (DUTs) are potential candidates for space flight applications.

• ETRI Journal
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• v.44 no.3
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• pp.450-461
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• 2022

The Gen-Z protocol is a memory semantic protocol between the memory and CPU used in computer architectures with large memory pools. This study presents the implementation of the Gen-Z hardware system configured using Gen-Z specification 1.0 and reports its performance. A hardware prototype of a DDR4 Gen-Z memory pool with an optimized character, a block device driver, and a file system for the Gen-Z hardware was designed. The Gen-Z IP was targeted to the FPGA, and a 512 GB Gen-Z memory pool was configured on an ×86 server. In the experiments, the latency and throughput of the Gen-Z memory were measured and compared with those of the local memory, SATA SSD, and NVMe using character or block device interfaces. The Gen-Z hardware exhibited superior throughput and latency performance compared with SATA SSD and NVMe at block sizes under 4 kB. The MySQL and File IO benchmark of Gen-Z showed good write performance in all block sizes and threads. Besides, it showed low latency in RocksDB's fillseq dbbench using the ext4 direct access filesystem.

• Proceedings of the KIEE Conference
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• 2006.10c
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• pp.446-448
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• 2006

DRAM with ECC is used widely and the size of DRAW increases. According to this, DRAM initial time, especially the time to make the whole area typical value, 0, increases. This paper introduces the method that without any additional hardware, using characteristic of DRAM and DRAM controller, minimize that memory initial time. Conservative reordering - it eliminates DRAM read time and makes write buffer used - reduces initial time to make the whole DRAM area 0, by 95.36% for DDR DRAM. 9341% for Rambus DRAM.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.91-95
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• 2017

Package-On-Package (PoP) technology is developing toward smaller form factors with high-speed data transfer capabilities to cope with high DDR4x memory capacity. The common application processor (AP) used for PoP devices in smartphones has the bottom package as logic and the top package as memory, which requires both thermally and electrically enhanced functions. Therefore, it is imperative that PoP designs consider both thermal and power distribution network (PDN) issues. Stacked packages have poorer thermal dissipation than single packages. Since the bottom package usually has higher power consumption than the top package, the bottom package impacts the thermal budget of the top package (memory). This paper investigates the thermal and electrical characteristics of PoP designs, particularly the bottom package. Findings include that via and dense via-cluster volume have an important role to lower thermal resistance to the motherboard, which can be an effective way to manage chip hot spots and reduce the thermal impact on the memory package. A Cu block and dense via-cluster layout with an optimal location are proposed to drain the heat from the chip hot spots to motherboard which will enhance thermal and electrical performance at the design stage. The analytical thermal results can be used for design guidelines in 3D packaging.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.20-30
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• 2001

A 1.8V $650{\;}\textrm{mm}^2$ 4Gb DRAM having $0.10{\;}\mu\textrm{m}^2$ cell size has been successfully developed using 0.11 $\mu\textrm{m}$DRAM technology. Considering manufactur-ability, we have focused on developing patterning technology using KrF lithography that makes $0.11{\;}\mu\textrm{m}$ DRAM technology possible. Furthermore, we developed novel DRAM technologies, which will have strong influence on the future DRAM integration. These are novel oxide gap-filling, W-bit line with stud contact for borderless metal contact, line-type storage node self-aligned contact (SAC), mechanically stable metal-insulator-silicon (MIS) capacitor and CVD Al process for metal inter-connections. In addition, 80 nm array transistor and sub-80 nm memory cell contact are also developed for high functional yield as well as chip performance. Many issues which large sized chip often faces are solved by novel design approaches such as skew minimizing technique, gain control pre-sensing scheme and bit line calibration scheme.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.3-5
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• 2000

1.8V,4Gb DDR SDRAM설계 및 제작을 수행하였다. DRAM동작 시 발생하는 Bit Line간 CouplingNoise를 보상하기 위한 Twisted Open Bit Line 구조를 제안하였다. Low Voltage Operation으로 인한 Bit Line Sense Amplifier 의 동작 저하를 보상하기 위한 BL S/A Pre-Sensing 방식 및 Reference Bit Line Voltage Calibration 구조를 제안하였다. Chip면적 증가로 인한 동작속도 감소의 보상을 위해 Repeater Driver 구조를 Core 및 Periphery Circuit에 적용하여 동작 대비 Chip 면적의 증가를 최소화 하도록 하였다.

• Journal of Advanced Navigation Technology
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• v.14 no.5
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• pp.767-774
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• 2010

Due to advantages of NAND flash memory such as non-volatility, low access latency, low energy consumption, light weight, small size and shock resistance, it has become a better alternative over traditional magnetic disk drives, and has been widely used. Traditional DBMSs including mobile DBMSs may run on flash memory without any modification by using Flash Translation Layer (FTL), which emulates a random access block device to hide the characteristics of flash memory such as "erase-before-update". However, most existing FTLs are optimized for file systems, not for DBMSs, and traditional DBMSs are not aware of them. Also, traditional DBMSs do not consider the characteristics of flash memory. In this paper, we propose a flash-conscious storage system for DBMSs that utilizes flash memory as a main storage medium, and carefully put the characteristics of flash memory into considerations. The proposed flash-conscious storage system exploits log records to avoid costly update operations. It is shown that the proposed storage system outperforms the state.

• Journal of IKEEE
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• v.19 no.3
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• pp.288-294
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• 2015

CRC function has been built into the high-speed semiconductor memory device in order to increase the reliability of data for high-speed operation. Also, DBI function is adopted to improve of data transmission speed. Conventional CRC(ATM-8 HEC code) method has a significant amounts of area-overhead(~XOR 700 gates), and processing time(6 stage XOR) is large. Therefore it leads to a considerable burden on the timing margin at the time of reading and writing of the low power memory devices for CRC calculations. In this paper, we propose a CRC method for low cost and high speed memory, which was improved 92% for area-overhead. For low-cost implementation of the CRC scheme by the DBI function it was supplemented by data bit error detection rate. And analyzing the error detection rate were compared with conventional CRC method.