• Journal of the Korean institute of surface engineering
• /
• v.39 no.3
• /
• pp.98-104
• /
• 2006

Al-doped ZnO (AZO) films were deposited on the plastic substrate by inductively coupled plasma (ICP) assisted DC magnetron sputtering. The AZO films were produced by sputtering a metallic target (Zn/Al) in a mixture of argon and oxygen gases. AZO films with an electrical resistivity of ${\sim}10^3\;{\Omega}cm$ and an optical transmittance of 80% were obtained even at a low deposition temperature. In-situ process control methods were used to obtain stable deposition conditions in the transition region without any hysteresis effect. The target voltage was controlled either at a constant DC power. It was found that the ratio of the zinc to oxygen emission intensity, I (O 777)/I (Zn 481) decreased with increasing the target voltage in the transition region. The $Ar/O_2$ plasma treatment improve the adhesion strength between the polycarbonate substrate and AZO films.

• Journal of the Korean institute of surface engineering
• /
• v.37 no.3
• /
• pp.146-151
• /
• 2004

Indium tin oxide (ITO) is widely used to make a transparent conducting film for various display devices and opto-electric devices. In this study, ITO films on glass substrate were fabricated by inductively coupled plasma (ICP) assisted dc magnetron sputtering. A two-turn rf coil was inserted in the process chamber between the substrate and magnetron for the generation of ICP. The substrates were not heated intentionally. Subsequent post-annealing treatment for as-deposited ITO films was not performed. Low-temperature deposition technique is required for ITO films to be used with heat sensitive plastic substrates, such as the polycarbonate and acrylic substrates used in LCD devices. The surface roughness of the ITO films is also an important feature in the application of OLEDs along with the use of a low temperature deposition technique. In order to obtain optimum ITO thin film properties at low temperature, the depositions were carried out at different condition in changing of Ar and $O_2$ gas mixtures, ICP power. The electrical, optical and structural properties of the deposited films were characterized by four-point probe, UV/VIS spectrophotometer, atomic force microscopy(AFM) and x-ray diffraction (XRD). The electrical resistivity of the films was -l0$^{-4}$ $\Omega$cm and the optical transmittance in the visible range was ＞85%. The surface roughness ( $R_{rms}$) was -20$\AA$.>.

• Journal of the Korean Vacuum Society
• /
• v.7 no.s1
• /
• pp.140-148
• /
• 1998

We prepared $C_3N_4$ films by rf plasma enhanced chemical vapor deposition(PCVD) and alternating $C_3N_4$/TiN composite films by dc magnetron sputtering. X-ray diffraction (XRD) and transmission electron diffraction (TED) revealed that the structure of the films is amorphous or polycrystalline, depending on deposition conditions and heat treatment. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy confirmed the presence of $sp_3\; and sp _2$ hybridized C atoms bonded with N atoms in the tetrahedral and hexagonal configurations, respectively. Graphite-free $C_3N_4$ films were obtained by PCVD under optimal conditions. To prepare well crystallized $C_3N_4$ films by magnetron sputtering, we introduced negatively biased gratings in the sputtering system. CN films deposited at grating voltages (Vg) lower than 400V are amorphous. Crystallites of cubic and $\beta$-$C_3N_4$ were formed at increased voltages.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.12 no.11
• /
• pp.4711-4717
• /
• 2011

Formation of TiN films by PVD method and the DC and RF sputtering deposition method can be applied, the injected gas to generate plasma ionization rate of the film forming speed is slow away, anything to increase the adhesion between films limitations have. To improve this, to investigate the deposition and ion beam evaporation simultaneously IBAD(Ion beam assisted deposition) when used, Ion beam surface coating material prior to the survey because the surface cleaning effect of a large, high film adhesion can be obtained. In addition, the high vacuum and low temperature, high purity thin film of uniform thickness in the benefits is.

• Journal of the Korean Vacuum Society
• /
• v.2 no.2
• /
• pp.152-160
• /
• 1993

In this study, we have investigated the influence of sputtering conditions (Ar pressure input powers, substrates) on coercivity and microstructures of GdFe, Co, CoCr thin films produced by the method of DC magnetron sputtering. In GdFe films, we have observed that the Gd atomic ratio was decreased with the deposition rate, and deposition rate decreased with the pressure of Ar gas and the increased linearly with input power. It was also observed that the coercivity of thin films was increased with input power. In Co films, we have investigated the deposition was increased and the Co thin film became finer structure with the increase in the input power, was increased and the Co thin film became finer structure with the increase in the input power, and the deposition rate was decreased with the pressure of Ar gas. In CoCr films, we have investigated the effects of substrates on the coercivity $(H_c)$ and the microstructure. We have found that the substrates plays a crucial role in the microstructure and the coercivity $(H_c)$.

• Journal of the Korean Applied Science and Technology
• /
• v.34 no.4
• /
• pp.1017-1024
• /
• 2017

Carbon thin films were deposited by HiPIMS(High Power Impulse Magnetron Sputtering). The properties and microstructures of carbon thin film were investigated with power, pressure, bias voltage and duty cycle. As the HiPIMS power increased, the deposition thickness increased and the surface tended to be rough. The increase in pressure also tended to make the surface rough, but the deposition thickness was not proportional to the pressure. As the bias voltage increased, the surface roughness became worse, the deposition thickness increased and then decreased from the critical bias voltage. Changes in the duty cycle have caused problems such as arcing, which is affected by the chamber structure and the size of the target. The $sp^2/sp^3$ fractions of thin films were estimated by XPS and it was confirmed that the fraction of thin films made by HiPIMS were larger than the fraction of thin films made by DC sputtering.

• Progress in Superconductivity and Cryogenics
• /
• v.14 no.1
• /
• pp.1-3
• /
• 2012

LMO($LaMnO_3$) buffer layer of superconducting coated conductor was deposited on IBAD-MgO template in the plasma atmosphere at $650^{\circ}C$ which is relatively low compared with conventional deposition temperature of more than $800^{\circ}C$. Deposition method of LMO was DC sputtering, and target and deposition chamber were connected to the cathode and anode respectively. When DC voltage was applied between target and chamber, plasma was formed on the surface of target. The tape substrate was located with the distance of 10 cm between target and tape substrate. When anode bias was connected to the tape substrate, electrons were attracted from plasma in target surface to the tape substrate, and only tape substrate was heated by electron bombardment without heating any other zone. The effect of electron bombardment on the surface of substrate was investigated by increasing bias voltage to the substrate. We found out that the sample of electron bombardment had the effect of surface heating and had good texturing at low controlling temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.240-241
• /
• 2007

In general, high temperature superconducting coated conductors have intermediary buffers layer consisting of seed, diffusion barrier and cap layers. Simplification of the oxide materials buffer architecture in the fabrication of high temperature superconducting coated conductors is required because the deposition of multi-layers buffer architecture leads to a longer manufacturing time and a higher cost process of coated conductors. Thus, single buffer layer deposition seems to be important for practical coated conductor manufacturing process. In this study, a single gradient layered buffer deposition process of YZO for low cost coated conductors has been tried using DC reactive sputtering technique. About several thick YZO gradient single buffer layers deposited by DC co-sputtering process were found to act as a diffusion layer.

• Korean Journal of Metals and Materials
• /
• v.47 no.6
• /
• pp.378-382
• /
• 2009

We investigated the effects of deposition conditions on the fabrication of $Fe_{3}O_{4}$ thin films using a reactive DC magnetron sputtering at room temperature. The structural, electrical, and magnetic properties of Fe oxide films dependence on the film thickness, oxygen flow rate, and the substrate crystallinity were also studied. We have successfully fabricated $Fe_{3}O_{4}$ film with thickness of about 10 nm under optimal reactive sputtering conditions. The saturation magnetization, resistivity, and Verwey transition of the $Fe_{3}O_{4}$ film were298 emu/cc, $4.0{\times}10^{-2}{\Omega}cm$, and 125 K, respectively.

• Transactions of the Korean hydrogen and new energy society
• /
• v.10 no.4
• /
• pp.211-217
• /
• 1999

In order to investigate the possibilities of microbatteries using TiNi type metal hydride, TiNi films were prepared by DC magnetron sputtering. The films were deposited under various Ar flow rates, DC powers and target-to-substrate distances to find the optimum sputtering conditions. The deposition rate of TiNi thin film increased by increasing the DC power and by decreasing the Ar flow rate and target-to-substrate distance. The chemical composition of the film changed as a target-to-substrate distance. The crystal structure of the film was amorphous state just after deposition and changed to crystalline by vacuum heat treatment.