Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Phase identification of $C_3N_4$ in CN films prepared by rf plasma chemical vapor deposition and dc magnetron sputtering

  • Fu, Dejun (Accelerator Laboratory, Department of Physics, Wuhan University) ;
  • Wu, Dawei (Accelerator Laboratory, Department of Physics, Wuhan University) ;
  • Zhang, Zhihong (Accelerator Laboratory, Department of Physics, Wuhan University) ;
  • Meng, Xianquan (Accelerator Laboratory, Department of Physics, Wuhan University) ;
  • He, Mengbing (Accelerator Laboratory, Department of Physics, Wuhan University) ;
  • Guo, Huaixi (Accelerator Laboratory, Department of Physics, Wuhan University) ;
  • Peng, Yougui (Accelerator Laboratory, Department of Physics, Wuhan University) ;
  • Fan, Xiangjun (Accelerator Laboratory, Department of Physics, Wuhan University)
  • Published : 1998.07.01
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Abstract

We prepared $C_3N_4$ films by rf plasma enhanced chemical vapor deposition(PCVD) and alternating $C_3N_4$/TiN composite films by dc magnetron sputtering. X-ray diffraction (XRD) and transmission electron diffraction (TED) revealed that the structure of the films is amorphous or polycrystalline, depending on deposition conditions and heat treatment. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy confirmed the presence of $sp_3\; and sp _2$ hybridized C atoms bonded with N atoms in the tetrahedral and hexagonal configurations, respectively. Graphite-free $C_3N_4$ films were obtained by PCVD under optimal conditions. To prepare well crystallized $C_3N_4$ films by magnetron sputtering, we introduced negatively biased gratings in the sputtering system. CN films deposited at grating voltages (Vg) lower than 400V are amorphous. Crystallites of cubic and $\beta$-$C_3N_4$ were formed at increased voltages.

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