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Deposition of Al Doped ZnO Films Using ICP-assisted Sputtering on the Plastic Substrate  

Jung, Seung-Jae (School of Materials Science and Engineering, Seoul National University)
Han, Young-Hun (School of Materials Science and Engineering, Seoul National University)
Lee, Jung-Joong (School of Materials Science and Engineering, Seoul National University)
Publication Information
Journal of the Korean institute of surface engineering / v.39, no.3, 2006 , pp. 98-104 More about this Journal
Abstract
Al-doped ZnO (AZO) films were deposited on the plastic substrate by inductively coupled plasma (ICP) assisted DC magnetron sputtering. The AZO films were produced by sputtering a metallic target (Zn/Al) in a mixture of argon and oxygen gases. AZO films with an electrical resistivity of ${\sim}10^3\;{\Omega}cm$ and an optical transmittance of 80% were obtained even at a low deposition temperature. In-situ process control methods were used to obtain stable deposition conditions in the transition region without any hysteresis effect. The target voltage was controlled either at a constant DC power. It was found that the ratio of the zinc to oxygen emission intensity, I (O 777)/I (Zn 481) decreased with increasing the target voltage in the transition region. The $Ar/O_2$ plasma treatment improve the adhesion strength between the polycarbonate substrate and AZO films.
Keywords
Al-doped ZnO (AZO); Inductively coupled plasma (ICP); Reactive sputtering; Target voltage control; Plastic substrate;
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