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Fabrication of Fe3O4 Thin Film using Reactive DC Magnetron Sputtering  

Jung, Minkyung (Department of Mater. Sci. and Eng., Korea University)
Park, Sungmin (Department of Mater. Sci. and Eng., Korea University)
Park, Daewon (Department of Mater. Sci. and Eng., Korea University)
Lee, Seong-Rae (Department of Mater. Sci. and Eng., Korea University)
Publication Information
Korean Journal of Metals and Materials / v.47, no.6, 2009 , pp. 378-382 More about this Journal
Abstract
We investigated the effects of deposition conditions on the fabrication of $Fe_{3}O_{4}$ thin films using a reactive DC magnetron sputtering at room temperature. The structural, electrical, and magnetic properties of Fe oxide films dependence on the film thickness, oxygen flow rate, and the substrate crystallinity were also studied. We have successfully fabricated $Fe_{3}O_{4}$ film with thickness of about 10 nm under optimal reactive sputtering conditions. The saturation magnetization, resistivity, and Verwey transition of the $Fe_{3}O_{4}$ film were298 emu/cc, $4.0{\times}10^{-2}{\Omega}cm$, and 125 K, respectively.
Keywords
$Fe_{3}O_{4}$ film; half metallic reactive sputtering;
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