Gradient YZO Buffer Deposition on RABiTS for Coated Conductor

  • Kim, T.H. (Kyungpook national university) ;
  • Kim, H.S. (Korea Electrotechnology Research Institute) ;
  • Ko, R.K. (Korea Electrotechnology Research Institute) ;
  • Song, K.J. (Korea Electrotechnology Research Institute) ;
  • Lee, N.J. (Korea Electrotechnology Research Institute) ;
  • Ha, D.W. (Korea Electrotechnology Research Institute) ;
  • Ha, H.S. (Korea Electrotechnology Research Institute) ;
  • Oh, S.S. (Korea Electrotechnology Research Institute) ;
  • Pa, K.C. (Kyungpook national university)
  • Published : 2007.06.21

Abstract

In general, high temperature superconducting coated conductors have intermediary buffers layer consisting of seed, diffusion barrier and cap layers. Simplification of the oxide materials buffer architecture in the fabrication of high temperature superconducting coated conductors is required because the deposition of multi-layers buffer architecture leads to a longer manufacturing time and a higher cost process of coated conductors. Thus, single buffer layer deposition seems to be important for practical coated conductor manufacturing process. In this study, a single gradient layered buffer deposition process of YZO for low cost coated conductors has been tried using DC reactive sputtering technique. About several thick YZO gradient single buffer layers deposited by DC co-sputtering process were found to act as a diffusion layer.

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