• Journal of Electrical Engineering and Technology
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• v.2 no.4
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.3
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• pp.143-148
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• 2009

We have fabricated Ti metal films on Cu wire substrates by using a RF magnetron sputtering method at different RF powers (0, 30 and 60 W) in a high vacuum, and we have investigated the thin film characteristics and resistivity. The ion bombardment effect is increased by the method to superimpose RF power to DC power applied to two poles of the base; thus, the thin film is deposited at sputtering gas pressures below 1 Pa. Moreover, the thin film formation of the multilayer structure becomes possible by gradually injecting the RF power, and the thin film quality is improved.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.1-4
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• 2019

Reactive sputtering is widely used because of its high deposition rate and high step coverage. The deposition layer is often affected by target poisoning because the target conditions are changed, as well, by reactive gases during the initial stage of sputtering process. The reactive gas affects the deposition rate and process stability (target poisoning), and it also leads unintended oxide interlayer formation. Although the target poisoning mechanism has been well known, little attention has been paid on understanding the interlayer formation during the reactive sputtering. In this research, we studied the interlayer formation during the reactive sputtering. A DC magnetron sputtering process is carried out to deposit an aluminum oxide film on a silicon wafer. From the real-time process monitoring and material analysis, the target poisoning phenomena changes the reactive gas balance at the initial stage, and affects the interlayer formation during the reactive sputtering process.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.235-236
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• 2014

인듐 주석 산화물 박막을 In/Sn (2, 5 wt.%) 합금 타겟을 사용하여 DC 마그네트론 반응성 스퍼터링법을 이용하여 증착하였다. 기판온도는 상온에서 증착하였으며, 증착 중 DC 파워는 70W부터 120W 까지 10W 단위로 증가시켜 증착하였다. 증착 된 박막을 대기중에서 후 열처리를 각 6, 12 시간 진행하여 전기적 특성을 평가하였으며 평가 장비는 Hall-effect measurements system을 사용하였다. ITO (Indium Tin Oxide) 박막의 비저항은 합금의 Sn 조성별로 다르게 나타났다. Sn 5wt.% 타겟을 이용한 경우에는 DC 파워 90W를 기준으로 더 낮은 파워에서는 열처리에 따라 비저항이 증가하였고, 더 높은 파워에서는 열처리를 한 경우 비저항이 더 낮게 나타났다. 이러한 결과가 나온 이유는, DC 파워가 높은 경우 스퍼터링 공정 중 발생하는 고 에너지 입자 충돌에 의해 산소가 re-sputtering되어 산소가 부족한 박막이 형성되기 때문인 것으로 판단된다. Sn 2 wt.% 타겟의 경우에는 큰 차이를 나타내지 않았으며, 이러한 원인은 Sn 함량이 적기 때문에 산소 공급으로 인해 결정성이 향상되더라도 활성화 Sn의 양이 적기 때문에 나타나는 현상으로 판단된다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.3
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• pp.473-478
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• 2006

High quality indium tin oxide (ITO) thin films have been prepared by DC magnetron sputtering technique. By controlling the deposition parameters such as substrate temperature and oxygen flow rate, we were able to minimize the negative ion damage during the deposition. Films pr데ared under such conditions were found to posses an excel]ent electrical resistivity of $1.6\times10^{-4}{\Omega}cm$ and also found to have a optical transmission above 90%. We also observe that, increasing the oxygen now rate above 4 sccm leads to an increase in electrical resistivity of the films while the transmission was found to saturate with the increase in the oxygen gas flow.

• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.342-349
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• 2019

Titanium nitride(TiN) thin films have been deposited on PEN(Polyethylene naphthalate) substrate by reactive RF(13.56 MHz) magnetron sputtering in a 25% N₂/Ar mixed gas atmosphere. The pulsed DC bias voltage of -50V on substrates was applied with a frequency of 350 kHz, and duty ratio of 40%(1.1 ㎲). The effects of pulsed DC substrate bias voltage on the crystallinity, color, electrical properties of TiN_x films have been investigated using XRD, SEM, XPS and measurement of the electrical properties such as electrical conductivity, carrier concentration, mobility. The deposition rates of TiN_x films was decreased with application of the pulsed DC substrate bias voltage. The TiN_x films deposited without and with pulsed bias of -50V to substrate exhibits gray and gold colors, respectively. XPS depth profiling revealed that the introduction of the substrate bias voltage resulted in decreasing oxygen concentration in TiN_x films, and increasing the electrical conductivities, carrier concentration, and mobility to about 10 times, 5 times, and 2 times degree, respectively.

• Journal of the Korean institute of surface engineering
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• v.45 no.3
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• pp.117-122
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• 2012

ZTO/GZO double layered films were prepared on unheated non-alkali glass substrates. ZTO films were deposited by RF/DC hybrid magnetron co-sputtering using ZnO (RF) target and $SnO_2$ (DC) targets, and then GZO films were deposited by DC magnetron sputtering using an GZO ($Ga_2O_3$:5.57 wt%) target. These films were post-annealed at temperature of 200, $300^{\circ}C$ in air and vacuum ambient for 30 min. In the case of post-annealing in air, ZTO/GZO double layer showed relatively low resistivity change, compared to GZO single layer. Furthermore, ZTO/GZO double layer revealed low WVTR, compared to GZO single layer. Therefore, it can be confirmed that ZTO film doing a role with barrier for water or oxygen diffusion.

• Korean Chemical Engineering Research
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• v.49 no.2
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• pp.195-199
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• 2011

Mo thin films were deposited on soda lime glass at room temperature by using DC magnetron sputtering The electrical and structural properties of the films were investigated by varying DC power and gas pressure as the deposition parameter. As DC power increased, the deposition rate of Mo films was increased and the electrical resistivity was decreased. It was observable that the crystallinity of the films was improved with increasing DC power. As gas pressure decreased, the deposition rate and resistivity of the films were decreased, and long rectangular grains were densely formed. With increasing gas pressure, the grains were transformed to a round shape and the voids on the film surface were increased. It was confirmed that the electrical resistivity of Mo films was increased as the amount of oxygen combined with Mo atoms increased. It was also disclosed that the films have low resistivity as the degree of coupling of oxygen with Mo was reduced due to the enhancement of the crystallinity of the films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.278-282
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• 2004

The Hydrogenated amorphous carbon(a-C:H) thin films are deposited on silicon with a close field unbalanced magnetron(CFUBM) sputtering systems. The experimental data are obtained on the depositon rate and physical properties of a-C:H films using DC bias voltage and Ar/C$_2$H$_2$ pressure. The depostion rate and the surface roughness decrease with DC bias voltage, but the hardness of the thin films increases with DC bias voltage. And the position of G-peak moves to lower wavenumber indicating an increase in diamond-like carbon characteristics with the lower Ar/C$_2$H$_2$ pressure.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.258-260
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• 1993

Aluminum thin films were deposited on glass substrate using DC Magnetron Sputtering. Deposition rate, specular reflectance, and resistivity were investigated as a function of the input power, pressure, substrate temperature, and deposition time. Reflectance was reduced with increasing power, also with prolonging deposition time. Topography of the surface, which influences the properties such as electromigration, was observed from scanning electron microscope (SEM) and there was a close relation between the topography and measured reflectance.