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A Study on the Characteristics of Ti Films Deposited by a DC Magnetron Sputtering Assisted with RF Voltage  

Bae, Chang-Hwan (Dept. of Mechatronics Eng., Graduate School of M. T. &M., Hosea University)
Lee, Ju-Hee (Dept. of Mechatronics Eng., Graduate School of M. T. &M., Hosea University)
Han, Chang-Suk (Dept. of Defense Science & Technology, Hosea University)
Publication Information
Journal of the Korean Society for Heat Treatment / v.22, no.3, 2009 , pp. 143-148 More about this Journal
Abstract
We have fabricated Ti metal films on Cu wire substrates by using a RF magnetron sputtering method at different RF powers (0, 30 and 60 W) in a high vacuum, and we have investigated the thin film characteristics and resistivity. The ion bombardment effect is increased by the method to superimpose RF power to DC power applied to two poles of the base; thus, the thin film is deposited at sputtering gas pressures below 1 Pa. Moreover, the thin film formation of the multilayer structure becomes possible by gradually injecting the RF power, and the thin film quality is improved.
Keywords
RF magnetron sputtering; thin film; low pressure sputtering; ion bombardment effect;
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