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A Study on the Properties of Indium-Tin-Oxide(ITO) Films Deposited by DC magnetron sputtering method  

An, Myung-Hwan (전남대학교 정보소재공학과)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.10, no.3, 2006 , pp. 473-478 More about this Journal
Abstract
High quality indium tin oxide (ITO) thin films have been prepared by DC magnetron sputtering technique. By controlling the deposition parameters such as substrate temperature and oxygen flow rate, we were able to minimize the negative ion damage during the deposition. Films pr데ared under such conditions were found to posses an excel]ent electrical resistivity of $1.6\times10^{-4}{\Omega}cm$ and also found to have a optical transmission above 90%. We also observe that, increasing the oxygen now rate above 4 sccm leads to an increase in electrical resistivity of the films while the transmission was found to saturate with the increase in the oxygen gas flow.
Keywords
ITO;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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