• Corrosion Science and Technology
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• v.22 no.1
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• pp.30-35
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• 2023

Hafnium nitride (HfN) thin films were fabricated by mid-frequency magnetron sputtering (mfMS) and direct current magnetron sputtering (dcMS) and their mechanical and structural properties were compared. In particular, changes in the HfN film properties were observed by changing the pulse frequency of mfMS between 5 kHz, 15 kHz, and 30 kHz. The crystalline structure, microstructure, 3D morphology, and mechanical properties of the HfN films were compared by x-ray diffraction, field-emission scanning electron microscopy, atomic force microscopy, and nanoindentation tester, respectively. HfN film deposited by mfMS showed a smoother and denser microstructure as the frequency increased, whereas the film deposited by dcMS showed a rough and sloppy microstructure. A single δ-HfN phase was observed in the HfN film made by mfMS with a pulse frequency of 30 kHz, but mixed δ-HfN and HfN_0·4 phases were observed in the HfN film made by dcMS. The mechanical properties of HfN film made by mfMS were improved compared to film made by dcMS.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.7
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• pp.326-331
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• 2005

We obtain analytical expressions the magnetic field of ferrites for DC magnetron sputtering device, which has been widely used for vacuum thin film deposition, and suggested the equation on maximum radius of the magnetic field by analytic solution. Also, the analytic results are compared with some calculations using magnetization elements of right-angled hexahedron.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.332-333
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• 2008

DC magnetron sputtering was used to deposit p-type polycrystalline silicon on n-type Si(100) wafer. The influence of film microstructure properties on deposition parameters (DC power, substrate temperature, pressure) was investigated. The substrate temperature and pressure have the important influence on depositing the poly-Si thin films. Smooth ploy-Si films were obtained in (331) orientation and the average grain sizes are ranged in 25-30nm. The grain sizes of films deposited at low pressure of 10mTorr are a little larger than those deposited at high pressure of 15mTorr.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.95-98
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• 2003

Tin doped indium oxide(ITO) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and deposition time on the electrical, optical and morphological properties were investigated experimentally. ITO films with the optimum growth conditions showed resistivity of $2.36{\times}10^{-4}(\Omega}-cm$ and transmittance of 86.28% for a film 680nm thick in the wavelength range of the visible spectrum.

• Journal of the Korean institute of surface engineering
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• v.41 no.5
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• pp.214-219
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• 2008

Indium tin oxide (ITO) films were deposited on PET substrate by RF superimposed DC magnetron sputtering using ITO (doped with 10 wt% $SnO_2$) target. Substrate temperature was maintained below $750^{\circ}C$ without intentionally substrate heating during the deposition. The discharge voltage of DC power supply was decreased from 280 V to 100 V when superimposed RF power was increased from 0 W to 150 W. The electrical properties of the ITO films were improved with increasing of superimposed RF power. In the result of cyclic bending test, relatively high mechanical property was obtained for the ITO film deposited with RF power of 75 W under DC current of 0.75 A which could be attributed to the decrease of internal stress caused by decrease in both deposition rate and plasma impedance.

• Journal of the Korean institute of surface engineering
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• v.47 no.4
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• pp.168-173
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• 2014

The paper presents the comparative results of TiAlN coatings deposited by DC and pulsed DC asymmetric bipolar magnetron sputtering systems. The results show that, with the decreasing duty cycle and increasing pulse frequency, the coating morphology changes from a columnar to a dense structure, with finer grains. Pulsed sputtered TiAlN coatings showed higher hardness, higher residual stress, and smaller grain sizes than dc prepared TiAlN coatings. Moreover residual stress of pulsed sputtered TiAlN coatings increased on increasing pulse frequency. Meanwhile, the surface roughness decreased continuously with increasing pulsed DC frequency up to 50 kHz.

• Journal of the Korean institute of surface engineering
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• v.48 no.4
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• pp.136-141
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• 2015

The paper presents the comparative results of NbN coatings deposited by DC and pulsed DC asymmetric bipolar magnetron sputtering systems. The results show that, with the decreasing duty cycle and increasing pulse frequency, the coating morphology changes from a columnar to a dense structure, with finer grains. The Pulsed sputtered NbN coatings showed higher hardness, higher residual stress, and smaller grain sizes than those of DC prepared NbN coatings. Moreover residual stress of pulsed sputtered NbN coatings increased on increasing pulse frequency. Meanwhile, the surface roughness decreased continuously with increasing pulsed DC frequency up to 50 kHz.

• Applied Science and Convergence Technology
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• v.27 no.1
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• pp.19-22
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• 2018

The ion energy and angle distributions (IEADs) in the DC magnetron sputtering systems are investigated for the variation of gas pressure using particle-in-cell simulation. Even for the condition of collisionless ion sheath at low pressure, it is possible to change the IEAD significantly with the change of gas pressure. The bombarding ions to the target with low energy and large incident angle are observed at low pressure when the sheath voltage drop is low. It is because the electron transport is hindered by the magnetic field at low pressure because of few collisions per electron gyromotion while the ions are not magnetized. Therefore, the space charge effect is the most dominant factor for the determination of IEADs in low-pressure magnetron sputtering discharges.

• Applied Science and Convergence Technology
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• v.27 no.2
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• pp.26-29
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• 2018

The ion energy and angle distributions (IEADs) in the DC magnetron sputtering systems are investigated for the variation of gas pressure using particle-in-cell simulation. Even for the condition of collisionless ion sheath at low pressure, it is possible to change the IEAD significantly with the change of gas pressure. The bombarding ions to the target with low energy and large incident angle are observed at low pressure when the sheath voltage drop is low. It is because the electron transport is hindered by the magnetic field at low pressure because of few collisions per electron gyromotion while the ions are not magnetized. Therefore, the space charge effect is the most dominant factor for the determination of IEADs in low-pressure magnetron sputtering discharges.

• Korean Journal of Materials Research
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• v.9 no.7
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• pp.688-694
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• 1999

Ti-6Al-4V-N films have been grown onto glass substrates by dc reactive magnetron sputtering from a Ti-6Al-4V-N alloy target at different nitrogen partial pressure, input powers and sputtering times. The influence of various sputtering conditions on structural properties of Ti-6Al-4V-N films was investigated by measuring their X-ray diffraction. The quaternary Ti-6Al-4V-N film is crystallizing in a face centered cubic TiN structure, the lattice parameter is smaller than the TiN parameter as titanium atoms of the TiN lattice are replaced by aluminum and vanadium atoms. The films show the (111) preferred orientation and the (111) peak intensity decreases as the nitrogen partial pressure is increased, but the intensity increases as the sputtering time is increased. The deposition rate and the grain size are alto related with the variation of various sputtering conditions.