Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.05c
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- Pages.95-98
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- 2003
Properties of ITO Transparent Conducting Film by DC Magnetron Sputtering Method
DC 마그네트론 스퍼터법에 의한 ITO 투명전도막 특성
- Park, Kang-Il (Kyungsung Uni) ;
- Kim, Byung-Sub (Kyungsung Uni) ;
- Lim, Dong-Gun (Kyungsung Uni) ;
- Park, Gi-Yub (Busan Info-Tech College) ;
- Kwak, Dong-Joo (Kyungsung Uni)
- Published : 2003.05.16
Abstract
Tin doped indium oxide(ITO) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and deposition time on the electrical, optical and morphological properties were investigated experimentally. ITO films with the optimum growth conditions showed resistivity of