• Korean Chemical Engineering Research
• /
• v.49 no.4
• /
• pp.432-437
• /
• 2011

Recently, industry needs a new design of Czochralski(Cz) process for higher productivity with reasonable energy consumption. In this study, we carried out computational simulations for finding out a new optimal design of Cz process with variables which can be applied in real industry such as location of heater, shape of shield and crucible size. Objective process was Cz process which can be produced 8 inch diameter Si ingot for solar cell and we acquired an optimal design for higher productivity, low power consumption with stable production condition. For higher productivity we also change the crucible diameter from 22 inches to 24 inches with changing insulation thickness only because the process housing size could not be changed in industry.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.25 no.7
• /
• pp.767-773
• /
• 1988

We have proposed a new simple and easy method for the observation of OSF growth and shrinkage. This method is to observe the behavior of OSF in thedamaged region during oxidation as well as annealing process after introducing mechanical damage on the silicon surface by pressure-controllable indentor. The effect of SiO2 layer on the shrinkage of pregrown OSF generated by the proposed method has been investigated using the samples with or without SiO2 layer. From the experimental data, we suggest a model for the shrinkage of OSF, which is based on the recombinaiton mechanism between silicon interstitial and vacancy at the Si-SiO2 interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.985-988
• /
• 2004

The carrier lifetime of boron doped Cz silicon samples after light induced degradation could be improved by optimized rapid thermal processing (RTP). The important five different parameters varied in order to investigate which parameter is important for the stable lifetime after light induced degradation, $\tau_d$. The Plateau temperature and the Plateau time influenced on the lifetime after light induced degradation. Especially, the Plateau temperature showed a strong influence on the stable lifetime. The optimal plateau temperature is approximately $900^{\circ}C$ t for a plateau time of 120 s. The stable lifetime increased from $15\mu}s$ to $25.5{\mu}s$. The normalized defect concentration, $N_t^*$, decreased from $0.06{\mu}s^{-1}$ to $0.037{\mu}s^{-1}$ by RTP-process.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.1
• /
• pp.42-47
• /
• 2000

The surface structure and the crystalline features in the near surface region have been investigated for CZ(Czochralski) grown Si wafers. Si wafers were annealed by RTA (Rapid Thermal Annealing) method in H$_2$ambient after mirror polished process. The densities of COPs (Crystal Originated Particles) after RTA process were remarkably decreased at the surface and in the region of 5um depth from the surface as well. terrace type surface structure which was formed by etching and re-arrangement of Si atoms during $H_2$annealing process also has been observed.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1998.06a
• /
• pp.45-48
• /
• 1998

For the single crystal growth of silicon, a global analysis of heat transfer in a CZ furnace was carried out using the finite element method, where the radiative heat transfer between the surfaces that possess both specular and/or diffuse reflectance components was taken into account, and then the effect of the specular reflection of the crystal and/or melt on the CZ crystal growth was numerically investigated.

• Korean Journal of Crystallography
• /
• v.11 no.4
• /
• pp.200-206
• /
• 2000

In a 200 mm Cz-Si crystal, a macroscopic fluctuation in pulling rate was intentionally introduced then the variations of the pulling rate and the formation behaviors of grow-in defects were compared. The diameters of the OSF-ring and the FPD area were affected by the fluctuation in the region above 1100℃. The COP density depended on the diameter of the OSF-ring. ΔOi and BMD were affected by the fluctuation in the region near 1000Δ. As the result, when a macroscopic fluctuation in pulling rate is introduced, the quality of crystal in the region of 150 mm from the growth interface should be reviewed carefully because it can be affected by the fluctuation.

• Korean Journal of Crystallography
• /
• v.11 no.3
• /
• pp.157-161
• /
• 2000

In a 200nm Cz-Si crystal, a macroscopic fluctuation in pulling rate was intentionally introduced an then the variations of the pulling rate and the position of OSF-ring were compared each other. The formation behavior of OSF-ring in the effective volume, defined as the region between the growth interface position -α and the growth interface position +α, is most affected by the pulling rate fluctuation. To understand the correct effect of a macroscopic pulling rate fluctuation, its cumulative effect in the effective volume should be considered. A new concept of modeling for it was proposed here.

• Proceedings of the Korea Crystallographic Association Conference
• /
• 2001.05a
• /
• pp.27-27
• /
• 2001

• Proceedings of the Korean Vacuum Society Conference
• /
• 1996.02a
• /
• pp.177-177
• /
• 1996

• Journal of the Korean Vacuum Society
• /
• v.20 no.5
• /
• pp.367-373
• /
• 2011

It is described that the proton beam induces micro defects and electronic deep levels in Cz single crystal silicon. Enhance signal-to-noise ratio, Coincidence Doppler Broadening Positron Annihilation Spectroscopy has been applied to study of characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The samples were exposed by 4.0 MeV proton beams ranging from 0 to ${\sim}10^{14}$ ptls. The S-parameter values were increased as increasing the irradiated proton beam, that indicated the defects generate more.