Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Investigation of the Carrier Lifetime of Cz-Si after Light Induced Degradation

빛에 의한 Cz 실리콘 기판의 carrier lifetime 감소에 대한 연구

  • Lee, Ji-Youn (Photovoltaics R&D Center, Sungjin Semitech Co.) ;
  • Lee, Soo-Hong (Strategic Research Energy Center, Dept. of Electronics Engineering, Sejong University)
  • 이지연 (성진세미텍 (주) 태양전지 연구 개발 센터) ;
  • 이수홍 (세종대학교 전략에너지 연구소)
  • Published : 2004.07.05
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Abstract

The carrier lifetime of boron doped Cz silicon samples after light induced degradation could be improved by optimized rapid thermal processing (RTP). The important five different parameters varied in order to investigate which parameter is important for the stable lifetime after light induced degradation, $\tau_d$. The Plateau temperature and the Plateau time influenced on the lifetime after light induced degradation. Especially, the Plateau temperature showed a strong influence on the stable lifetime. The optimal plateau temperature is approximately $900^{\circ}C$ t for a plateau time of 120 s. The stable lifetime increased from $15\mu}s$ to $25.5{\mu}s$. The normalized defect concentration, $N_t^*$, decreased from $0.06{\mu}s^{-1}$ to $0.037{\mu}s^{-1}$ by RTP-process.

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