Korean Journal of Crystallography (한국결정학회지)
- Volume 11 Issue 3
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- Pages.157-161
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- 2000
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- 1229-8700(pISSN)
Effect of a Macroscopic Fluctuation in Pulling Rate on the Formation of OSF-ring Cz-Si SIngle Crystal
초크랄스키 실리콘 단결정에서 인상 속도의 거시적 변동이 OSF-링 형성에 미치는 영향
- Park, Bong-Mo (LG Siltron Inc) ;
- Seo, Gyeong-Ho (LG Siltron Inc) ;
- Kim, Gun (LG Siltron Inc)
- Published : 2000.09.01
Abstract
In a 200nm Cz-Si crystal, a macroscopic fluctuation in pulling rate was intentionally introduced an then the variations of the pulling rate and the position of OSF-ring were compared each other. The formation behavior of OSF-ring in the effective volume, defined as the region between the growth interface position -α and the growth interface position +α, is most affected by the pulling rate fluctuation. To understand the correct effect of a macroscopic pulling rate fluctuation, its cumulative effect in the effective volume should be considered. A new concept of modeling for it was proposed here.
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