A Study on the Nucleation, Growth and Shrinkage of Oxidation Induced Stacking Faults (OSF) -Part2: Role of $SiO_2$ Layer on the Shrinkage of Oxidation Induced Stacking Faults (OSF) in P-type CZ Silicon

산화 적층 결합의 생성, 성장 및 소멸에 관한 연구-제2부 : P형 CZ 실리콘에서 산화 적층 결함의 소멸에 미치는 $SiO_2$층의 역학

We have proposed a new simple and easy method for the observation of OSF growth and shrinkage. This method is to observe the behavior of OSF in thedamaged region during oxidation as well as annealing process after introducing mechanical damage on the silicon surface by pressure-controllable indentor. The effect of SiO2 layer on the shrinkage of pregrown OSF generated by the proposed method has been investigated using the samples with or without SiO2 layer. From the experimental data, we suggest a model for the shrinkage of OSF, which is based on the recombinaiton mechanism between silicon interstitial and vacancy at the Si-SiO2 interface.