• 제목/요약/키워드: Current control device

검색결과 730건 처리시간 0.031초

풍력발전의 전력공급 안정화를 위한 ESS 보조제어 기법과 경제적 용량 산정 연구 (A Study of Economic ESS Utilization Based on Supplement Control Plan for Stable Wind Energy Extraction)

  • 정승민
    • 전기학회논문지
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    • 제67권1호
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    • pp.22-28
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    • 2018
  • In case of developing a combined system by a number of distributed resources with storage device, a number of application suggests a huge capacity can derive operational flexibility both power supply issues or when unexpected situation imposed. However, it is important to determine a resonable energy capacity because the device have many controversial cost issues in current power system industry. An ESS application which focusing essentially required points can induce appropriate storage capacity that required in economic operation. In this paper, a curtailment supporting algorithm based on storage device is introduced, and applied in the capacity calculation method. The main algorithm pursues handling minor exceeding quantities which can cause mechanical load at blade; This paper tries to include it for configuring hybrid algorithm with pitch control. Several fluctuating conditions are utilized in simulation to reflect critical situation. The analyzing process focuses on the control feasibility with applied capacity and control method.

금속 부품 열처리업체의 최대전력절감장치 동작 특성 및 효과 분석 (Performence Characteristics and Analysis Effect of Maximum Power Saving Device in Metal Parts Heat Treatment Company)

  • 장홍순;한영섭;황익환;서상현
    • 조명전기설비학회논문지
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    • 제28권6호
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    • pp.40-44
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    • 2014
  • In this paper, maximum power is the lowering device using the facility's energy use and peak load electricity through analyzing attitude should like to make it reduce its power base rate. Simulator to manage the demand for power, a maximum electric power base power from electronic watt-hour meters by a device's signal, predictive power, the current power by computing the goal of power for less than Maximum peak power and peak shift, so that you can manage, and peak York, which role you want a cut Metal heat treatment result which analyzes the data, demand for electricity company over the years of analyzing the characteristics of each load, and effects and Reducing power consumption device every month identified seven Sequence control to the load system and successful power control is about showing that the defined goals.

나노미터 MOSFET비휘발성 메모리 소자 구조의 탐색 (Feasibility Study of Non-volatile Memory Device Structure for Nanometer MOSFET)

  • 정주영
    • 반도체디스플레이기술학회지
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    • 제14권2호
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    • pp.41-45
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    • 2015
  • From 20nm technology node, the finFET has become standard device for ULSI's. However, the finFET process made stacking gate non-volatile memory obsolete. Some reported capacitor-less DRAM structure by utilizing the FBE. We present possible non-volatile memory device structure similar to the dual gate MOSFET. One of the gates is left floating. Since body of the finFET is only 40nm thick, control gate bias can make electron tunneling through the floating gate oxide which sits across the body. For programming, gate is biased to accumulation mode with few volts. Simulation results show that the programming electron current flows at the interface between floating gate oxide and the body. It also shows that the magnitude of the programming current can be easily controlled by the drain voltage. Injected electrons at the floating gate act similar to the body bias which changes the threshold voltage of the device.

PBLG의 유전특성에 관한 연구 (A Study on the Dielectric Property of PBLG)

  • 김병근;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.428-431
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    • 2002
  • Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. The structure of MIM(Metal-Insulator-Metal) device is Cr-Au/ PBLG/ Al. the number of accumulated layers are 1, 3, 5, 7, 9. The I-V characteristic of the device is measured from 0[V] to 2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because PBLG system have a accumulated layers the maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

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그림자 영향을 고려한 새로운 태양광 추적시스템 제어 (Control of a Novel PV Tracking System Considering the Shadow Influence)

  • 박기태;최정식;정동화
    • 전기학회논문지
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    • 제57권6호
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    • pp.994-1002
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    • 2008
  • In this paper a novel tracking system is described, regarding the influence of shadow between array, aimed at improving the efficiency of PV tracking system. Comparing with a building site versus capacity power, domestic solar powers have a limited siting. Therefore, each array interferes with the shadow of other arrays. The loss by influence of those shadow can be compensated for by means of control algorithm of the tracking device. The paper suggests a method controlling an altitude for length which is received the shadow influence of PV array. By using an azimuth of current solar position and the length between arrays, the controller of tracking device is able to calculate the length between actual arrays and make a comparison of the shadow length at a specific time with the length between arrays. When the shadow length is longer than the length between arrays, the controller of tracking device can adjust a position by compensating error altitude of the length between arrays at an altitude of current solar position. In the paper, we develop the control algorithm able to minimize the loss caused by the influence of shadow on the PV tracking system, and compared this with conventional output system. The controller has been tested in the laboratory with proposed algorithm and shows excellent performance.

인버터방식의 고전압 발생장치를 이용한 의료용 X선 기기의 특성평가 (Characteristic Evaluation of Medical X-Ray Using High-Voltage Generator with Inverter System)

  • 김영표;천민우;박용필
    • 한국전기전자재료학회논문지
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    • 제24권1호
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    • pp.36-41
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    • 2011
  • Medical X-ray has been brought many changes according to the rapid development of high technology. Especially, for high-voltage generator which is the most important in X-ray generation the traditional way is to use high-voltage electric transformers primarily. However, since it is large and heavy and the ripple rate of DC high-voltage applied to X-ray tube is too big, it has a disadvantage of low X-ray production efficiency. To solve these problems, the studies about high-voltage power supply are now proceeding. At present, the high-voltage generator that generates high-voltage by making high frequency using inverter control circuit consisting of semiconductor device is mainly used. High-voltage generator using inverter has advantages in the diagnosis using X-ray including high performance with short-term use, miniaturization of power supply and ripple reduction. In this study, the X-ray high-voltage device with inverter type using pulse width modulation scheme to the control of tube voltage and tube current was designed and produced. For performance evaluation of produced device, the control signal analysis, irradiation dose change and beam quality depending on the load variation of tube voltage and tube current were evaluated.

IoT 태그 및 소셜 메시지 기반 사물 제어 시스템 (An IoT Tag and Social Message-based Device Control System)

  • 백승민;진연주;하권우;한상욱;정진우
    • 정보과학회 컴퓨팅의 실제 논문지
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    • 제23권9호
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    • pp.550-556
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    • 2017
  • 사물 인터넷 기술의 발달로 인하여 언제 어디서든지 손쉽게 다양한 기기들의 상태를 조회하거나 제어 할 수 있는 환경으로 발전하고 있다. 그러나 현재의 IoT 관련 시스템을 이용하여 사물을 제어하려면 어플리케이션 실행, 공간 및 사물 선택, 사물 제어 등의 여러 단계에 걸친 복잡한 조작이 필요하기 때문에 손쉽고 빠르게 사물을 제어하거나 사물 제어에 대한 요청을 발송하는 부분에 여전히 많은 한계점을 가지고 있다. 본 논문에서는 보다 효율적인 사물 인터넷 제어를 위하여 IoT 태그 및 소셜 메시지 기반의 IoT 제어 프레임워크를 제안한다. 제안하는 시스템에서는 IoT 태깅을 수행한 사용자의 사물 소유권에 따라 사물을 직접 제어하거나 사물 소유주에게 IoT 메시지 전송을 통하여 간편하게 사물을 제어 할 수 있다. 본 논문에서는 프로토타입 구현을 통하여 IoT 환경에서 보다 직관적이고 효율적인 사물 제어가 가능함을 보였다.

결상 시 누전전류 발생과 오동작 방지 기능을 갖는 결상보호기 개발에 관한 연구 (A Study on Development of Open-Phase Protector Having Leakage Current Generation and Incapable Operation Prevention at Open-Phase Accident)

  • 곽동걸
    • 전기학회논문지
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    • 제64권1호
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    • pp.182-187
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    • 2015
  • In the three-phase power system, when any one-phase or two-phases is open-phase, the unbalanced current flows and the single-phase power supplies to three-phase loads. Specially, motor coil and transformer coil receive over-current. As a result, great damage as well as electrical fire can occur to the power system. In order to improve these problems, this paper proposes that an open-phase detection device is designed by a new algorithm using electric potential difference between the resultant voltage of neutral point and ground, and a control circuit topology of open-phase protector is composed of highly efficient semiconductor devices. It improves response speed and reliability. The control algorithm circuit also operates the cut-off of a conventional residual current protective device (RCD) which flows an enforced leakage current to ground wire at open-phase accident. Furthermore, time delay circuit is added to prevent the incapable operation of open-phase protector about instantaneous open-phase not open-phase fault. The time delay circuit improves more reliability.

음극선을 이용한 삼중수소 베타선 모사 (Simulation of Beta Rays from Tritium with Cathode Rays)

  • 김광신;이숙경;손순환;임훈;이동환
    • 방사선산업학회지
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    • 제2권3호
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    • pp.141-148
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    • 2008
  • Beta rays emitted from tritium in titanium tritide film were simulated with cathode rays of a scanning electron microscope to investigate the effect of beta rays from tritium on semiconductor devices. The cathode ray currents, which vary with the change of applied energy and beam spot size, were measured with Faraday cup. The current from the semiconductor device irradiated with cathode rays at various conditions was measured. The cathode ray current increased with the increase of spot size to a maximum then decreased when the spot sized increased further. The magnitude of current produced in the semiconductor device is proportional to the magnitude of cathode ray current. The magnitude of cathode ray current at each energy level was matched to the intensity of beta ray to simulate the tritium beta ray spectrum. Then the semiconductor characteristics were analyzed with I-V curves.

Nanosheet FET와 FinFET의 도핑 농도에 따른 전류-전압 특성 비교 (Comparison of Current-Voltage Characteristics by Doping Concentrations of Nanosheet FET and FinFET)

  • 안은서;유윤섭
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2022년도 추계학술대회
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    • pp.121-122
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    • 2022
  • 본 논문은 Nanosheet FET(NSFET)와 FinFET의 구조를 갖는 소자 성능을 조사하기 위해서 3차원 소자 시뮬레이터를 이용하여 시뮬레이션한 결과를 소개한다. NSFET와 FinFET의 채널 도핑 농도에 따른 전류-전압 특성을 시뮬레이션하였고, 그 전류-전압 특성으로부터 추출한 문턱전압, 문턱전압이하 기울기 등의 성능을 비교하였다. NSFET이 FinFET보다 채널 도핑 농도에 따른 전류-전압 특성에서 드레인 전류가 더 많이 흐르며 더 높은 문턱전압을 갖는다. 문턱전압이하 기울기는 NSFET가 FinFET보다 더 가파른 기울기를 갖는다.

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