A Study on the Dielectric Property of PBLG

PBLG의 유전특성에 관한 연구

  • 김병근 (동신대학교 대학원 전기전자공학과) ;
  • 이경섭 (동신대학교 전기전자정보통신공학부)
  • Published : 2002.11.07

Abstract

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. The structure of MIM(Metal-Insulator-Metal) device is Cr-Au/ PBLG/ Al. the number of accumulated layers are 1, 3, 5, 7, 9. The I-V characteristic of the device is measured from 0[V] to 2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because PBLG system have a accumulated layers the maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

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