Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2002.11a
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- Pages.428-431
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- 2002
A Study on the Dielectric Property of PBLG
PBLG의 유전특성에 관한 연구
- Kim, Beyung-Geun (Dept. of Electrical & Electronic Eng. Dongshin Univ. grad) ;
- Lee, Kyung-Sup (Dept. of Electrical & Electronic Eng. Dongshin Univ)
- Published : 2002.11.07
Abstract
Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. The structure of MIM(Metal-Insulator-Metal) device is Cr-Au/ PBLG/ Al. the number of accumulated layers are 1, 3, 5, 7, 9. The I-V characteristic of the device is measured from 0[V] to 2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because PBLG system have a accumulated layers the maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.