• Title/Summary/Keyword: Cu stress

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Effect of Current Density and Solution pH on Properties of Electrodeposited Cu Thin Films from Sulfate Baths for FCCL Applications (Sulfate 용액을 이용하여 전기도금 한 FCCL용 Cu 필름의 특성에 미치는 전류밀도와 pH의 영향)

  • Shin, Dong-Yul;Park, Doek-Yong;Koo, Bon-Keup
    • Journal of the Korean institute of surface engineering
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    • v.42 no.4
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    • pp.145-151
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    • 2009
  • Nanocrystalline Cu thin films for FCCL were electrodeposited from sulfate baths to investigate systematically the influences of current density, solution pH on current efficiency, residual stress, surface morphology, and microstructure of thin Cu films. Current efficiencies were measured to be approximately 100%, irrespective of the applied current density and solution pH. But these influenced residual stress, surface morphology, XRD pattern, and grain size of electrodeposited Cu thin film. The residual stress decreased with decreasing the surface roughness, but increased with increasing the fcc(111) peak strength of XRD patterns.

Warpage and Stress Simulation of Bonding Process-Induced Deformation for 3D Package Using TSV Technology (TSV 를 이용한 3 차원 적층 패키지의 본딩 공정에 의한 휨 현상 및 응력 해석)

  • Lee, Haeng-Soo;Kim, Kyoung-Ho;Choa, Sung-Hoon
    • Journal of the Korean Society for Precision Engineering
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    • v.29 no.5
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    • pp.563-571
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    • 2012
  • In 3D integration package using TSV technology, bonding is the core technology for stacking and interconnecting the chips or wafers. During bonding process, however, warpage and high stress are introduced, and will lead to the misalignment problem between two chips being bonded and failure of the chips. In this paper, a finite element approach is used to predict the warpages and stresses during the bonding process. In particular, in-plane deformation which directly affects the bonding misalignment is closely analyzed. Three types of bonding technology, which are Sn-Ag solder bonding, Cu-Cu direct bonding and SiO2 direct bonding, are compared. Numerical analysis indicates that warpage and stress are accumulated and become larger for each bonding step. In-plane deformation is much larger than out-of-plane deformation during bonding process. Cu-Cu bonding shows the largest warpage, while SiO2 direct bonding shows the smallest warpage. For stress, Sn-Ag solder bonding shows the largest stress, while Cu-Cu bonding shows the smallest. The stress is mainly concentrated at the interface between the via hole and silicon chip or via hole and bonding area. Misalignment induced during Cu-Cu and Sn-Ag solder bonding is equal to or larger than the size of via diameter, therefore should be reduced by lowering bonding temperature and proper selection of package materials.

High Temperature Compressive Deformation Behavior of the Bulk Metallic Glass Zr-Ti-Cu-Ni-Be Alloy (벌크 비정질 Zr-Ti-Cu-Ni-Be 합금의 고온 압축 변형 특성)

  • 이광석;하태권;안상호;장영원
    • Transactions of Materials Processing
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    • v.10 no.7
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    • pp.565-572
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    • 2001
  • It is well known that a multicomponent $Zr_{4l.2}Ti_{13.8}Cu_{12.5}Ni_{10}Be_{22.5}$ bulk metallic glass alloy shows good bulk glass forming ability due to its high resistance to crystallization in the undercooled liquid state. DSC and XRD have been performed to confirm the amorphous structure of the master alloy. To investigate the mechanical properties and deformation behavior of the bulk metallic $Zr_{4l.2}Ti_{13.8}Cu_{12.5}Ni_{10}Be_{22.5}$ alloy, a series of compression tests has been carried out at the temperatures ranging from $351^{\circ}C$ to $461^{\circ}C$at the various initial strain rates from $2{\times}10^4s^1$ to $2{\times}10^2s^1$. Three types of nominal stress-strain curves have been identified such as linear stress-strain relationship meaning fracture at maximum stress, plastic deformation including stress overshoot and steady-state flow, plastic deformation without stress overshoot depending on the strain rate and test temperature. Also DSC analysis for the compressed specimens was carried out to investigate the change of structure, thermal stability and crystallization behavior for the various test conditions.

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Contact Resistance and Thermal Cycling Reliability of the Flip-Chip Joints Processed with Cu-Sn Mushroom Bumps (Cu-Sn 머쉬룸 범프를 이용한 플립칩 접속부의 접속저항과 열 싸이클링 신뢰성)

  • Lim, Su-Kyum;Choi, Jin-Won;Kim, Young-Ho;Oh, Tae-Sung
    • Korean Journal of Metals and Materials
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    • v.46 no.9
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    • pp.585-592
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    • 2008
  • Flip-chip bonding using Cu-Sn mushroom bumps composed of Cu pillar and Sn cap was accomplished, and the contact resistance and the thermal cycling reliability of the Cu-Sn mushroom bump joints were compared with those of the Sn planar bump joints. With flip-chip process at a same bonding stress, both the Cu-Sn mushroom bump joints and the Sn planar bump joints exhibited an almost identical average contact resistance. With increasing a bonding stress from 32 MPa to 44MPa, the average contact resistances of the Cu-Sn mushroom bump joints and the Sn planar bump joints became reduced from $30m{\Omega}/bump$ to $25m{\Omega}/bump$ due to heavier plastic deformation of the bumps. The Cu-Sn mushroom bump joints exhibited a superior thermal cycling reliability to that of the Sn planar bump joints at a bonding stress of 32 MPa. While the contact resistance characteristics of the Cu-Sn mushroom bump joints were not deteriorated even after 1000 thermal cycles ranging between $-40^{\circ}C$ and $80^{\circ}C$, the contact resistance of the Sn planar bump joints substantially increased with thermal cycling.

Continuous W-Cu functional gradient material from pure W to W-Cu layer prepared by a modified sedimentation method

  • Bangzheng Wei;Rui Zhou;Dang Xu;Ruizhi Chen;Xinxi Yu;Pengqi Chen;Jigui Cheng
    • Nuclear Engineering and Technology
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    • v.54 no.12
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    • pp.4491-4498
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    • 2022
  • The thermal stress between W plasma-facing material (PFM) and Cu heat sink in fusion reactors can be significantly reduced by using a W-Cu functionally graded material (W-Cu FGM) interlayer. However, there is still considerable stress at the joining interface between W and W-Cu FGM in the W/W-Cu FGM/Cu portions. In this work, we fabricate W skeletons with continuous gradients in porosity by a modified sedimentation method. Sintering densification behavior and pore characteristics of the sedimented W skeletons at different sintering temperatures were investigated. After Cu infiltration, the final W-Cu FGM was obtained. The results indicate that the pore size and porosity in the W skeleton decrease gradually with the increase of sintering temperature, but the increase of skeleton sintering temperature does not reduce the gradient range of composition distribution of the final prepared W-Cu FGM. And W-Cu FGM with composition distribution from pure W to W-20.5wt.% Cu layer across the section was successfully obtained. The thickness of the pure W layer is about one-fifth of the whole sample thickness. In addition, the prepared W-Cu FGM has a relative density of 94.5 % and thermal conductivity of 185 W/(m·K). The W-Cu FGM prepared in this work may provide a good solution to alleviate the thermal stress between W PFM and Cu heat sink in the fusion reactors.

FEM Residual Stress Analysis and Mechanical Properties of Silicon Nitride/Stainless Steel Joint with Multi-Interlayer (다층중간재를 사용한 질화규소/스테인레스 강 접합체의 잔류응력 해석 및 기계적 특성)

  • 박상환;김태우;최영화
    • Journal of the Korean Ceramic Society
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    • v.33 no.2
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    • pp.127-134
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    • 1996
  • The thermal residual stresses were estimated for brazed Si3N4/S.S.316 joints with Cu/Mo multi-interlayers using FEM, and their bending strengths at room temperature were measured for various interlayer configura-tions. The Cu, Mo multi-interlayer decreased the maximum residual stress in Si3N4 and caused the residual stress redistribution rsulting in the high residual stress at Mo interlayer. The stress distribution in the joints as well as the maximum residual stress in silicon nitride were found to be main factors for determining bending strengths and Weibull modulous of the joints. The bending strength of the brazed Si3N4/S.S.316 joints with specific Cu, Mo multi-interlayer system were found to be above 400 MPa.

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Proteome analysis of roots of sorghum under copper stress

  • Roy, Swapan Kumar;Cho, Seong-Woo;Kwon, Soo Jeong;Kamal, Abu Hena Mostafa;Lee, Dong-Gi;Sarker, Kabita;Lee, Moon-Soon;Xin, Zhanguo;Woo, Sun-Hee
    • Proceedings of the Korean Society of Crop Science Conference
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    • 2017.06a
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    • pp.130-130
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    • 2017
  • Sorghum bicolor is considered as copper-tolerant species. The present study was conducted to understand the copper tolerance mechanism in Sorghum seedling roots. Morphological and effects of Cu on other interacting ions were observed prominently in the roots when the plants were subjected to different concentrations (0, 50, and $100{\mu}M$) of $CuSO_4$. However, the morphological characteristics were reduced by Cu stress, and the most significant growth inhibition was observed in plants treated with the highest concentration of $Cu^{2+}$ ions ($100{\mu}M$). In the proteome analysis, high-throughput two-dimensional polyacrylamide gel electrophoresis coupled with MALDI-TOF-TOF mass spectrometry was performed to explore the molecular responses of Cu-induced sorghum seedling roots. In two-dimensional silver-stained gels, a total of 422 differentially expressed proteins (${\geq}1.5-fold$) were identified using Progenesis SameSpot software. A total of 21 protein spots (${\geq}1.5-fold$) from Cu-induced sorghum roots were analyzed by mass spectrometry. Of the 21 differentially expressed protein spots from Cu-induced sorghum roots, a total of 10 proteins were up-regulated, and 11 proteins were down-regulated. The abundance of the most identified protein species from the roots that function in stress response and metabolism was significantly enhanced, while protein species involved in transcription and regulation were severely reduced. The results obtained from the present study may provide insights into the tolerance mechanism of seedling roots in Sorghum.

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Evaluation of the Residual Stress with Respect to Supporting Type of Multi-layer Thin Film for the Metallization of Pressure Sensor (압력센서의 배선을 위한 다층 박막의 지지조건 변화에 따른 잔류응력 평가)

  • Shim, Jae-Joon;Han, Geun-Jo;Han, Dong-Seup
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.28 no.5
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    • pp.532-538
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    • 2004
  • MEMS technology applying to the sensors and micro-electro devices is complete system. These microsystems are made by variable processes. Especially, the mentallization process has very important functions to transfer the power operating the sensor and signal induced from sensor part. But in the structures of MEMS the local stress concentration and deformation are often yielded by an irregular geometrical shape and different constraint. Therefore, this paper studies the effect of supporting type and thickness ratio about thin film of the substrate on the residual stress variation when the thermal loads is applied to the multi-layer thin film fabricated by metallization process. Specimens were made from several materials such as Al, Au and Cu. Then, uniform thermal load was applied, repeatedly. The residual stress was measured by FE Analysis and nano-indentation method using AFM. Generally, the specimen made of Al induced the larger residual stress than that of made of other materials. Specimen made of Cu and Au having the low thermal expansion coefficient induces the minimum residual stress. Similarly, the lowest indentation length was measured by nano-indentation method in the Si/Au/Cu specimen. Particularly, clusters are created in the specimen made of Cu by thermal load and the indentation length became increasingly large by cluster formation.

Mechanical Properties of a Cu55Zr30Ti10Pd5 Bulk Amorphous Alloy (Cu55Zr30Ti10Pd5 비정질 합금의 기계적 거동)

  • Choi Won Wook;Gato H.;Kim Hyoung Seop;Hong Sun Ig;Inoue A.
    • Korean Journal of Materials Research
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    • v.15 no.4
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    • pp.281-284
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    • 2005
  • Room and high temperature deformation behaviors of Cu-Zr-Ti-Pd bulk metallic glasses produced by copper mold casting were investigated. The addition of Pd was shown to enhance the glass forming ability and thermal stability of Cu-Zr-Ti base bulk metallic glass. The compressive strength of $Cu_{55}Zr_{30}Ti_{10}Pd_5$ bulk metallic glass was 2230 MPa with 1.8 plastic strain. The stress overshoot and yield drop phenomenon were observed below $487^{\circ}C$ and a drastic decrease in the flow stress was observed at $487^{\circ}C$. The stress overshoot is thought to be associated with stress-induced structural relaxation.

Isolation and Transcriptional Expression of CuZn Superoxide Dismutase from Codonopsis lanceolata

  • Lee, Kang;In, Jun-Gyo;Yu, Chang-Yeon;Yun, Song-Joong;Min, Byung-Hoon;Rho, Yeong-Deok;Kim, Moo-Sung;Yang, Deok-Chun
    • Plant Resources
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    • v.7 no.3
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    • pp.163-169
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    • 2004
  • To investigate the defense mechanism against the abiotic stress, a cDNA clone encoding a CuZn superoxide dismutase (CuZnSOD) protein was isolated from a cDNA library prepared from tabroot mRNAs of Codonopsis lanceolata. The eDNA, designated ClSODCc, is 799 nucleotides long and has an open reading frame of 459 bp with a deduced amino acid sequence of 152 residues. The deduced amino acid sequence of ClSODCc matched to the previously reported CuZnSODs. Consensus amino acid residues (His-45, -47, -62, -70, -79, -119 and Asp-82) were involved in Cu-, Cu/Zn-, and Zn- binding ligands. The deduced amino acid sequence of ClSODCc showed high homologies (82%-86%) regardless of species. Expression of ClSODCc by oxidative stress was increased up to 1 h after treatment and declined gradually. Much earlier and stronger expression of ClSODCc was observed in the cold stress treatment.

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