• Proceedings of the KWS Conference
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• 2006.05a
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• pp.218-220
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• 2006

Sn-3.0Ag-0.5Cu solder is widely used as micro-joining materials of flip chip package(FCP) because of the fact that it causes less dissolution and has good thermal fatigue property. However, compared with ternary electroplating in the manufacturing process, binary electroplating is still used in industrial field because of easy to make plating solution and composition control. The objective of this research is to fabricate Sn-3.0Ag-0.5Cu solder bumping having accurate composition. The ternary Sn-3.0Ag-0.5Cu solder bumping could be made on a Cu pad by sequent binary electroplating of Sn-Cu and Sn-Ag. Composition of the solder was estimated by EDS and ICP-OES. The thickness of the bump was measured using SEM and the microstructure of intermetallic-compounds(IMCs) was observed by SEM and EDS. From the results, contents of Ag and CU found to be at $2.7{\pm}0.3wt%\;and\;0.4{\pm}0.1wt%$, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.81-88
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• 2010

Thermal annealing and electromigration test were performed at $150^{\circ}C$ and $4{\times}10^3\;A/cm^2$ conditions in order to investigate the effect of PCB surface finishs on the growth kinetics of intermetallic compound (IMC) in Sn-3.0Ag-0.5Cu solder bump. The surface finishes of the electrodes of printed circuit board (PCB) were organic solderability preservation (OSP), immersion Sn, and electroless Ni/immersion gold (ENIG). During thermal annealing, the OSP and immersion Sn show similar IMC growth velocity, while ENIG surface finish had much slower IMC growth velocity. Applying electric current accelerated IMC growth velocity and showed polarity effect due to directional electron flow.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.477-478
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• 2012

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.91-95
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• 2007

Electromigration characteristics of Sn-3.5Ag flip chip solder bump were analyzed using flip chip packages which consisted of Si chip substrate and electroplated Cu under bump metallurgy. Electromigration test temperatures and current densities peformed were $140{\sim}175^{\circ}C\;and\;6{\sim}9{\times}10^4A/cm^2$ respectively. Mean time to failure of solder bump decreased as the temperature and current density increased. The activation energy and current density exponent were found to be 1.63 eV and 4.6, respectively. The activation energy and current density exponent have very high value because of high Joule heating. Evolution of Cu-Sn intermetallic compound was also investigated with respect to current density conditions.

• Journal of the Korean institute of surface engineering
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• v.48 no.4
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• pp.131-135
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• 2015

We investigated the surface morphology and the change of Ag concentration for SnAg electrodeposits according to the current density using labmade and commercial plating solutions. The concentration of Ag in the SnAg electrodeposits decreased with increasing the current density. The Ag concentrations at the conditions of over $50mA/cm^2$ were below 3 wt% and the surface was relatively smooth. Cu pillar bump was fabricated by using SnAg electroplating, and it was reflowed at $240^{\circ}C$ for 90 sec. The cross-sectional microstructure was investigated by using EBSD measurement and it was found that the grain size of SnAg became smaller by increasing the number of reflow treatments.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.21-23
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• 2006

The microstructural investigation and thermo-mechanical reliability evaluation of the Sn-3.0Ag-0.5Cu solder bumped flip chip package were carried out during the thermal shock test of the package. In the initial reaction, the reaction product between the solder and Cu mini bump of chip side was Cu6Sn5 layer, while the two phases which were (Cu,Ni)6Sn5 and (Ni,Cu)3Sn4 were formed between the solder and Ni-P layer of the package side. The cracks were occurred at the corner solder joints after the thermal shocks of 400 cycles. The primary failure mechanism of the solder joints in this type of package was confirmed to be thermally activated solder fatigue failure.

• Journal of the Korean institute of surface engineering
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• v.35 no.1
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• pp.11-16
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• 2002

As environmental concerns increasing, the electronics industry is focusing more attention on lead free solder alternatives. In this research, we have researched wettability of intermediate solder of Sn3Ag9Bi5In, which include In and Bi and has similar melting temperature to Sn37Pb eutectic solder. We investigated the wetting property of Sn3Ag9Bi5In. To estimate wettability of Sn3Ag9Bi5In solder on various substrates, the wettability of Sn3Ag9Bi5In solder on high-pure Cu-coupon was measured. Cu-coupon that plated Sn, Ni and Au/Ni and Si-wafer adsorbed Ni/Cu under bump metallurgy on one side. As a result, the wetting property of Sn3Ag9Bi5In solder is a little better than that of Sn37Pb and Sn3.5Ag.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.469-470
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• 2012

• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.305-309
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• 2012

In this study, ZnO nanorods and $SnO_2$-CuO heterogeneous oxide were grown on membrane-type gas sensor platforms and the sensing characteristics for carbon monoxide (CO) were studied. Diaphragm-type gas sensor platforms with built-in Pt micro-heaters were made using a conventional bulk micromachining method. ZnO nanorods were grown from ZnO seed layers using the hydrothermal method, and the average diameter and length of the nanorods were adjusted by changing the concentration of the precursor. Thereafter, $SnO_2$-CuO heterogeneous oxide thin films were grown from evaporated Sn and Cu thin films. The average diameters of the ZnO nanorods obtained by changing the concentration of the precursor were between 30 and 200 nm and the ZnO nanorods showed a sensitivity value of 21% at a working temperature of $350^{\circ}C$ and a carbon monoxide concentration of 100 ppm. The $SnO_2$-CuO heterogeneous oxide thin films showed a sensitivity value of 18% at a working temperature of $200^{\circ}C$ and a carbon monoxide concentration of 100 ppm.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.45-51
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• 2001

The effects of wettability and surface oxidation on the low temperature and ultra-fine solder bump formation have been studied. Difference sequences of near eutectic In-Ag and eutectic Bi-Sn solders were evaporated on Au/Cu/Cr or Au/Ni/Ti Under Bump Metallurgy (UBM) pads. Solder bumps were formed using lift-off method and were reflowed in Rapid Thermal Annealing (RTA) system. The solder bumps in which In was in contact with UBM in In-Ag solder and the solder bumps in which Sn was in contact with UBM in Bi-Sn solder showed better bump formability during reflow than other solder bumps. The ability to form spherical solder bumps was affected mainly by the wettability of solders to UBM pads.