• Journal of Electrochemical Science and Technology
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• v.8 no.2
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• pp.146-154
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• 2017

In this study, copper (II) oxide was prepared for use in a copper electroplating solution. Copper chloride powder and copper (II) oxide are widely used as raw materials for electroplating. Copper (II) oxide was synthesized in this study using a two-step chemical reaction. Herein, we developed a method for the preparation of copper (II) oxide without the use of sintering. In the first step, copper carbonate was prepared without sintering, and then copper (II) oxide was synthesized without sintering using sodium hydroxide. The optimum amount of sodium hydroxide used for this process was 120 g and the optimum reaction temperature was $120^{\circ}C$ regardless of the starting material.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.214-218
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• 1999

The effect of additives in nickel and copper electroplating were investigated for MEMS applications. Saccharin and gelatin were used as additives in nickel and copper electroplating bath respectively. The morphology and surface hardness of electroplated coating were investigated with additive concentration. Microstructures were fabricated with optimum conditions.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.2 s.39
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• pp.9-13
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• 2006

The copper lines in COF are usually fabricated by subtractive method. As the width of lines are smaller, the subtractive method has a lateral etching problems. In semi-additive method, copper lines are fabricated by lithographic technique followed by electroplating method. Fine line patterns of $10-40{\mu}m$ were used for this study. Two different types of thick photoresist, AZ4620 and PMER900, were employed for PR mold. Copper lines were fabricated by electroplating method. The crack were found in fine copper lines due to high residual stress when normal copper electroplating bath were used. The via filling copper electroplating bath were replaced the normal electroplating bath and then cracks were not found in the fine copper lines. During substrate etching, the lateral etching of copper lines were not occurred.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.802-809
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• 2001

Electroplating is an attractive alternative deposition method for copper with the need for a conformal and conductive seed layer In addition, the Cu seed layer should be highly pure so as not to compromise the effective resistivity of the filled copper interconnect structure. This seed layer requires low electrical resistivity, low levels of impurities, smooth interface, good adhesion to the barrier metal and low thickness concurrent with coherence for ensuring void-free fill. The electrical conductivity of the surface plays an important role in formation of initial Cu nuclei, Cu nucleation is much easier on the substrate with higher electrical conductivities. It is also known that the nucleation processes of Cu are very sensitive to surface condition. In this study, copper seed layers deposited by magnetron sputtering onto a tantalum nitride barrier layer were used for electroplating copper in the forward pulsed mode. Prior to electroplating a copper film, the Cu seed layer was cleaned by plasma H$_2$ and $N_2$. In the plasma treatment exposure tome was varied from 1 to 20 min and plasma power from 20 to 140W. Effects of plasma pretreatment to Cu seed/Tantalum nitride (TaN)/borophosphosilicate glass (BPSG) samples on electroplating of copper (Cu) films were investigated.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.194.1-194.1
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• 2016

The present study investigated the effect of zincate treatment time on the dissolution behavior and the deposition of copper by immersion process and electroplating process on AZ31 Mg alloy substrate in a copper pyrophosphate bath. Without zincate pretreatment, the AZ31 Mg substrate quickly dissolved in the copper pyrophosphate solution although an external cathodic current was applied. The copper layers deposited on non-zincate treated AZ31 Mg alloy substrate by both immersion and electroplating processes showed very porous structure and very poor adhesion. With increasing zincate treatment time up to 2 min, the dissolution of AZ31 substrate in pyrophosphate solution rapidly decreased and the deposited copper layer was less porous and exhibited stronger adhesion. The immersion of AZ31 Mg sample in zincate solution for 5 min was found as a critical time for producing a non-porous and adherent electrodeposited copper layer on AZ31 Mg alloy. The optimum zincating time can be determined by observing the open circuit potential (OCP) of AZ31 Mg alloy samples in a copper pyrophosphate electroplating bath. The OCP reached a stable value of about -0.10 V (vs. SCE) after 5 min of immersion in the copper pyrophosphate electroplating solution.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.10
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• pp.1-8
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• 2003

Copper thin films were deposited on a Cu/Ta/Si substrate using the electroplating technique. Deposition rate was about 200 nm/min in proportion to current density and in inverse proportion to flow rate. Resistivity of copper thin film was approximately 2.1 ${\mu}$Ωcm and Int$\sub$(111)//Int$\sub$(200)/ ratio of copper film was 5.4 and no significant impurities were detected. After the deposition, electroplating copper films were annealed at various temperatures in a background pressure of 10$\^$-3/ torr. The resistivity of copper thin films were improved by ∼17 % and texture was improved by ∼40 % after annealing at 170$^{\circ}C$. The stress in films was not reduced much after annealing below 170$^{\circ}C$.

• Korean Journal of Materials Research
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• v.29 no.4
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• pp.228-232
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• 2019

Copper electroplating and electrode patterning using a screen printer are applied instead of lithography for heterostructure with intrinsic thin layer(HIT) silicon solar cells. Samples are patterned on an indium tin oxide(ITO) layer using polymer resist printing. After polymer resist patterning, a Ni seed layer is deposited by sputtering. A Cu electrode is electroplated in a Cu bath consisting of $Cu_2SO_4$ and $H_2SO_4$ at a current density of $10mA/cm^2$. Copper electroplating electrodes using a screen printer are successfully implemented to a line width of about $80{\mu}m$. The contact resistance of the copper electrode is $0.89m{\Omega}{\cdot}cm^2$, measured using the transmission line method(TLM), and the sheet resistance of the copper electrode and ITO are $1{\Omega}/{\square}$ and $40{\Omega}/{\square}$, respectively. In this paper, a screen printer is used to form a solar cell electrode pattern, and a copper electrode is formed by electroplating instead of using a silver electrode to fabricate an efficient solar cell electrode at low cost.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.1
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• pp.30-37
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• 2005

We present an air bridge type electrode system with tunable electrode distance for detecting electroactive biomolecules. It is known that the narrower gap between electrode fingers, the higher sensitivity in IDA (interdigitated array) electrode. In previous researches on IDA electrode, narrower patterning required much precise and expensive equipment as the gap goes down to nanometer scale. In this paper, an improved method is suggested to replace nano gap pattering with downsizing electrode distance and showed that the patterning can be replaced by thickness control using metal deposition methods, such as electroplating or metal sputtering. The air bridge type electrode was completed by the following procedures: gold patterning for lower electrode, copper electroplating, gold deposition for upper electrode, photoresist patterning for gold film support, and copper etching for space formation. The thickness of copper electroplating is the distance between upper and lower electrodes. Because the growth rate of electroplating is $0.5{\mu}m\;min^{-1}$, the distance is tunable up to hundreds of nanometers. Completed electrodes on the same wafer had $5{\mu}m$ electrode distance. The gaps between fingers are 10, 20, 30, and $40{\mu}m$ and the widths of fingers are 10, 20, 30, 40, and $50{\mu}m$. The air bridge type electrode system showed better sensitivity than planar electrode.

• Corrosion Science and Technology
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• v.6 no.4
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• pp.154-158
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• 2007

For the application of flexible printed circuit board (FPCB), electroplated copper is required to have low surface roughness and residual stress. In the paper, the effects of surface roughness and residual stress of electroplated copper as thick as $8{\mu}m$ were studied on organic additives such as inhibitor, leveler and accelerator. Polyimide film coated with sputtered copper was used as a substrate. Surface roughness and surface morphology were measured by 3D-laser surface analysis and FESEM, respectively. Residual stress was calculated by Stoney's equation after measuring radius curvature of specimen. The addition of additives except high concentration of accelerator in the electrolyte decreased surface roughness of electroplated copper film. Such a tendency was explained by the function of additives among which the inhibitor and the leveler inhibit electroplating on a whole surface and prolusions, respectively. The accelerator plays a role in accelerating the electroplating in valley parts. The inhibitors and the leveler increased residual stress, whereas the accelerator decreased it. It was thought to be related with entrapped additives on electroplated copper film rather than the preferred orientation of electroplated copper film. The reason why additives lead to residual stress remains for the future work.

• Korean Journal of Metals and Materials
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• v.48 no.3
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• pp.218-224
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• 2010

Direct copper electroplating on Mg alloy AZ31B was carried out in a traditional pyrophosphate copper bath containing potassium fluoride. Electrochemical impedance spectroscopy and polarization methods were used to study the effects of added potassium fluoride on electrochemical behavior. The chemical state of magnesium alloy in the electroplating bath was analyzed by X-ray photoelectron spectroscopy. Adhesion of the copper electroplated layer was also tested. Due to the added potassium fluoride, a magnesium fluoride film was formed in the pyrophosphate copper bath. This fluoride film inhibits dissolution of Mg alloy and enables to electroplate copper directly on it. A dense copper layer was formed on the Mg alloy. Moreover, this copper layer has a good adhesion with Mg alloy substrate.