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Growth and Annealing Effect of Cu thin Films Using Electroplating Technique  

박병남 (경북대학교 전자전기공학부)
강현재 (경북대학교 전자전기공학부)
최시영 (경북대학교 전자전기공학부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.40, no.10, 2003 , pp. 1-8 More about this Journal
Abstract
Copper thin films were deposited on a Cu/Ta/Si substrate using the electroplating technique. Deposition rate was about 200 nm/min in proportion to current density and in inverse proportion to flow rate. Resistivity of copper thin film was approximately 2.1 ${\mu}$Ωcm and Int$\sub$(111)//Int$\sub$(200)/ ratio of copper film was 5.4 and no significant impurities were detected. After the deposition, electroplating copper films were annealed at various temperatures in a background pressure of 10$\^$-3/ torr. The resistivity of copper thin films were improved by ∼17 % and texture was improved by ∼40 % after annealing at 170$^{\circ}C$. The stress in films was not reduced much after annealing below 170$^{\circ}C$.
Keywords
Copper; electroplating; annealing; resistivity; deposition rate;
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