Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Growth and Annealing Effect of Cu thin Films Using Electroplating Technique

전해도금법을 이용한 구리 박막의 성장 및 열처리 효과

  • 박병남 (경북대학교 전자전기공학부) ;
  • 강현재 (경북대학교 전자전기공학부) ;
  • 최시영 (경북대학교 전자전기공학부)
  • Published : 2003.10.01
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Abstract

Copper thin films were deposited on a Cu/Ta/Si substrate using the electroplating technique. Deposition rate was about 200 nm/min in proportion to current density and in inverse proportion to flow rate. Resistivity of copper thin film was approximately 2.1 ${\mu}$Ωcm and Int$\sub$(111)//Int$\sub$(200)/ ratio of copper film was 5.4 and no significant impurities were detected. After the deposition, electroplating copper films were annealed at various temperatures in a background pressure of 10$\^$-3/ torr. The resistivity of copper thin films were improved by ∼17 % and texture was improved by ∼40 % after annealing at 170$^{\circ}C$. The stress in films was not reduced much after annealing below 170$^{\circ}C$.

본 연구는 Cu/Ta/Si 기판 위에 전해 도금법으로 성장시킨 구리 박막을 성장 시켰다. 성장 속도는 음극 전류 밀도에 비례하고, 용액의 유량에 반비례하였다. 성장된 구리 박막의 저항률은 약 2.1 μΩ㎝ 이었고, Int/sub (111)//Int/sub (200)/, 비는 5.4였으며, 박막내에 불순물은 발견되지 않았다. 성막후에 10/sup -3/ torr 진공 중에서 온도를 변화해 가면서 열처리를 수행하였다. 열처리후에 저항률은 17 %, 결정성은 40 ％의 향상을 보였으며 170℃ 까지는 박막의 스트레스는 변화가 없었다.

Keywords

References

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