• Journal of the Korean Ceramic Society
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• v.23 no.4
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• pp.1-10
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• 1986

The crystallization behaviour and the machinability of mica glass-ceramics with the content of F1 were studied. The material was made from the $K_2O-MgO-Al_2O_3-B_2O_3-SiO_2-F$ glasses by the heattreatment at 80$0^{\circ}C$-110$0^{\circ}C$ where the content of F-1 was changed in the range from 1, 3wt% to 6.1wt%. X-ray diffraction phase analysis and optical observation were adopted to study the crystallization behaviour. The machinability was measured by a manual sawing test and MOR. The crystal phases of these glass-ceramics identified by XRD were chondrodite fluoborite and norbergite at low temperature but fluorophlogopite at high temperature. The crystallization of glasses containing 1.3wt% -2.5wt% F-1 were predominately controlled by surface crystallization while the crystallization of glasses containing 3.8 wt% -6.1wt% F-1 were controlled by volume crystallization. Among the test the best machinability and strength value were obtained from those specimens contained fluoride 4.2wt% -4.4wt% and when the heattreatment was performed at 95$0^{\circ}C$-110$0^{\circ}C$ for 2 hours.

• Applied Microscopy
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• v.51
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• pp.1.1-1.2
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• 2021

We demonstrate a fabrication of an atomically controlled single-crystal heart-shaped nanostructure using a convergent electron beam in a scanning transmission electron microscope. The delicately controlled e-beam enable epitaxial crystallization of perovskite oxide LaAlO₃ grown out of the relative conductive interface (i.e. 2 dimensional electron gas) between amorphous LaAlO₃/crystalline SrTiO₃.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.511-514
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• 1995

The crystallization kinetics of $Fe_{73.5}Si_{13.5}B_{9}Cu_{1}Nb_{3}$ amorphous alloy has been investigated using differential scanning calorimetry (DSC). The crystallization process had two stages, i.e. precipitation of the $\alpha$-Fe(Si) solid solution and the tetragonal borides. The isothermal transformation data of the amorphous alloy has been fitted successfully to the generalized Johnson-Mehl-Avrami equation. The mean time exponent, n, obtained is close to 2.5. The value of n=2.5 may be interpreted as being due to a diffusion-controlled transformation process with a constant nucleation rate, one likely transformation mode for the crystallization of metallic amorphous alloys. The activation energy of the overall crystallization process deduced from the time to 50% crystallization are about 81 kcal/mole. The value is of the same order as those estimated from viscous flow.

• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.890-893
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• 1998

• Journal of the Korean institute of surface engineering
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• v.41 no.2
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• pp.48-50
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• 2008

Solid phase crystallization (SPC) of amorphous silicon is usually conducted at around $600^{\circ}C$ since it is used in the application of flat panel display using thermally susceptible glass substrate. In this study we conducted SPC experiments at temperatures higher than $600^{\circ}C$ using silicon wafers. Crystallization rate becomes dramatically rapid at higher temperatures since SPC kinetics is controlled by nucleation with high value of activation energy. We report SPC kinetics of high temperatures compared to that of low temperatures.

• Journal of the Korean Ceramic Society
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• v.29 no.10
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• pp.765-772
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• 1992

As the fundamental research of preparation of fine single crystalline ferroxplana by means of glass-crystallization methods using steel twin-roller the properties of ferroxplana extracted from cyrstallized glass were studied. Most of all the specimens quenched by twin-roller at about 1350$^{\circ}C$ were glass phase, the crystallization of these glass had multi-steps and ferroxplana phase was only stable untill 900$^{\circ}C$, began to be decomposed from about 950$^{\circ}C$ in glass. The morphology of particle could be controlled by the composition and crystallization condition, and Zn2+ was replaced by reduced Fe2+ which is 2∼3% contents of total Fe. Ferroxplana extracted had such magnetic properties as Ms=34 emu/g, mHc=10 Oe and Curie Temperature, Tc=425K.

• Korean Journal of Materials Research
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• v.18 no.3
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• pp.113-116
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• 2008

A 532 nm Nd-YAG laser was applied to crystallize amorphous Si thin films in order to evaluate the applicability of a Nd-YAG laser to low-temperature polycrystalline Si technology. The irradiation of a green laser was controlled during the crystallization of amorphous Si thin films deposited onto glass substrates in a sophisticated process. Raman spectroscopy and UV-Visible spectrophotometry were employed to quantify the degree of crystallization in the Si thin films in terms of its optical transmission and vibrational characteristics. The effectiveness of the Nd-YAG laser is suggested as a feasible alternative that is capable of crystallizing the amorphous Si thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.95-100
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• 2000

For the well-controlled growing in-situ heavily phosphorus doped polycrystalline Si films directly on Si wafer by reduced pressure chemical vapor deposition, a study is made of the two step growth. When in-situ heavily phosphorus doped Si films were deposited directly on Si (100) wafer, crystal structure in the film is not unique, that is, the single crystal to polycrystalline phase transition occurs at a certain thickness. However, the well-controlled polycrtstalline Si films deposited by two step growth grew directly on Si wafers. Moreover, the two step growth, which employs crystallization of grew directly on Si wafers. Moreover, the two step growth which employs crystallization of amorphous silicon layer grown at low temperature, reveals crucial advantages in manipulating polycrystal structures of in-situ phosphorous doped silicon.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.142.3-142
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• 1998

• Journal of the Korean Ceramic Society
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• v.22 no.2
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• pp.44-50
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• 1985

The crystallization behavior of $K_2O-SiO_2$ glasses with added $TiO_2$ and the effect of $TiO_2$ on internal nuleation at temperature in the range of 875 to 121$0^{\circ}C$ have been investigated by means of X-ray diffractometry optical microscopy and scanning electron microscopy. The crystalline phase of these glasses identified by X-ray diffractometry is cristbalite. The scanning electron microspcopy reveals a two-phase layer of dendritic crystals and intersitial melt which grow from the surface at a constant rate, The observed crystallization rates are consistent with a diffusion-controlled mechanism. An equation relating viscosity and undercooling to growth rate is presented.