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http://dx.doi.org/10.3740/MRSK.2008.18.3.113

Application of 532 nm YAG-Laser Annealing to Crystallization of Amorphous Si Thin Films Deposited on Glass Substrates  

Lee, Jong-Won (Dept. of Materials Science and Engineering, Hongik Univeristy)
So, Byung-Soo (Dept. of Materials Science and Engineering, Hongik Univeristy)
Chung, Ha-Seung (Dept. of Mechanical and System Design Engineering, Hongik Univeristy)
Hwang, Jin-Ha (Dept. of Materials Science and Engineering, Hongik Univeristy)
Publication Information
Korean Journal of Materials Research / v.18, no.3, 2008 , pp. 113-116 More about this Journal
Abstract
A 532 nm Nd-YAG laser was applied to crystallize amorphous Si thin films in order to evaluate the applicability of a Nd-YAG laser to low-temperature polycrystalline Si technology. The irradiation of a green laser was controlled during the crystallization of amorphous Si thin films deposited onto glass substrates in a sophisticated process. Raman spectroscopy and UV-Visible spectrophotometry were employed to quantify the degree of crystallization in the Si thin films in terms of its optical transmission and vibrational characteristics. The effectiveness of the Nd-YAG laser is suggested as a feasible alternative that is capable of crystallizing the amorphous Si thin films.
Keywords
YAG laser; crystallization; amorphous Si; polycrystalline Si;
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