• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.357-362
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• 2007

AZO(Aluminum-doped Zinc Oxide) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with ITO(Indium Tin Oxide). AZO films have been deposited on glass (corning 1737) substrates by RF magnetron sputtering. The AZO film was post-annealed at $600^{\circ}C$ for 2 hr with $N_2$ atmosphere. The AZO films were used as an anode contact to fabricate OLEDs(Organic Light Emitting Diodes). OLEDs with $AZO/TPD/Alq_3/Al$ configuration were fabricated by thermal evaporation. We investigated that the electric, structural and optical properties of AZO thin films, which measured using the methods of XRD, SEM, Hall measurement and Spectrophotometer. The current density-voltage and luminescence-voltage properties of devices were studied and compared with ITO devices fabricated under the same conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.210-213
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. Memory switching in chalcogenides is mostly a thermal process, which involves phase transformation from amorphous to crystalline state. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• Korean Journal of Materials Research
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• v.24 no.3
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• pp.145-151
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• 2014

Solution-based Sb-doped $SnO_2$ (ATO) transparent conductive oxides using a low-temperature process were fabricated by an electrospray technique followed by spin coating. We demonstrated their structural, chemical, morphological, electrical, and optical properties by means of X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, atomic force microscopy, Hall effect measurement system, and UV-Vis spectrophotometry. In order to investigate optimum electrical and optical properties at low-temperature annealing, we systemically coated two layer, four layer, and six layers of ATO sol-solution using spin-coating on the electrosprayed ATO thin films. The resistivity and optical transmittance of the ATO thin films decreased as the thickness of ATO sol-layer increased. Then, the ATO thin films with two sol-layers exhibited superb figure of merit compared to the other samples. The performance improvement in a low temperature process ($300^{\circ}C$) can be explained by the effect of enhanced carrier concentration due to the improved densification of the ATO thin films causing the optimum sol-layer coating. Therefore, the solution-based ATO thin films prepared at $300^{\circ}C$C exhibited the superb electrical (${\sim}7.25{\times}10^{-3}{\Omega}{\cdot}cm$) and optical transmittance (~83.1 %) performances.

• Journal of Powder Materials
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• v.23 no.6
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• pp.414-419
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• 2016

Much attention has been paid to thermally conductive materials for efficient heat dissipation of electronic devices to maintain their functionality and to support lifetime span. Hexagonal boron nitride (h-BN), which has a high thermal conductivity, is one of the most suitable materials for thermally conductive composites. In this study, we synthesize h-BN nanocrystals by pyrolysis of cost-effective precursors, boric acid, and melamine. Through pyrolysis at $900^{\circ}C$ and subsequent annealing at $1500^{\circ}C$, h-BN nanoparticles with diameters of ~80 nm are synthesized. We demonstrate that the addition of small amounts of Eu-containing salts during the preparation of melamine borate precursors significantly enhanced the crystallinity of h-BN. In particular, addition of Eu assists the growth of h-BN nanoplatelets with diameters up to ~200 nm. Polymer composites containing both spherical $Al_2O_3$ (70 vol%) and Eu-doped h-BN nanoparticles (4 vol%) show an enhanced thermal conductivity (${\lambda}{\sim}1.72W/mK$), which is larger than the thermal conductivity of polymer composites containing spherical $Al_2O_3$ (70 vol%) as the sole fillers (${\lambda}{\sim}1.48W/mK$).

• Korean Journal of Metals and Materials
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• v.56 no.12
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• pp.915-920
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• 2018

With the development of modern microelectronics technologies, the power density of electronic devices is rapidly increasing, due to the miniaturization or integration of device elements which operate at high frequency, high power conditions. Resulting thermal problems are known to cause power leakage, device failure and deteriorated performance. To relieve heat accumulation at the interface between chips and heat sinks, thermal interface materials (TIMs) must provide efficient heat transport in the through-plane direction. We report on the enhanced thermal conduction of $Al_2O_3-based$ polymer composites, fabricated by the surface wetting and texturing of thermally conductive hexagonal boron nitride(h-BN) nanoplatelets with large anisotropy in morphology and physical properties. The thermally conductive polymer composites were prepared with hybrid fillers of $Al_2O_3$ macro beads and surface modified h-BN nanoplatelets. Hexagonal boron nitride (h-BN) has high thermal conductivity and is one of the most suitable materials for thermally conductive polymer composites, which protect electronic devices by efficient heat dissipation. In this study, we synthesized hexagonal boron nitride nanoparticles by the pyrolysis of cost effective precursors, boric acid and melamine. Through pyrolysis at $900^{\circ}C$ and subsequent annealing at $1500^{\circ}C$, hexagonal boron nitride nanoparticles with diameters of ca. 50nm were synthesized. We demonstrate that the addition of a small amount of calcium fluoride ($CaF_2$) during the preparation of the melamine borate adduct significantly enhanced the crystallinity of the h-BN and assisted the growth of nanoplatelets up to 100nm in diameters. The addition of a small amount of h-BN enhanced the thermal conductivity of the $Al_2O_3-based$ polymer composites, from 1.45W/mK to 2.33 W/mK.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.788-791
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• 2002

Tin doped indium oxide(ITO) films are highly conductive and transparent in the visible region whose property leads to the applications in solar cell, liquid crystal display, thermal heater, and other sensors. This paper investigated ITO films as a transparent conducting films for application of PDP. ITO films were grown on glass substrate by RF magnetron sputtering method. To achieve high transmittance and low resistivity, we examined the various film deposition such as substrate temperature, gas pressure, annealing temperature, and deposition time. We recommend the substrate temperature of $500^{\circ}C$ and post annealing of $200^{\circ}C$ in $O_2$ atmosphere for good conductivity and transmittance. From XRD examination, ITO films showed a preferred(222) orientation. As substrate temperature increased from RT to $500^{\circ}C$, the intensity of the (222) peak increased. The highest peak intensity was observed at a substrate temperature of $500^{\circ}C$. with the optimum growth conditions, ITO films showed resistivity of $1.04{\times}10^{-4}{\Omega}-cm$ and transmittance of 81.2% for a film 300nm thick in the wavelength range of the visible spectrum.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1370-1375
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• 2004

This article investigates the heat transfer characteristics in a RTA system for LCD manufacturing and suggests a way to evaluate the quality of a poly-Si film from the thin film optics analysis. The transient and one-dimensional conductive/radiative heat transfer equation considering wave interference effect is solved to predict surface temperatures of thin films. In dealing with radiative heat transfer, a one-dimensional two-flux method is used and the ray tracing method is also utilized to account for the wave interference effects. It is assumed that each interface is assumed diffusive but the spectral radiative properties are included. It is found that the selective heating region exists for various wavelengths and consequently may contribute to heat the poly-Si film. Using the formalism of the characteristic transmission matrix, the lumped structure reflectance, transmittance, and absorptance are calculated and they are compared with experimental data of the poly-Si film during the SPC process via the FE-RTA (Field-Enhanced RTA) technology.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.18-22
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• 2002

ITO thin films with thickness of 3000 $\AA$ were fabricated by rf magnetron sputtering system with a 10 mol % SnO$_2$-90 mol % In$_2$O$_3$target at various substrate temperature and annealing temperature in air. And we investigated structural, electrical and optical characteristics of them. It's resistivity, carrier concentration and Hall mobility was 2$\times$10$\^$-4/ Ωcm, 7$\times$10$\^$20/∼ 9$\times$10$\^$20/ cm$\^$-3/ and 21∼23 cm$^2$/V$.$sec respectively. And it's optical transmittance and energy band gap was above 85 % in the visible range and 3.53 eV respectively.

• Current Photovoltaic Research
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• v.11 no.4
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• pp.103-107
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• 2023

A Nickel oxide (NiO_x) thin films were prepared via sol-gel process on a transparent conductive oxide glass substrate. The NiO_x thin films were spin-coated in ambient air and subsequently annealed for 30 minutes at temperatures ranging from 150℃ to 450℃. The structural and optical characteristics of the NiO_x thin films annealed at various temperatures were measured using X-ray diffraction, field emission scanning electron microscopy, and ultraviolet-visible spectroscopy. After optimizing the NiO_x coating conditions, perovskite solar cells were fabricated with p-i-n inverted structure, and its photovoltaic performance was evaluated. NiO_x thin films annealed at 350℃ exhibited the most favorable characteristics as a hole transport layer, resulting in the highest power conversion efficiency of 17.88 % when fabricating inverted perovskite solar cells using this film.

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.117-124
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• 2007

The ITO films were deposited on glass substrates by RF-superimposed dc reactive magnetron sputtering and were annealed in $N_2$ vacuum furnace with temperatures in the range of $403K{\sim}573K$ for 30 minutes. Electrical, optical and structural properties of ITO films were examined with varying annealing temperatures from 403 K to 573 K. The resistivity of as-deposited ITO films was $5.4{\times}10^{-4}{\Omega}cm$ at the sputter conditions of applied RF/DC power of 200/200 W, $O_{2}$ flow of 0.2 seem and Ar flow of 0.2 seem. As a result of annealing in the temperature range of $403K{\sim}573K$, the crystallization occurred at 423 K that is lower than the crystallization temperature caused by a conventional sputtering method. And the resistivity decreased from $5.4{\times}10^{-4}{\Omega}cm\;to\;2.3{\times}10^{-4}{\Omega}cm$, the carrier concentration and mobility of ITO films increased from $4.9{\times}10^{20}/cm^3\;to\;6.4{\times}10^{20}/cm^3$, from $20.4cm^2/Vsec\;to\;41.0cm^2/Vsec$, respectively. The transmittance of ITO films in visible became higher than 90% when annealed in the temperature range of $423K{\sim}573K$. High quality ITO thin films made by RF-superimposed dc reactive magnetron sputtering and annealing in $N_2$ vacuum furnace will be applied to transparent conductive oxides of the advanced flat panel display.