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http://dx.doi.org/10.4313/TEEM.2002.3.1.018

Properties of Indium Tin Oxide Transparent Conductive Thin Films at Various Substrate and Annealing Temperature  

Jeong, Woon-Jo (Department of Information & Telocommnication, Hanlyo University)
Kim, Seong-Ku (Department of Electrical engineering, UCLA)
Kim, Jong-Uk (School of Electronics & Information Engineering, Chonbuk National University)
Park, Gye-Choon (Department of Electrical Engineering, Mokpo National University)
Gu, Hal-Bon (Department of Electrical Engineering, Chonnam National University)
Publication Information
Transactions on Electrical and Electronic Materials / v.3, no.1, 2002 , pp. 18-22 More about this Journal
Abstract
ITO thin films with thickness of 3000 $\AA$ were fabricated by rf magnetron sputtering system with a 10 mol % SnO$_2$-90 mol % In$_2$O$_3$target at various substrate temperature and annealing temperature in air. And we investigated structural, electrical and optical characteristics of them. It's resistivity, carrier concentration and Hall mobility was 2$\times$10$\^$-4/ Ωcm, 7$\times$10$\^$20/∼ 9$\times$10$\^$20/ cm$\^$-3/ and 21∼23 cm$^2$/V$.$sec respectively. And it's optical transmittance and energy band gap was above 85 % in the visible range and 3.53 eV respectively.
Keywords
Indium Tin Oxide (ITO); Transparent conducting oxide (TCO); RF magnetron sputtering; Electrical resistivity; Optical transmittance;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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