• 한국전기전자재료학회논문지
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• 제13권10호
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• pp.812-816
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• 2000

It is very important to understand the correlation of between inter dielectric(ILD) CMP process and various facility factors supplied to equipment to equipment system. In this paper, the correlation between the various facility factors supplied to CMP equipment system and ILD-CMP process was studied. To prevent the partial over-polishing(edge hot-spot) generated in the wafer edge area during polishing, we analyze various facilities supplied at supply system. With facility shortage of D.I water(DIW) pressure, we introduced an adding purified $N_2$(P$N_2$)gas in polishing head cleaning station for increasing a cleaning effect. DIW pressure and P$N_2$gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. We estimated two factors (DIW pressure and P$N_2$gas) for the improvement of CMP process. Especially, we obtained a uniform planarity in patterned wafer and prohibited more than 90% wafer edge over-polishing. In this study, we acknowledged that facility factors supplied to equipment system played an important role in ILD-CMP process.

• 한국멀티미디어학회논문지
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• 제13권3호
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• pp.400-409
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• 2010

본 논문에서는 반도체 생산 공정 중 클리닝 공정 설비에서, 웨이퍼의 장착 위치를 인식하는 영상 인식 시스템을 제안한다. 제안한 시스템은 웨이퍼의 위치 이탈에 따른 위치오차 발생 시 이를 클리닝 설비에 전달하여, 웨이퍼 클리닝 장비의 파손을 방지하여 시스템의 신뢰성과 경제성을 높이기 위한 것이다. 시스템의 주요 알고리즘은 카메라에 획득된 영상과 실제 웨이퍼간의 캘리브레이션 방법, 적외선 조명 및 필터 설계, 최소자승법 기반의 원 생성알고리즘에 의한 중심위치 판별법이다. 제안한 시스템은 고 신뢰성과 고 정밀의 위치인식 알고리즘을 사용하여, 효율적으로 웨이퍼 인라인 공정에 설치함을 목표로 하며 실험결과 충분한 허용 기준 내에서 오차를 검출해내는 좋은 성능을 보여준다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.1-5
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• 2000

As the semiconductor devices are miniaturized, the number of the unit cleaning processes increases. In order to processes by conventional RCA cleaning process, the consumption of volume of liquid chemical and DI water became huge. Therefore, the problem of environmental issues are evolved by the increased consumption of chemicals. To resolve this matter, an advanced cleaning process by Electrolyzed Water was studied in this work. The electrolyzed water was made by an electrolysis equipment which was composed of three chambers of anode, cathode, and middle chambers. In the case of electrolyzed water with electrolytes in the middle chamber, oxidatively acidic water of anode and reductively alkaline water of cathode were obtained. The oxidation/reduction potentials and pH of anode water and cathode water were measured to be +l000mV and 4.8, and -530mV and 6.3, respectively. The Si-wafers contaminated with metallic impurities were cleaning with the electrolyzed water. To analysis the amounts of metallic impurities on Si-water surfaces, ICP-MS(Inductively Coupled Plasma-Mass spectrometer) was introduced. From results of ICP-MS measurements, it was concluded that the ability of electrolyzed water was equivalent to that of the conventional RCA cleaning.

• 한국표면공학회지
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• 제54권6호
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• pp.365-370
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• 2021

In this research, we proceeded with research on plasma resistance of the cleaning process of APS(Atmospheric Plasma Spray)-Y₂O₃ coated parts used for semiconductor and display plasma process equipment. CF₄, O₂, and Ar mixed gas were used for the plasma environment, and respective alconox, surfactant, and piranha solution was used for the cleaning process. After APS-Y₂O₃ was exposed to CF₄ plasma, the surface changed from Y₂O₃ to YF₃ and a large amount of carbon was deposited. For this reason, the plasma corrosion resistance was lowered and contamination particles were generated. We performed a cleaning process to remove the defect-inducing surface YF₃ layer and carbon layer. Among three cleaning solutions, the piranha cleaning process had the highest detergency and the alconox cleaning process had the lowest detergency. Such results could be confirmed through the etching amount, morphology, composition, and accumulated contamination particle analysis results. Piranha cleaning process showed the highest detergency, but due to the very large thickness reduction, the base metal was exposed and a large number of contaminated particles were generated. In contrast, the surfactant cleaning process exhibit excellent properties in terms of surface detergency, etching amount, and accumulated contamination particle analysis.

• 대한가정학회지
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• 제35권1호
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• pp.75-84
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• 1997

This study is a content analysis of housing management as shown in the Sa-so-jul. This book is written by Lee, Duk Moo in 1741 during Chosun dynasty. This contents relates to life management. The contents of housing management were storage cleaning and equipment management. The major findings this study are as follows. 1) Housing management was charged with woman. 2) Contents of housing managements were storage cleaning and equipment management. 3) It goes into detial. 4) Housing management relates to clothing & food management. 5) In the traditional society woman have to upright in her actions which is housing management. But today things are not what they used to be. A woman does not think anymore to do work housekeeping. But an idea of life does not change. So it is following as shown in the Sa-so-jul. 1) We must to clean for housing management. 2) Housing management is for my family and our neighborhood.

• 반도체디스플레이기술학회지
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• 제3권2호
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• pp.11-15
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• 2004

Scales, accumulated on some parts of semiconductor equipments such as sputters and CVD during the device fabrication processes, often lower the lifetime of the equipments and production yields. Thus, many equipment parts have be cleaned regularly. In this study, an attempt to establish an effective process to remove scales on the sidewall of collimators located inside the chamber of the sputter was made. The EDX analysis revealed that the scales were composed of Ti and TiN with the columnar structure. Through the trial-and-error experiments, it was found that the etching in the $HNO_3$:$H_2SO_4$:$H_2O$=4:2:4 solution for 5.5 hrs at $67^{\circ}C$, after the oxide removal in the HF solution, and the heat-treatment at $700^{\circ}C$ for 1 min., was the most effective process for the scale removal.

• 한국기록관리학회지
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• 제13권1호
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• pp.35-58
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• 2013

기록물 보존챔버란 소량의 중요기록물을 안정성 높은 보존환경에서 영구보존하는 데 적합한 장비이다. 이 장비는 소량의 기록물을 영구보존하기 위한 공공기관이나 민간단체에서 기록물을 경제적이면서 안전하게 장기보존하기에 적합한 장비이다. 본 연구는 지방기록관의 기록물 보존현황 조사를 통해 보존챔버의 필요성을 분석한 후 보존챔버의 핵심부분을 설계함으로 기록물을 안정적이면서 경제적으로 보존할 수 있는 방안을 모색하였다. 기록물 보존챔버는 크게 기록물을 보존하는 보존공간, 보존환경 유지를 위한 공기정화장치부, 보존환경을 모니터링하기 위한 환경측정장치부로 구성된다. 기록물 보존공간은 외부 공기의 출입을 막고 내부공기가 순환함으로 항온항습 유지 및 유해가스 제거가 가능하도록 하였다. 이렇게 설계된 보존챔버는 소량의 기록물을 서고에서 보존할 때보다 더 경제적으로 보존할 수 있는 것으로 산출되었다.

• 조명전기설비학회논문지
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• 제20권8호
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• pp.6-14
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• 2006

본 논문은 TFT-LCD(Thin Film Transistor Liquid Crystal Display) PECVD(Plasma Enhanced Chemical Vapor Deposition) 장비 공정용 챔버(Chamber) 세정을 위한 새로운 플라즈마 세정방법에 적합한 플라즈마 발생방법과 플라즈마 발생을 위한 고주파 전원장치의 전력회로에 관한 연구이다. 세정에 요구되는 고밀도 플라즈마는 안테나 형태의 기존 ICP(Inductively Coupled Plasma) 방식에 강자성체인 페라이트 코어를 적용하므로 써 $1{\times}10^{11}[EA/cm^3]$이상의 고밀도 플라즈마 발생을 가능하게 하였다. 플라즈마 발생을 위한 400[kHz] 고주파 전력 변환장치의 경우 범용 HB(Half Bridge) 인버터 방식을 적용하여 플라즈마 부하에서도 안정적인 영전압 스위칭 동작을 확인 하였다. 변압기 직렬결합 방식을 사용한 10[kW] 고출력을 통해 $A_r$과 $NF_3$가스 분위기하에서 플라즈마의 밀도와 $NF_3$가스 분해율을 측정하므로서 고주파 전력 변환 장치의 성능을 입증하였다.

• 한국산업보건학회지
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• 제25권4호
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• pp.542-553
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• 2015

Objectives: Many types of dust collector are used for industrial ventilation, with the most common types being the cylinder bag filter system, rectangular bag filter system and cylinder type cartridge filter system. The cylinder type cartridge bag filter, which has more filtering area than other types of bag filter, can increase the pulse time and extend the useful life of the filter. This can save operational costs and installation area. Materials: This study used cylinder type cartridge bag filter equipment and tested the impact of vibration level and filter pressure with different pulse jet cleaning conditions. The final, cleaning efficiency was calculated through input dust mass and cleaning dust mass Conclusions: Two optimum cleaning condition groups were found. The first condition group was $3kgf/cm^2$ pulse pressure, 15 cm pulse distance, 0.2 s pulse time with an H-10 type nozzle. The second condition group was $3kgf/cm^2$ pulse pressure, 15 cm pulse distance, 0.3 s pulse time with an H-10 type nozzle.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.117-119
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• 2002

A semiconductor cleaning technology has been based upon RCA cleaning which consumes vast amounts of chemicals and ultra pure water. This technology hence gives rise to many environmental issues, and some alternatives such as electrolyzed water are being studied. In this work, intentionally contaminated Si wafers were cleaned using the electrolyzed water. The electrolyzed waters were obtained in anode and cathode with oxidation reduction potentials and pH of -1050mV and 4.8, and -750mV and 10.0, respectively. The electrolyzed water deterioration was correlated with $CO_2$ concentration changes dissolved from air. Overflowing of electrolyzed water during cleaning particles resulted in the same cleanness as could be obtained with RCA clean. The roughness of patterned wafer surfaces after EW clean maintained that of as-received wafers. RCA clean consumed about $9\ell$ chemicals, while electrolyzed water clean did only $400m\ell$ HCl or $600m\ell$ $NH_4$Cl to clean 8" wafers in this study. It was hence concluded that electrolyzed water cleaning technology would be very effective for releasing environment, safety, and health(ESH) issues in the next generation semiconductor manufacturing.ring.