Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)
- Volume 13 Issue 10
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- Pages.812-816
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- 2000
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- 1226-7945(pISSN)
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- 2288-3258(eISSN)
Influence of DI Water Pressure and Purified $N_2$ Gas on the Inter Level Dielectric-Chemical Mechanical Polishing Process
탈이온수의 압력과 정제된 $N_2$ 가스가 ILD-CMP 공정에 미치는 영향
Abstract
It is very important to understand the correlation of between inter dielectric(ILD) CMP process and various facility factors supplied to equipment to equipment system. In this paper, the correlation between the various facility factors supplied to CMP equipment system and ILD-CMP process was studied. To prevent the partial over-polishing(edge hot-spot) generated in the wafer edge area during polishing, we analyze various facilities supplied at supply system. With facility shortage of D.I water(DIW) pressure, we introduced an adding purified
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