• Title/Summary/Keyword: Chip inductor

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Design of Step-down DC-DC Converter using Switched-capacitor for Small-sized Electronics Equipment (소형 전자기기를 위한 스위치드 커패시터 방식의 강압형 DC-DC 변환기 설계)

  • Kwon, Bo-Min;Heo, Yun-Seok;Song, Han-Jung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.12
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    • pp.4984-4990
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    • 2010
  • In this paper, a Step-down CMOS DC-DC Converter using low power switched capacitor method is designed in a 0.5 ${\mu}m$ technology for the integration of devices. Conventional DC-DC converter is used inductor that can store energy in a magnetic field but have low efficiency because power consumption is caused by magnetic flux. And there were problems with size, weight and price to integrate chip. In this paper, a proposed Inductorless step-down CMOS DC-DC converter of low power using SC method is designed in a 0.5um technology to solve these problems. Designed DC-DC converter have 96% power efficiency with 200kHz frequency by using cadence simulation.

A Design and Implementation of 4×10 Gb/s Transimpedance Amplifiers (TIA) Array for TWDM-PON (TWDM-PON 응용을 위한 4×10 Gb/s Transimpedance Amplifier 어레이 설계 및 구현)

  • Yang, Choong-Reol;Lee, Kang-Yoon;Lee, Sang-Soo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.39B no.7
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    • pp.440-448
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    • 2014
  • A $4{\times}10$ Gb/s Transimpedance Amplifier (TIA) array is implemented in $0.13{\mu}m$ CMOS process technology, which will be used in the receiver of TWDM-PON system. A technology for bandwidth enhancement of a given $4{\times}10$ Gb/s TIA presented under inductor peaking technology and a single 1.2V power supply based low voltage design technology. It achieves 3 dB bandwidth of 7 GHz in the presence of a 0.5 pF photodiode capacitance. The trans-resistance gain is $50dB{\Omega}$, while 48 mW/ 1channel from a 1.2 V supply. The input sensitivity of the TIA is -27 dBm. The chip size is $1.9mm{\times}2.2mm$.

A Design of PFM/PWM Dual Mode Feedback Based LLC Resonant Converter Controller IC for LED BLU (PFM/PWM 듀얼 모드 피드백 기반 LED BLU 구동용 LLC 공진 변환 제어 IC 설계)

  • Yoo, Chang-Jae;Kim, Hong-Jin;Park, Young-Jun;Lee, Kang-Yoon
    • Journal of IKEEE
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    • v.17 no.3
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    • pp.267-274
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    • 2013
  • This paper presents a design of LLC resonant converter IC for LED backlight unit based on PFM/PWM dual-mode feedback. Dual output LLC resonant architecture with a single inductor is proposed, where the master output is controlled by the PFM and slave output is controlled by the PWM. To regulate the master output PFM is used as feedback to control the frequency of the power switch. On the other hand, PWM feedback is used to control the pulse width of the power switch and to regulate the slave output. This chip is fabricated in 0.35um 2P3M BC(Bipolar-CMOS-DMOS) Process and the die area is $2.3mm{\times}2.2mm$. Current consumptions is 26mA from 5V supply.

Flexible Zeroth-Order Resonant(ZOR) Antenna Independent of Curvature Diameter (곡률에 독립적인 플렉서블 기판 위에 설계된 영차 공진 안테나)

  • Lim, In-Seop;Chung, Tony J.;Lim, Sung-Joon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.1
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    • pp.21-28
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    • 2012
  • In this paper, we propose a flexible zeroth-order resonant(ZOR) antenna. Its zero phase constant ensures that the antenna performance is independent of substrate deformation. A composite right/left-handed transmission line is designed based on coplanar waveguide technology to realize the zeroth-order resonance phenomenon. The CRLH is an implementation of metamaterial(left handed material) which is composed of shunt inductance and series capacitance. In order to yield additional circuital parameter, chip inductor and gap capacitor is added, respectively. The proposed ZOR antenna provides good performances: reasonable bandwidth(6.5 %) and peak gain(0.69~1.39 dBi). Simulated and measured results show that the antenna's resonant frequencies and radiation patterns are almost unchanged at different curvature diameters of 30, 50, 70 mm, as well as for a flat surface.

Effect of Constituent Ration NiO, CuO and B-Bi-Zn Addition on the Permeabilities of Hexagonal-ferrite (NiO, CuO 조성비와 B-Bi-Zn 첨가가 Hexagonal-Ferrite의 투자율에 미치는 영향)

  • Jeong, Seung-U;Kim, Tae-Won;Jeon, Seok-Tae;Myeong, Tae-Ho;Myeong, Tae-Ho
    • Korean Journal of Materials Research
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    • v.10 no.6
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    • pp.430-436
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    • 2000
  • In this paper, we have studied the effect of constituent ratio NiO, CuO and doped with B-Bi-Zn on proper-ties(microstructure, density, shrinkage, permeability as a function of frequency, etc.) of hexagonal-ferrite for high fre- quency chip-inductor material about several GHz. The permeability were analyzed by impedance analyzer(100 kHz∼ 40 MHz) and network analyzed(30 MHz∼3 GHz). As a result of the characteristics. the B-Bi-Zn glass ceramic was used to lower the sintering temperature for additive as function of frequency from 100kHz to 1.8 GHz showed con-stant tends. The maximum imaginary value of complex permeability was observed near the resonance frequency of 2 GHz.

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Characteristics of DGS Transmission Line and Influence of Lumped Elements on DGS (Defected Ground Structure를 갖는 전송선로의 특성과 집중소자에 의한 특성)

  • Kim, Chul-Soo;Sung, Jung-Hyun;Kil, Joon-Bum;Kim, Sang-Hyeok;kim, Ho-Sub;Park, Jun-Seok;Ahn, Dal
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.6
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    • pp.946-951
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    • 2000
  • In this paper, we showed the characteristic of transmission line with DCS (Defected Ground Structure), which is etched on the metallic ground plane. And we extracted the equivalent element value of DGS section. Effects of a lumped element placed on DGS section were investigated by employing DGS of dumbbell shape and parallel resonator with DGS. Chip type resistor, inductor, and capacitor were chosen as lumped elements for experiments. Experimental results show that the Q-factor and resonant frequency of the proposed DGS section can be controlled directly by using the external lumped element.

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A Fully-Integrated DC-DC Buck Converter Using A New Gate Driver (새로운 게이트 드라이버를 이용한 완전 집적화된 DC-DC 벅 컨버터)

  • Ahn, Young-Kook;Jeon, In-Ho;Roh, Jeong-Jin
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.6
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    • pp.1-8
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    • 2012
  • This paper presents a fully-integrated buck converter equipped with packaging inductors. These inductors include parasitic inductances of the bonding wires and lead frames in the package. They have significantly better Q factors than the best on-chip inductors implemented on silicon. This paper also proposes a low-swing gate driver for efficient regulation of high-frequency switching converters. The low-swing driver uses the voltage drop of a diode-connect transistor. The proposed converter is designed and fabricated using a $0.13-{\mu}m$ CMOS process. The fully-integrated buck converter achieves 68.7% and 86.6% efficiency for 3.3 V/2.0 V and 2.8 V/2.3 V conversions, respectively.

The Design and Fabrication of X-Band MMIC Low Noise Amplifier for Active antennal using P-HEMT (P-HEMT를 이용한 능동 안테나용 X-Band MMIC 저잡음 증폭기 설계 및 제작)

  • 강동민;맹성재;김남영;이진희;박병선;윤형섭;박철순;윤경식
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.9 no.4
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    • pp.506-514
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    • 1998
  • The design and fabrication of X-band(11.7~12 GHz) 2-stage monolithic microwave integrated circuit(MMIC) low noise amplifier (LNA) for active antenna are presented using $0.15{\mu}m\times140{\mu}m$ AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (P-HEMT). In each stage of the LNA, a series feedback by using a source inductor is used for both input matching and good stability. The measurement results are achieved as an input return loss under -17 dB, an output return loss under -15dB, a noise figure of 1.3dB, and a gain of 17 dB at X-band. This results almost concur with a design results except noise figure(NF). The chip size of the MMIC LNA is $1.43\times1.27$.

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Low-Power Buck-Boost Converter for Multi-Input Energy Harvesting Systems (다중입력 에너지 하베스팅 시스템을 위한 저전력 벅-부스트 변환기)

  • Jo, Gil-Je;Kwak, Myoung-Jin;Im, Ju-An;Yu, Chong-Gun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2018.10a
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    • pp.31-34
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    • 2018
  • This paper presents a low-power buck-boost converter for multi-input energy harvesting systems. The designed circuit combines the energy harvested from three input channels in real time and stores it in a storage capacitor. The structure of the buck-boost converter is simplified by using one external inductor and applying time division technique using an arbiter. In addition, to improve the efficiency of the system, the controller circuits of the converter are designed so that current consumption is minimized. The proposed circuit is designed with $0.35{\mu}m$ CMOS process. Simulation results show that the designed circuit consumes up to 490nA of current when all three input channels are active, and the maximum power efficiency is 92%. The chip area of the designed circuit is $1310{\mu}m{\times}1100{\mu}m$.

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A Single-Ended Transmitter with Variable Parallel Termination (가변 병렬 터미네이션을 가진 단일 출력 송신단)

  • Kim, Sang-Hun;Uh, Ji-Hun;Jang, Young-Chan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2010.05a
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    • pp.490-492
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    • 2010
  • A swing level controlled voltage-mode transmitter is proposed to support a stub series-terminated logic channel with center-tapped termination. This transmitter provides a swing level control to support the diagnostic mode and improve the signal integrity in the absence of the destination termination. By using the variable parallel termination, the proposed transmitter maintains the constant output impedance of the source termination while the swing level is controlled. Also, the series termination using an external resistor is used to reduce the impedance mismatch effect due to the parasitic components of the capacitor and inductor. To verify the proposed transmitter, the voltage-mode driver, which provides eight swing levels with the constant output impedance of about $50{\Omega}$, was implemented using a 70nm 1-poly 3-metal DRAM process with a 1.5V supply. The jitter reduction of 54% was measured with the swing level controlled voltage-mode driver in the absence of the destination termination at 1.6-Gb/s.

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