The Journal of Korean Institute of Electromagnetic Engineering and Science (한국전자파학회논문지)

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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The Design and Fabrication of X-Band MMIC Low Noise Amplifier for Active antennal using P-HEMT

P-HEMT를 이용한 능동 안테나용 X-Band MMIC 저잡음 증폭기 설계 및 제작

  • Published : 1998.08.01
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Abstract

The design and fabrication of X-band(11.7~12 GHz) 2-stage monolithic microwave integrated circuit(MMIC) low noise amplifier (LNA) for active antenna are presented using $0.15{\mu}m\times140{\mu}m$ AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (P-HEMT). In each stage of the LNA, a series feedback by using a source inductor is used for both input matching and good stability. The measurement results are achieved as an input return loss under -17 dB, an output return loss under -15dB, a noise figure of 1.3dB, and a gain of 17 dB at X-band. This results almost concur with a design results except noise figure(NF). The chip size of the MMIC LNA is $1.43\times1.27$.

능동 안테나용 X-band(11.7~12 GHz)단일 칩 초고주파 집적회로(Monolithic Microwave Integrated Circuits, MMICs) 저잡음 증폭기(Low Noise Amplifier, LNA)를 $0.15{\mu}m\times140{\mu}m$ AlGaAs/InGaAs/GaAs 고속 전자 이동도 트랜지스터(Pseudomorphic-High Electron Mobility Transistor, P-HEMT)를 이용하여 2단으로 설계하고 제작하였다. 증폭기의 안정도 특성을 위해 이득이 다소 감소하나 입력정합이 쉽고 안정도가 좋은 소스 인턱터를 사용하여 저잡음증폭기를 설계하였다. 동작 주파수에서 약 17dB의 이득, 1.3 dB의 잡음 지수 그리고 입.출력 반사손실은 -17~-15dB를 측정 결과로서 얻었다. 이러한 측정 결과는 잡음 지수를 제외하고는 설계 결과와 거의 일치하며, 제작된 MMIC LNA의 칩 크기는 $1.43\tiems1.27mm^2$이다.

Keywords

References

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