• Title/Summary/Keyword: Chip Design

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Design of a LTCC Front End Module with Power Detecting Function (전력 검출 기능을 포함하는 LTCC 프런트 엔드 모듈 설계)

  • Hwang, Mun-Su;Koo, Jae-Jin;Koo, Ja-Kyung;Lim, Jong-Sik;Ahn, Dal;Yang, Gyu-Yeol;Kim, Jun-Chul;Kim, Dong-Su;Park, Ung-Hee
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.8
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    • pp.844-853
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    • 2008
  • This paper describes the design of a FEM(Front End Module) having power detection function for mobile handset application. The designed FEM consists of a MMIC(Monolithic Microwave Integrated Circuits) power amplifier chip, SAW Tx filter and duplexer, diode power detector and stripline matching circuit. An LTCC(Low Temperature Co-fired Ceramics) technology is adopted for miniaturized FEM. The frequency band is $824{\sim}869$ MHz which is the uplink Tx band of the CDMA mobile system. The size of designed FEM is $7.0{\times}5.5{\times}1.5\;mm^3$, which is an ultra-small size even though the power detector circuit is included. All sub-components of FEM have been developed and measured in advance before being integrated into FEM. The measured output power and gain are 27 dBm and 27 dB, respectively. In addition, the measured ACPR characteristics are 46.59 dBc and 55.5 dBc at 885 kHz and 1.98 MHz offset, respectively.

Implementation of the AMBA AXI4 Bus interface for effective data transaction and optimized hardware design (효율적인 데이터 전송과 하드웨어 최적화를 위한 AMBA AXI4 BUS Interface 구현)

  • Kim, Hyeon-Wook;Kim, Geun-Jun;Jo, Gi-Ppeum;Kang, Bong-Soon
    • Journal of the Institute of Convergence Signal Processing
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    • v.15 no.2
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    • pp.70-75
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    • 2014
  • Recently, the demand for high-integrated, low-powered, and high-powered SoC design has been increasing due to the multi-functionality and the miniaturization of digital devices and the high capacity of service informations. With the rapid evolution of the system, the required hardware performances have become diversified, the FPGA system has been increasingly adopted for the rapid verification, and SoC system using the FPGA and the ARM core for control has been growingly chosen. While the AXI bus is used in these kinds of systems in various ways, it is traditionally designed with AXI slave structure. In slave structure, there are problems with the CPU resources because CPU is continually involved in the data transfer and can't be used in other jobs, and with the decreased transmission efficiency because the time not used of AXI bus beomes longer. In this paper, an efficient AXI master interface is proposed to solve this problem. The simulation results show that the proposed system achieves reductions in the consumption clock by an average of 51.99% and in the slice by 31% and that the maximum operating frequency is increased to 107.84MHz by about 140%.

Design of a Holter Monitoring System with Flash Memory Card (플레쉬 메모리 카드를 이용한 홀터 심전계의 설계)

  • 송근국;이경중
    • Journal of Biomedical Engineering Research
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    • v.19 no.3
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    • pp.251-260
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    • 1998
  • The Holter monitoring system is a widely used noninvasive diagnostic tool for ambulatory patient who may be at risk from latent life-threatening cardiac abnormalities. In this paper, we design a high performance intelligent holter monitoring system which is characterized by the small-sized and the low-power consumption. The system hardware consists of one-chip microcontroller(68HC11E9), ECG preprocessing circuit, and flash memory card. ECG preprocessing circuit is made of ECG preamplifier with gain of 250, 500 and 1000, the bandpass filter with bandwidth of 0.05-100Hz, the auto-balancing circuit and the saturation-calibrating circuit to eliminate baseline wandering, ECG signal sampled at 240 samples/sec is converted to the digital signal. We use a linear recursive filter and preprocessing algorithm to detect the ECG parameters which are QRS complex, and Q-R-T points, ST-level, HR, QT interval. The long-term acquired ECG signals and diagnostic parameters are compressed by the MFan(Modified Fan) and the delta modulation method. To easily interface with the PC based analyzer program which is operated in DOS and Windows, the compressed data, that are compatible to FFS(flash file system) format, are stored at the flash memory card with SBF(symmetric block format).

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Design of 77 GHz Automotive Radar System (77 GHz 차량용 레이더 시스템 설계)

  • Nam, Hyeong-Ki;Kang, Hyun-Sang;Song, Ui-Jong;Cui, Chenglin;Kim, Seong-Kyun;Nam, Sang-Wook;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.9
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    • pp.936-943
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    • 2013
  • This work presents the design and measured results of the single channel automotive radar system for 76.5~77 GHz long range FMCW radar applications. The transmitter uses a commercial GaAs monolithic microwave integrated circuit(MMIC) and the receiver uses the down converter designed using 65 nm CMOS process. The output power of the transmitter is 10 dBm. The down converter chip can operate at low LO power as -8 dBm which is easily supplied from the transmitter output using a coupled line coupler. All MMICs are mounted on an aluminum jig which embeds the WR-10 waveguide. A microstrip to waveguide transition is designed to feed the embedded waveguide and finally high gain horn antennas. The overall size of the fabricated radar system is $80mm{\times}61mm{\times}21mm$. The radar system achieved an output power of 10 dBm, phase noise of -94 dBc/Hz at 1 MHz offset and a conversion gain of 12 dB.

Design of Q-Band LC VCO and Injection Locking Buffer 77 GHz Automotive Radar Sensor (77 GHz 자동차용 레이더 센서 응용을 위한 Q-밴드 LC 전압 제어 발진기와 주입 잠금 버퍼 설계)

  • Choi, Kyu-Jin;Song, Jae-Hoon;Kim, Seong-Kyun;Cui, Chenglin;Nam, Sang-Wook;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.3
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    • pp.399-405
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    • 2011
  • In this paper, we present the design of Q-band LC VCO and injection locking buffer for 77 GHz automotive radar sensor using 130 nm RF CMOS process. To improve the phase noise characteristic of LC tank, the transmission line is used. The negative resistance by the active device cross-coupled pair of buffer is used for high output power, with or without oscillation of buffer. The measured phase noise is -102 dBc/Hz at 1 MHz offset frequency and tuning range is 34.53~35.07 GHz. The output power is higher than 4.1 dBm over entire tuning range. The fabricated chip size is $510{\times}130\;um^2$. The power consumption of LC VCO is 10.8 mW and injection locking buffer is 50.4 mW from 1.2 V supply.

Design of a Dual-Band GPS Array Antenna (이중 대역 GPS 배열 안테나 설계)

  • Kim, Heeyoung;Byun, Gangil;Son, Seok Bo;Choo, Hosung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.7
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    • pp.678-685
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    • 2013
  • In this paper, we propose a design of dual-band patch antennas for Global Positioning System(GPS) applications, and the designed antenna is used as an individual element of GPS arrays. A low distortion and a high isolation of the array are achieved by adjusting rotating angles of each array element. The antenna consists of two radiating patches that operate in the GPS $L_1$ and $L_2$ bands, and the two ports feeding network with a hybrid chip coupler is adopted to achieve a broad circular polarization(CP) bandwidth. The rotating angles of each antenna element are varied with four directions(${\phi}=0^{\circ}$, ${\phi}=90^{\circ}$, ${\phi}=180^{\circ}$, ${\phi}=270^{\circ}$) in order to minimize the pattern distortion and maximize the isolation among array elements. The measurement shows bore-sight gains of 0.3 dBic($L_1$) and -1.0 dBic($L_2$) for the center element. Bore-sight gains of 1.6 dBic($L_1$) and 1.0 dBic($L_2$) are observed for the edge element. This results demonstrate that the proposed antenna is suitable for GPS array applications.

Design of a 48MHz~1675MHz Frequency Synthesizer for DTV Tuners (DTV 튜너를 위한 48MHz~1675MHz 주파수합성기 설계)

  • Ko, Seung-O;Seo, Hee-Teak;Kwon, Duck-Ki;Yu, Chong-Gun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.15 no.5
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    • pp.1125-1134
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    • 2011
  • In this paper a wideband frequency synthesizer is designed for DTV tuners using a $0.18{\mu}m$ CMOS process. It satisfies the DTV frequency band(48~1675MHz). A scheme is proposed to cover the full band using only one VCO and reliable broadband characteristics are achieved by reducing the variations of VCO gains and frequency steps. The simulation results show that the designed VCO has frequency range of 1.85~4.22GHz, phase noise at 4.22GHz of -89.7dBc/Hz@100kHz, gains of 62.4~95.8MHz/V(${\pm}21.0%$) and frequency steps of 22.9~47.9MHz(${\pm}35.3%$). The designed VCO has a phase noise of -89.75dBc/Hz at 100kHz offset. The designed synthesizer has a lock time less than $0.15{\mu}s$. The measured VCO tuning range is 2.05~3.4GHz. The frequency range is shifted down but still satisfy the target range owing to the design for enough margin. The designed circuit consumes 23~27mA from a 1.8V supply, and the chip size including PADs is $2.0mm{\times}1.5mm$.

Design of logic process based 256-bit EEPROM IP for RFID Tag Chips and Its Measurements (RFID 태그 칩용 로직 공정 기반 256bit EEPROM IP 설계 및 측정)

  • Kim, Kwang-Il;Jin, Li-Yan;Jeon, Hwang-Gon;Kim, Ki-Jong;Lee, Jae-Hyung;Kim, Tae-Hoon;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.8
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    • pp.1868-1876
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    • 2010
  • In this paper, we design a 256-bit EEPROM IP using only logic process-based devices. We propose EEPROM core circuits, a control gate (CG) and a tunnel gate (TG) driving circuit, to limit the voltages between the devices within 5.5V; and we propose DC-DC converters : VPP (=+4.75V), VNN (-4.75V), and VNNL (=VNN/3) generation circuit. In addition, we propose switching powers, CG_HV, CG_LV, TG_HV, TG_LV, VNNL_CG, VNNL_TG switching circuit, to be supplied for the CG and TG driving circuit. Simulation results under the typical simulation condition show that the power consumptions in the read, erase, and program mode are $12.86{\mu}W$, $22.52{\mu}W$, and $22.58{\mu}W$ respectively. Furthermore, the manufactured test chip operated normally and generated its target voltages of VPP, VNN, and VNNL as 4.69V, -4.74V, and -1.89V.

A design on low-power and small-area EEPROM for UHF RFID tag chips (UHF RFID 태그 칩용 저전력, 저면적 비동기식 EEPROM 설계)

  • Baek, Seung-Myun;Lee, Jae-Hyung;Song, Sung-Young;Kim, Jong-Hee;Park, Mu-Hun;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.12
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    • pp.2366-2373
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    • 2007
  • In this paper, a low-power and small-area asynchronous 1 kilobit EEPROM for passive UHF RFID tag chips is designed with $0.18{\mu}m$ EEPROM cells. As small area solutions, command and address buffers are removed since we design asynchronous I/O interface and data output buffer is also removed by using separate I/O. To supply stably high voltages VPP and VPPL used in the cell array from low voltage VDD, Dickson charge pump is designed with schottky diodes instead of a PN junction diodes. On that account, we can decrease the number of stages of the charge pump, which can decrease layout area of charge pump. As a low-power solution, we can reduce write current by using the proposed VPPL power switching circuit which selects each needed voltage at either program or write mode. A test chip of asynchronous 1 kilobit EEPROM is fabricated, and its layout area is $554.8{\times}306.9{\mu}m2$., 11% smaller than its synchronous counterpart.

Design of Zero-Layer FTP Memory IP (PMIC용 Zero Layer FTP Memory IP 설계)

  • Ha, Yoongyu;Jin, Hongzhou;Ha, Panbong;Kim, Younghee
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.11 no.6
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    • pp.742-750
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    • 2018
  • In this paper, in order to enable zero-layer FTP cell using only 5V MOS devices on the basis of $0.13{\mu}m$ BCD process, the tunnel oxide thickness is used as the gate oxide thickness of $125{\AA}$ of the 5V MOS device at 82A. The HDNW layer, which is the default in the BCD process, is used. Thus, the proposed zero layer FTP cell does not require the addition of tunnel oxide and DNW mask. Also, from the viewpoint of memory IP design, a single memory structure which is used only for trimming analog circuit of PMIC chip is used instead of the dual memory structure dividing into designer memory area and user memory area. The start-up circuit of the BGR (Bandgap Reference Voltage) generator circuit is designed to operate in the voltage range of 1.8V to 5.5V. On the other hand, when the 64-bit FTP memory IP is powered on, the internal read signal is designed to maintain the initial read data at 00H. The layout size of the 64-bit FTP IP designed using the $0.13-{\mu}m$ Magnachip process .is $485.21{\mu}m{\times}440.665{\mu}m$($=0.214mm^2$).