• 월간산업보건
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• s.8
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• pp.4-30
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• 1988

Examination of working environments was conducted to get more detailed data about harmful working environments and to make a contribution to more effective management. Study was carried out on 722 factories located in Taegu city and eight counties in Kyungpook Province, Korea, for a period of one year, from February 1 to December 30, 1986. The total number and proportion of workers exposed to harmful material was 37,697, 45.2% among 83,368 workers. The results according to exposed material were as follows: 1. In the case of noise, proportion of exceeding the 8-hour TLV was 59%, Included were nail-cutting in assembly metal manufacturing industry and weaving process in textile. 2. Dust in mill process of coal manufacturing industries exceeded the TLV of second class of dust at all parts and exceeded the TLV at 6% as a whole.: 3. The fields of industry lower than 70 lux of illumination were storage equipment of food, auto-winder of textile, painting of wood wares and coal mixing, and 44% of all cases was lower than standard. 4. As a result of temperature index investigation(WBGT), about 12% of all sujects exceeded limit value. Included parts were rolling machine and reducing room. 5. In the case of organic solvents, TLV was exceeded at about 8%, The parts exceeded TLV according to materials belonged to this category were as follows. 1) Toluene: adhesive work in assembly metal manufacturing 2) Xylene: printing and paint mixing in chemical manufacturing 3) Methyl ethytl ketone: paint mixing in all parts examined and coating machine partially in chemical manufacturing 4) Methyl isobutyl ketone: printing in chemical manufacturing 5) Acetone: vapor polishing in assembly metal manufacturing 6. Among specified chemical materials, the concentration of HC1 in the air in metal assembly manufacturing factory exceeded TLV. in one of three assembly metal manufacturing examined. Others, such as benzene, acetic acid, formic acid, sodium hydroxide, formalin, ammonia, copper, chromate etc. were lower than TLV in its indoor atmospheric concentration. As a whole, the proportion of exceeding TLV was about 0.8% 7. The concentrations of inorganic lead were lower than TLV in all parts examined. The results of this investigation show the fact that current management of working environments is not satisfactory, and so more active management is needed.

• Progress in Superconductivity
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• v.12 no.2
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• pp.118-123
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• 2011

The properties of $2^{nd}$ generation high temperature superconducting wire, coated conductor strongly depend on the quality of superconducting oxide layer and property of metal substrate is one of the most important factors affecting the quality of coated conductor. Good mechanical and chemical stability at high temperature are required to maintain the initial integrity during the various process steps required to deposit several layers consisting coated conductor. And substrate need to be nonmagnetic to reduce magnetization loss for ac application. Hastelloy and stainless steel are the most suitable alloys for metal substrate. One of the obstacles in using stainless steel as substrate for coated conductor is its difficulties in making smooth surface inevitable for depositing good IBAD layer. Conventional method involves several steps such as electro polishing, deposition of $Al_2O_3$ and $Y_2O_3$ before IBAD process. Chemical solution deposition method can simplify those steps into one step process having uniformity in large area. In this research, we tried to improve the surface roughness of stainless steel(SUS310). The precursor coating solution was synthesized by using yttrium complex. The viscosity of coating solution and heat treatment condition were optimized for smooth surface. A smooth amorphous $Y_2O_3$ thin film suitable for IBAD process was coated on SUS310 tape. The surface roughness was improved from 40nm to 1.8 nm by 4 coatings. The IBAD-MgO layer deposited on prepared substrate showed good in plane alignment(${\Delta}{\phi}$) of $6.2^{\circ}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.375-375
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• 2010

CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.

• Journal of Conservation Science
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• v.36 no.5
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• pp.405-420
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• 2020

A convergence research was conducted on glass beads excavated at the ruins of Hapgang-ri, Sejong, using the archeology and conservation approach. The period of appearance of Jugu Towangmyo in the ruins of Hapgang-ri can be estimated to begin in the late 2^nd century; for Jugu Towangmyo No. 15, the period spans from the late 2^nd to early 3^rd century. Form, color, and manufacturing techniques of complete glass beads were examined, and the cross-sections and chemical composition of 16 samples were observed. Based on these analyses, the glass beads were divided into blue, purple, and red colors. The blue-colored beads could be further sub-divided based on their gloss and brightness; in contrast, the red-colored beads were highly uniform with regard to these parameters. Based on the stripe and bubble arrangement on the surface of the glass beads, their drawing technique was identified. Traces of heat treatment or polishing were observed at the ends of the beads. According to their chemical composition, the 16 samples were classified into 3 potash glass and 13 soda glass groups; in the latter, the properties of the stabilizers were divided according to the blue and red bead colors. The stabilizers of the red beads are unique in that they allow the distinction among beads excavated in other areas in South Korea owing to their compositional differences. Colorants in blue- and red-colored beads are cobalt (containing MnO), and copper and iron, respectively.

• Korean Journal of Optics and Photonics
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• v.33 no.2
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• pp.74-83
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• 2022

The entire process, from the raw material to the final system qualification test, has been developed to fabricate a large-diameter, lightweight reflective-telescope system for a satellite observation. The telescope with 3 anastigmatic mirrors has an aperture of 700 mm and a total mass of 66 kg. We baked a silicon carbide substrate body from a carbon preform using a reaction sintering method, and tested the structural and chemical properties, surface conditions, and crystal structure of the body. We developed the polishing and coating methods considering the mechanical and chemical properties of the silicon carbide (SiC) body, and we utilized a chemical-vapor-deposition method to deposit a dense SiC thin film more than 170 ㎛ thick on the mirror's surface, to preserve a highly reflective surface with excellent optical performance. After we made the SiC mirrors, we measured the wave-front error for various optical fields by assembling and aligning three mirrors and support structures. We conducted major space-environment tests for the components and final assembly by temperature-cycling tests and vibration-shock tests, in accordance with the qualifications for the space and launch environment. We confirmed that the final telescope achieves all of the target performance criteria.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.9
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• pp.20-25
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• 1998

Cu removal rates for various SiO$_2$ trench pitch sizes and densities and AFM images of surface profiles after global planarization using Cu CMP technology are investigated. In the experimental results, Cu removal rates are increasing as the pattern densities and pattern pitches are getting high and low, respectively, and then decreasing after local planarization. The rms roughness after global planarization are about 120$\AA$. AFM images with a 50% pattern density for 1${\mu}{\textrm}{m}$ and 2${\mu}{\textrm}{m}$ pitches show that thicknesses of 120~330$\AA$ Cu interconnects have been peeled off and oxide erosion of Cu/Sio$_2$ sidewall is observed. However, AFM images with a 50% pattern density for 10${\mu}{\textrm}{m}$ and 15${\mu}{\textrm}{m}$ pitches show that 260~340$\AA$ thick Cu interconnects have been trenched at the boundaries of Cu/Sio$_2$ sidewall.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.37-41
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• 2012

The wafer level stacking with Cu-to-Cu bonding becomes an important technology for high density DRAM stacking, high performance logic stacking, or heterogeneous chip stacking. Cu CMP becomes one of key processes to be developed for optimized Cu bonding process. For the ultra low-k dielectrics used in the advanced logic applications, Ti barrier has been preferred due to its good compatibility with porous ultra low-K dielectrics. But since Ti is electrochemically reactive to Cu CMP slurries, it leads to a new challenge to Cu CMP. In this study Ti barrier/Cu interconnection structure has been investigated for the wafer level 3D integration. Cu CMP wafers have been fabricated by a damascene process and two types of slurry were compared. The slurry selectivity to $SiO_2$ and Ti and removal rate were measured. The effect of metal line width and metal density were evaluated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.1
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• pp.1-7
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• 2016

RE : YAG ($RE=Nd^{3+}$, $Er^{3+}$) single crystals are laser diodes and generally grown by Czochralski method with controlling the various growth parameter. Since the defects occurred by temperature gradient or the rotation speed of solid-liquid growth interface act as the decline of crystal optical property during the growth procedure, crystalline quality improvement via defects analysis is necessary. The etch pit density (EPD) analysis was used to confirm the surface defect of grown RE : YAG single crystal and to select the area of transmission electron microscopy (TEM) analysis. Defects in the specimen produced by tripod polishing method such as buckling, rod shaped, bend contours by internal stress, segregation and others were observed by using 200 kV TEM and 300 kV FE-TEM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.462-462
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• 2009

$CeO_2$는 고체 산화물 연료전지 (SOFC, soild oxide fuel cell)의 전해질 재료와 CMP(Chemical Mechanical Polishing) 슬러리 재료, 자동차의 3원 촉매, gas sensor, UV absorbent등 여러 분야에서 사용되고 있다. 본 연구에서는 위의 활용범위 외에 $CeO_2$의 구조적 안정성과 빠른 $Ce^{3+}/Ce^{4+}$의 전환 특성을 이용하여 lithium ion battery의 anode 재료로서 전기화학적 특성을 알아보고자 실험을 실시하였다. $CeO_2$ 합성에 사용되는 전구체인 cerium carbonate의 형상 및 크기, 비표면적과 같은 물리화학적 특성이 $CeO_2$ 분말의 특성에 직접적인 영향을 주기 때문에 전구체의 합성 단계에서 입자의 특성을 조절하였다. 전구체 합성의 출발원료로 cerium nitrate hexahydrate 와 ammonium carbonate를 사용하였고 반응온도 및 농도 등을 변화시켜 입자의 형상 및 결정상을 fiber형태의 orthorombic $Ce_2O(CO_3)_2{\cdot}H_2O$와 구형의 hexagonal $CeCO_3OH$의 세리아 전구체를 합성하였다. 이를 $300^{\circ}C$에서 30분 동안 하소하여 전구체의 입자형상을 유지하는 cubic $CeO_2$를 합성하고 X-ray diffraction, FE-SEM, micropore physisorption analyzer 분석을 통하여 입자의 결정상과 형상, 비표면적 등을 비교 분석하고 $Li/CeO_2$ couple의 충,방전 용량과 수명특성을 비교 분석하여 $CeO_2$의 전기화학적 특성을 알아보았다.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.47-51
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• 2013

Chemical mechanical polishing (CMP) has become one of the key processes in wafer level stacking technology for 3D stacked IC. In this study, two-step CMP process was proposed to polish $Cu/SiO_2$ hybrid bonding surface, that is, Cu CMP was followed by $SiO_2$ CMP to minimize Cu dishing. As a result, Cu dishing was reduced down to $100{\sim}200{\AA}$ after $SiO_2$ CMP and surface roughness was also improved. The bonding interface showed no noticeable dishing or interface line, implying high bonding strength.