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http://dx.doi.org/10.6111/JKCGCT.2016.26.1.001

Defects analysis of RE : YAG (RE = Nd3+, Er3+) single crystal synthesized by Czochralski method  

Park, Cheong Ho (Div. of Materials Engineering & Convergence Technology, Gyeongsang National Univ.)
Joo, Young Jun (Div. of Materials Engineering & Convergence Technology, Gyeongsang National Univ.)
Kim, Hye Young (Dept. of Nano & Advanced Materials Engineering, Gyeongsang National Univ.)
Shim, Jang Bo (Thin Film Materials Research Center, Korea Research Institute of Chemical Technology)
Kim, Cheol Jin (Research Institute of Green Energy Convergence Technology, Gyeongsang National Univ.)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.26, no.1, 2016 , pp. 1-7 More about this Journal
Abstract
RE : YAG ($RE=Nd^{3+}$, $Er^{3+}$) single crystals are laser diodes and generally grown by Czochralski method with controlling the various growth parameter. Since the defects occurred by temperature gradient or the rotation speed of solid-liquid growth interface act as the decline of crystal optical property during the growth procedure, crystalline quality improvement via defects analysis is necessary. The etch pit density (EPD) analysis was used to confirm the surface defect of grown RE : YAG single crystal and to select the area of transmission electron microscopy (TEM) analysis. Defects in the specimen produced by tripod polishing method such as buckling, rod shaped, bend contours by internal stress, segregation and others were observed by using 200 kV TEM and 300 kV FE-TEM.
Keywords
Czochralski; YAG; Nd; Er; TEM; Defect;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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