• Journal of the Korean Society for Precision Engineering
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• v.19 no.8
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• pp.134-140
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• 2002

Chemical mechanical polishing of aluminum and photoresist using colloidal silica-based slurry was experimented. The effects of slurry pH, silica concentration, and oxidizer ($H_2O_2$) concentration on surface roughness and removal rate were studied. The optimum slurry conditions for reduction of micro-scratch were investigated. The optimum chemical mechanical polishing with the colloidal silica-based slurry was compared with conventional chemical mechanical polishing with alumina-based slurry. Chemical mechanical polishing of the aluminum with the colloidal silica-based slurry showed improved result but chemical mechanical polishing of the photoresist did not. The improved result was comparative with that of chemical mechanical polishing with filtered alumina-based slurry which one of desirable methods to reduce the micro-scratch.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.3
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• pp.184-191
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• 2000

Properties of pad are investigated to find the relationship between the chemical mechanical polishing(CMP) results, such as material removal rate and within wafer non-uniformity(WIWNU), and its properties. Polishing pressure is considered as important factors to affect the results, so behavior of ordinary polymer is studied to define the polishing result affecting properties of pad. Experimental setup is devised to identify the behavior of pad and several different pads are used in chemical mechanical polishing experiments to verify the correlations between pad properties and polishing results. The results indicate that the viscoelastic properties of pad had relationships with the polishing results, and shows correlation between suggested properties of pad and polishing result.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.414-422
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• 2005

This paper shows the results of atomistic modeling for the Interaction between spherical nano abrasive and substrate In chemical mechanical polishing processes. Atomistic modeling was achieved from 2-dimensional molecular dynamics simulations using the Lennard-jones 12-6 potentials. We proposed and investigated three mechanical models: (1) Constant Force Model; (2) Constant Depth Model, (3) Variable Force Model, and three chemical models, such as (1) Chemically Reactive Surface Model, (2) Chemically Passivating Surface Model, and (3) Chemically Passivating-reactive Surface Model. From the results obtained from classical molecular dynamics simulations for these models, we concluded that atomistic chemical mechanical polishing model based on both Variable Force Model and Chemically Passivating-reactive Surface Model were the most suitable for realistic simulation of chemical mechanical polishing in the atomic scale. The proposed model can be extended to investigate the 3-dimensional chemical mechanical polishing processes in the atomic scale.

• Tribology and Lubricants
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• v.38 no.1
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• pp.1-7
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• 2022

Chemical-mechanical polishing (CMP) process is a semiconductor process that planarizes a wafer surface using mechanical friction between a polishing pad and a substrate surface during a specific chemical reaction. During the CMP process, polishing pad conditioning is applied to prevent the rapid degradation of the polishing quality caused by polishing pad glazing through repeated material removal processes. However, during the conditioning process, uneven wear on the polishing pad is inevitable because the disk on which diamond particles are electrodeposited is used. Therefore, the abrasion of the polishing pad should be considered not only for the variables during the conditioning process but also when designing the CMP conditioning system. In this study, three design variables of the conditioning system were analyzed, and the effect on the pad wear profile during conditioning was investigated. The three design variables considered in this study were the length of the conditioner arm, diameter of the conditioner disk, and distance between centers. The Taguchi method was used for the experimental design. The effect of the three design variables on pad wear and uniformity was assessed, and new variables used in conditioning system design were proposed.

• Tribology and Lubricants
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• v.33 no.3
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• pp.106-111
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• 2017

Sapphire is an anisotropic material with excellent physical and chemical properties and is used as a substrate material in various fields such as LED (light emitting diode), power semiconductor, superconductor, sensor, and optical devices. Sapphire is processed into the final substrate through multi-wire saw, double-side lapping, heat treatment, diamond mechanical polishing, and chemical mechanical polishing. Among these, chemical mechanical polishing is the key process that determines the final surface quality of the substrate. Recent studies have reported that the material removal characteristics during chemical mechanical polishing changes according to the crystal orientations, however, detailed analysis of this phenomenon has not reported. In this work, we carried out chemical mechanical polishing of C(0001), R($1{\bar{1}}02$), and A($11{\bar{2}}0$) substrates with different sapphire crystal planes, and analyzed the effect of crystal orientation on the material removal characteristics and their correlations. We measured the material removal rate and frictional force to determine the material removal phenomenon, and performed nano-indentation to evaluate the material characteristics before and after the reaction. Our findings show that the material removal rate and frictional force depend on the crystal orientation, and the chemical reaction between the sapphire substrate and the slurry accelerates the material removal rate during chemical mechanical polishing.

• Tribology and Lubricants
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• v.34 no.3
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• pp.115-122
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• 2018

Chemical mechanical polishing (CMP) is a hybrid processing method in which the surface of a wafer is planarized by chemical and mechanical material removal. Since mechanical material removal in CMP is caused by the rolling or sliding of abrasive particles, interfacial friction during processing greatly influences the CMP results. In this paper, the trend of tribology research on CMP process is discussed. First, various friction force monitoring methods are introduced, and three elements in the CMP tribo-system are defined based on the material removal mechanism of the CMP process. Tribological studies on the CMP process include studies of interfacial friction due to changes in consumables such as slurry and polishing pad, modeling of material removal rate using contact mechanics, and stick-slip friction and scratches. The real area of contact (RCA) between the polishing pad and wafer also has a significant influence on the polishing result in the CMP process, and many researchers have studied RCA control and prediction. Despite the fact that the CMP process is a hybrid process using chemical reactions and mechanical material removal, tribological studies to date have yet to clarify the effects of chemical reactions on interfacial friction. In addition, it is necessary to clarify the relationship between the interface friction phenomenon and physical surface defects in CMP, and the cause of their occurrence.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.435-437
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• 2002

Polishing of copper, a process called copper chemical mechanical polishing, is a critical, intermediate step in the planarization of silicon wafers. During polishing, the electrodeposited copper films are removed by slurries: and the differential polishing rates between copper and the surrounding silicon dioxide leads to a greater removal of the copper. The differential polishing develops dimples and furrows; and the process is called dishing and erosion. In this work, we present the results of experiments on dishing and erosion of copper-CMP, using patterned silicon wafers. Results are analyzed for the pattern factors and properties of the copper layers. Three types of pads - plain, perforated, and grooved - were used for polishing. The effect of slurry chemistries and pad soaking is also reported.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.1
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• pp.7-12
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• 2012

Chemical mechanical polishing(CMP) technology is faced with the challenge of processing new electronic materials. This paper focuses on the balance between chemical and mechanical reactions in the CMP process that is required to cope with a variety of electronic materials. The material properties were classified into the following categories: easy to abrade(ETA), difficult to abrade(DTA), easy to react(ETR) and difficult to react(DTR). The chemical and mechanical balance for the representative ETA-ETR, DTA-ETR, ETA-DTR and DTA-DTR materials was considered for defect-free surfaces. This paper suggests the suitable polishing methods and examples for each electronic material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.651-652
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• 2005

Chemical mechanical polishing (CMP) has emerged as the planarization technique of choice in integrated circuit manufacturing. Especially, polishing pad is considered as one of the most important consumables because of its properties. Generally, conventional polishing pad has irregular pores and asperities. If conditioning process is except from whole polishing process, smoothing of asperities and pore glazing occur on the surface of the pad, so repeatability of polishing performances cannot be expected. In this paper, CMP pad with microstructure was made using micro-molding technology and repeatability of ILD(interlayer dielectric) CMP performances and was evaluated.

• Tribology and Lubricants
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• v.38 no.6
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• pp.247-254
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• 2022

Chemical mechanical polishing (CMP) is a hybrid surface-polishing process that utilizes both mechanical and chemical energy. However, the recently emerging semiconductor substrate and thin film materials are challenging to process using the existing CMP. Therefore, previous researchers have conducted studies to increase the material removal rate (MRR) of CMP. Most materials studied to improve MRR have high hardness and chemical stability. Methods for enhancing the material removal efficiency of CMP include additional provision of electric, thermal, light, mechanical, and chemical energies. This study aims to introduce research trends on CMP using ultraviolet (UV) light to these methods to improve the material removal efficiency of CMP. This method, photocatalysis-assisted chemical mechanical polishing (PCMP), utilizes photocatalytic oxidation using UV light. In this study, the target materials of the PCMP application include SiC, GaN, GaAs, and Ru. This study explains the photocatalytic reaction, which is the basic principle of PCMP, and reviews studies on PCMP according to materials. Additionally, the researchers classified the PCMP system used in existing studies and presented the course for further investigation of PCMP. This study aims to aid in understanding PCMP and set the direction of future research. Lastly, since there have not been many studies on the tribology characteristics in PCMP, research on this is expected to be required.