Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference (한국윤활학회:학술대회논문집)
- 2002.10b
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- Pages.435-437
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- 2002
Dishing and Erosion in Chemical Mechanical Polishing of Electroplated Copper
- Yoon, In-Ho (The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology) ;
- Ng, Sum Huan (The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology) ;
- Hight, Robert (The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology) ;
- Zhou, Chunhong (The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology) ;
- Higgs III, C. Fred (The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology) ;
- Yao, Lily (The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology) ;
- Danyluk, Steven (The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology)
- Published : 2002.10.21
Abstract
Polishing of copper, a process called copper chemical mechanical polishing, is a critical, intermediate step in the planarization of silicon wafers. During polishing, the electrodeposited copper films are removed by slurries: and the differential polishing rates between copper and the surrounding silicon dioxide leads to a greater removal of the copper. The differential polishing develops dimples and furrows; and the process is called dishing and erosion. In this work, we present the results of experiments on dishing and erosion of copper-CMP, using patterned silicon wafers. Results are analyzed for the pattern factors and properties of the copper layers. Three types of pads - plain, perforated, and grooved - were used for polishing. The effect of slurry chemistries and pad soaking is also reported.