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http://dx.doi.org/10.4313/JKEM.2005.18.5.414

Atomic Scale Modeling of Chemical Mechanical Polishing Process  

Byun, Ki-Ryang (중앙대학교 전자전기공학부)
Kang, Jeong-Won (중앙대학교 전자전기공학부)
Song, Ki-Oh (중앙대학교 전자전기공학부)
Hwang, Ho-Jung (중앙대학교 전자전기공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.5, 2005 , pp. 414-422 More about this Journal
Abstract
This paper shows the results of atomistic modeling for the Interaction between spherical nano abrasive and substrate In chemical mechanical polishing processes. Atomistic modeling was achieved from 2-dimensional molecular dynamics simulations using the Lennard-jones 12-6 potentials. We proposed and investigated three mechanical models: (1) Constant Force Model; (2) Constant Depth Model, (3) Variable Force Model, and three chemical models, such as (1) Chemically Reactive Surface Model, (2) Chemically Passivating Surface Model, and (3) Chemically Passivating-reactive Surface Model. From the results obtained from classical molecular dynamics simulations for these models, we concluded that atomistic chemical mechanical polishing model based on both Variable Force Model and Chemically Passivating-reactive Surface Model were the most suitable for realistic simulation of chemical mechanical polishing in the atomic scale. The proposed model can be extended to investigate the 3-dimensional chemical mechanical polishing processes in the atomic scale.
Keywords
Chemical mechanical poilshlng(CMP); Molecular dynamics simulations; Modeling and simulation;
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