Study on Chemical Mechanical Polishing for Reduction of Micro-Scratch

화학기계적연마 공정에서 미소 스크래치 저발생화를 위한 가공기술 연구

  • Kim, Seong-Jun (Dept. of Precision Mechanical Engineering, Hanyang University) ;
  • An, Yu-Min (Dept. of Mechanical Engineering, Hanyang University) ;
  • Baek, Chang-Uk (Dept.of Electric Computer Engineering, Seoul National University) ;
  • Kim, Yong-Gwon (Dept.of Electric Computer Engineering, Seoul National University)
  • 김성준 (한양대학교 대학원 정밀기계공학과) ;
  • 안유민 (한양대학교 기계공학과) ;
  • 백창욱 (서울대학교 전기컴퓨터공학부) ;
  • 김용권 (서울대학교 전기컴퓨터공학부)
  • Published : 2002.08.01

Abstract

Chemical mechanical polishing of aluminum and photoresist using colloidal silica-based slurry was experimented. The effects of slurry pH, silica concentration, and oxidizer ($H_2O_2$) concentration on surface roughness and removal rate were studied. The optimum slurry conditions for reduction of micro-scratch were investigated. The optimum chemical mechanical polishing with the colloidal silica-based slurry was compared with conventional chemical mechanical polishing with alumina-based slurry. Chemical mechanical polishing of the aluminum with the colloidal silica-based slurry showed improved result but chemical mechanical polishing of the photoresist did not. The improved result was comparative with that of chemical mechanical polishing with filtered alumina-based slurry which one of desirable methods to reduce the micro-scratch.

Keywords

References

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