• 제목/요약/키워드: Charge migration

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Tapering과 Ferroelectric Polarization에 의한 3D NAND Flash Memory의 Lateral Charge Migration 분석 (The Analysis of Lateral Charge Migration at 3D-NAND Flash Memory by Tapering and Ferroelectric Polarization)

  • 이재우;이종원;강명곤
    • 전기전자학회논문지
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    • 제25권4호
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    • pp.770-773
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    • 2021
  • 본 논문에서는 tapering과 ferroelectric(HfO2)구조가 적용된 3D NAND flash memory의 프로그램 이후 시간경과에 따른 retention특징을 분석했다. Nitride에 trap된 전자는 시간이 지남에 따라 lateral charge migration이 발생한다. 프로그램 이후 시간이 지남에 따라 trap된 전자가 tapering에 의해 두꺼워진 채널 쪽으로 lateral charge migration이 더 많이 발생하는 것을 확인했다. 또한 Oxide-Nitride-Ferroelectric (ONF) 구조는 polarization에 의해 lateral charge migration이 완화되기 때문에 기존 Oxide-Nitride-Oxide (ONO) 구조 보다 문턱전압(Vth)의 변화량이 줄어든다.

SONOS NAND 플래시 메모리 소자에서의 Lateral Charge Migration에 의한 소자 안정성 연구 (Reliability Analysis by Lateral Charge Migration in Charge Trapping Layer of SONOS NAND Flash Memory Devices)

  • 성재영;정준교;이가원
    • 반도체디스플레이기술학회지
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    • 제18권4호
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    • pp.138-142
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    • 2019
  • As the NAND flash memory goes to 3D vertical Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) structure, the lateral charge migration can be critical in the reliability performance. Even more, with miniaturization of flash memory cell device, just a little movement of trapped charge can cause reliability problems. In this paper, we propose a method of predicting the trapped charge profile in the retention mode. Charge diffusivity in the charge trapping layer (Si3N4) was extracted experimentally, and the effect on the trapped charge profile was demonstrated by the simulation and experiment.

3차원 플래시 메모리의 전하 손실 원인 규명을 위한 Activation Energy 분석 (Study on the Activation Energy of Charge Migration for 3D NAND Flash Memory Application)

  • 양희훈;성재영;이휘연;정준교;이가원
    • 반도체디스플레이기술학회지
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    • 제18권2호
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    • pp.82-86
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    • 2019
  • The reliability of 3D NAND flash memory cell is affected by the charge migration which can be divided into the vertical migration and the lateral migration. To clarify the difference of two migrations, the activation energy of the charge loss is extracted and compared in a conventional square device pattern and a new test pattern where the perimeter of the gate is exaggerated but the area is same. The charge loss is larger in the suggested test pattern and the activation energy is extracted to be 0.058 eV while the activation energy is 0.28 eV in the square pattern.

3D NAND Flash Memory의 Remnant Polarization(Pr)과 Saturated Polarization(Ps)에 따른 Retention 특성 분석 (The Analysis of Retention Characteristic according to Remnant Polarization(Pr) and Saturated Polarization(Ps) in 3D NAND Flash Memory)

  • 이재우;강명곤
    • 전기전자학회논문지
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    • 제26권2호
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    • pp.329-332
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    • 2022
  • 본 논문에서는 ferroelectric(HfO2)구조가 적용된 3D NAND flash memory의 parameter에 따른 lateral charge migration의 retention과 Vth를 분석하였다. Ps가 클수록 Program 시 ferroelectric에서 가능한 최대 polarization이 크기 때문에 초기 Vth는 Ps 25µC/cm2 보다 Ps 70µC/cm2에서 약 1.04V차이로 커진다. 또한 Program 이후 trap된 전자는 시간이 지남에 따라서 lateral charge migration이 발생한다. Program 이후 gate에 전압을 가하지 않고 ferroelectric은 polarization을 유지하기 때문에 Ps와 크게 관계없이 Pr이 클수록 polarization이 커지고 lateral charge migration에 의한 ∆Vth는 Pr 5µC/cm2 보다 Pr 50µC/cm2에서 약 1.54V차이로 작아진다.

A simplified method to determine the chloride migration coefficient of concrete by the electric current in steady state

  • Lin, K.T.;Yang, C.C.
    • Computers and Concrete
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    • 제13권1호
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    • pp.117-133
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    • 2014
  • This study presents a rapid method for determining the steady state migration coefficient of concrete by measuring the electric current. This study determines the steady state chloride migration coefficient using the accelerated chloride migration test (ACMT). There are two stages to obtain the chloride migration coefficient. The first stage, the steady-state condition was obtained from the initial electric current at the beginning of ACMT. The second stage, the average electrical current in the steady state condition was used to determine the steady state chloride migration coefficient. The chloride migration coefficient can be determined from the average steady state current to avoid sampling and analyzing chlorides during the ACMT.

The Effect of Domain Wall on Defect Energetics in Ferroelectric LiNbO3 from Density Functional Theory Calculations

  • Lee, Donghwa
    • 한국세라믹학회지
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    • 제53권3호
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    • pp.312-316
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    • 2016
  • The energetics of defects in the presence of domain walls in $LiNbO_3$ are characterized using density-functional theory calculations. Domain walls show stronger interactions with antisite defects than with interstitial defects or vacancies. As a result, antisite defects act as a strong pinning center for the domain wall in $LiNbO_3$. Analysis of migration behavior of the antisite defects across the domain wall shows that the migration barrier of the antisite defects is significantly high, such that the migration of antisite defects across the domain wall is energetically not preferable. However, further study on excess electrons shows that the migration barrier of antisite defects can be lowered by changing the charge states of the antisite defects. So, excess electrons can enhance the migration of antisite defects and thus facilitate domain wall movement by weakening the pinning effect.

PCB 절연체에서 전하 형성과 수분 흡수 (Water Absorption and Charge Formation in PCB)

  • 이정수;황종선
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 추계학술대회 논문집 전기설비전문위원
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    • pp.233-234
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    • 2008
  • We observed internal space charge behavior for two types of epoxy composites under dc electric fields to investigate the influence of water at high temperature. In the case of glass/epoxy specimen, homocharge is observed at water-treated specimen, and spatial oscillations become clearer in the water-treated specimens. Electric field in the vicinity of the electrodes shows the injection of homocharge. In aramid/epoxy specimens, heterocharge is observed at water-treated specimens, i.e. negative charge accumulates near the anode, while positive charge accumulates near the cathode. Electric field is enhanced just before each electrode. In order to further examine the mechanism of space charge formation, we have developed a new system that allows in situ space charge observation during ion migration tests at high temperature and high humidity. Using this in situ system.

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PCB 절연체에서 전하 형성과 수분 흡수의 영향 (Influence of Water Absorption and Charge Formation in PCB)

  • 구정현;최용성;이경섭
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.2307-2308
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    • 2008
  • We observed internal space charge behavior for two types of epoxy composites under dc electric fields to investigate the influence of water at high temperature. In the case of glass/epoxy specimen, homocharge is observed at water-treated specimen, and spatial oscillations become clearer in the water-treated specimens. Electric field in the vicinity of the electrodes shows the injection of homocharge. In aramid/epoxy specimens, heterocharge is observed at water-treated specimens, i.e. negative charge accumulates near the anode, while positive charge accumulates near the cathode. Electric field is enhanced just before each electrode. In order to further examine the mechanism of space charge formation, we have developed a new system that allows in situ space charge observation during ion migration tests at high temperature and high humidity. Using this in situ system.

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Theoretical Studies on Phentl Group Migration of Protonated 1,2-Diphenyl Hydrazines

  • 김찬경;이인영;김장근;이익춘
    • Bulletin of the Korean Chemical Society
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    • 제21권5호
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    • pp.477-482
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    • 2000
  • Phenyl group migration within protonated 1,2-diphenyl hydrazines has been studied theoretically using the semi-empirical AM1 method. This reaction proceeds through a 3-membered cyclic transition state and requires high activation energy. In the reactant, there was no resonance stabilization for the moving Z-ring, however, hammett $p_Z^+$ values are large due to the direct involvement of the Z-ring inthe reaction, and the development of a negative charge on the reaction center gives them a posifive value. In the case of the non-moving ring, $p_Y^+$ values are small and negative owing to the smaller positive charge increase in the reaction center. The cross-interaction constant, $p_YZ^+$, was obtained from the activation enthalpies, using the multipe linear regression methdo, and the interaction between two substituents, Y and Z, is examined.

Computational study of protactinium incorporation effects in Th and Th compounds

  • Daroca, D. Perez;Llois, A.M.;Mosca, H.O.
    • Nuclear Engineering and Technology
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    • 제52권10호
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    • pp.2285-2289
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    • 2020
  • Protactinium contamination is a mayor issue in the thorium fuel cycle. We investigate, in this work, the consequences of Pa incorporation in vacancy defects and interstitials in Th, ThC and ThN. We calculate charge transfers and lattice distortions due to these incorporations as well as migration paths and energies involved in the diffusion of Pa.