Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Reliability Analysis by Lateral Charge Migration in Charge Trapping Layer of SONOS NAND Flash Memory Devices

SONOS NAND 플래시 메모리 소자에서의 Lateral Charge Migration에 의한 소자 안정성 연구

  • Sung, Jae Young (Department of Electronics Engineering, Chungnam National University) ;
  • Jeong, Jun Kyo (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Ga Won (Department of Electronics Engineering, Chungnam National University)
  • Received : 2019.12.23
  • Accepted : 2019.12.27
  • Published : 2019.12.31
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Abstract

As the NAND flash memory goes to 3D vertical Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) structure, the lateral charge migration can be critical in the reliability performance. Even more, with miniaturization of flash memory cell device, just a little movement of trapped charge can cause reliability problems. In this paper, we propose a method of predicting the trapped charge profile in the retention mode. Charge diffusivity in the charge trapping layer (Si3N4) was extracted experimentally, and the effect on the trapped charge profile was demonstrated by the simulation and experiment.

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References

  1. A.S. Spinelli, C.M. Compagnoni and A.L. Lacaita, "Reliability of NAND flash memories : Planar cells and emerging issues in 3D devices", Computers 6.2, 2017.
  2. A. Maconi, A. Arreghini, C.M. Compagnoni, A.S. Spinelli, J. Van Houdt and A.L. Lacaita, "Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices", Solid-State Electronics, 2012.
  3. E.W. Lim and R. Ismail, "Conduction mechanism of valence change resistive switching memory : a survey", Electronics, 2015.
  4. S. H. Kim, S. D. Yang, J. S. Kim, J. K. Jeong, H. D. Lee and G. W. Lee, "Charge spreading effect of stored charge on retention characteristics in SONOS NAND Flash memory devices", Transactions on Electrical and Electronic Materials, pp. 1863-186, 2015.
  5. C. Woo, S. Kim, J. Park, D. Lee, M. Kang and H. Shin, "Modeling of lateral migration mechanism during the retention operation in 3D NAND flash memories." IEEE 2019 Electron Devices Technology and Manufacturing Conference, 2019.
  6. A. Grossi, C. Zambelli and P. Olivio, "Reliability of 3D NAND flash memories", 3D Flash Memories, pp. 29-62, 2016.
  7. M. Menard and R.W. Paynter, "Fick's law of diffusion depth profiles applied to the degradation of oxidized polystyrene during ARXPS analysis", Surface and Interface Analysis : An International Journal devoted to the development and application of techniques for the analysis of surfaces, interfaces and thin films, 2005.