• Journal of IKEEE
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• v.25 no.4
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• pp.770-773
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• 2021

In this paper, the retention characteristics of 3D NAND flash memory applied with tapering and ferroelectric (HfO₂) structure were analyzed after programming operation. Electrons trapped in nitride are affected by lateral charge migration over time. It was confirmed that more lateral charge migration occurred in the channel thickened by tapering of the trapped electrons. In addition, the Oxide-Nitride-Ferroelectric (ONF) structure has better lateral charge migration due to polarization, so the change in threshold voltage (V_th) is reduced compared to the Oxide-Nitride-Oxide (ONO) structure.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.138-142
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• 2019

As the NAND flash memory goes to 3D vertical Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) structure, the lateral charge migration can be critical in the reliability performance. Even more, with miniaturization of flash memory cell device, just a little movement of trapped charge can cause reliability problems. In this paper, we propose a method of predicting the trapped charge profile in the retention mode. Charge diffusivity in the charge trapping layer (Si₃N₄) was extracted experimentally, and the effect on the trapped charge profile was demonstrated by the simulation and experiment.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.82-86
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• 2019

The reliability of 3D NAND flash memory cell is affected by the charge migration which can be divided into the vertical migration and the lateral migration. To clarify the difference of two migrations, the activation energy of the charge loss is extracted and compared in a conventional square device pattern and a new test pattern where the perimeter of the gate is exaggerated but the area is same. The charge loss is larger in the suggested test pattern and the activation energy is extracted to be 0.058 eV while the activation energy is 0.28 eV in the square pattern.

• Journal of IKEEE
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• v.26 no.2
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• pp.329-332
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• 2022

In this paper, retention characteristics of lateral charge migration according to parameters of 3D NAND flash memory to which ferroelectric (HfO₂) structure is applied and ∆V_th were analyzed. The larger the P_s, the greater maximum polarization possible in ferroelectric during Programming. Therefore, the initial V_th increases by about 1.04V difference at P_s 70µC/cm² than at P_s 25µC/cm². Also, electrons trapped after the Program operation causes lateral charge migration over time. Since ferroelectric maintains polarization without applying voltage to the gate after Programming, regardless of P_s value, polarization increases as P_r increases and the ∆V_th due to lateral charge migration becomes smaller by about 1.54V difference at P_r 50µC/cm² than P_r 5µC/cm².

• Computers and Concrete
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• v.13 no.1
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• pp.117-133
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• 2014

This study presents a rapid method for determining the steady state migration coefficient of concrete by measuring the electric current. This study determines the steady state chloride migration coefficient using the accelerated chloride migration test (ACMT). There are two stages to obtain the chloride migration coefficient. The first stage, the steady-state condition was obtained from the initial electric current at the beginning of ACMT. The second stage, the average electrical current in the steady state condition was used to determine the steady state chloride migration coefficient. The chloride migration coefficient can be determined from the average steady state current to avoid sampling and analyzing chlorides during the ACMT.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.312-316
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• 2016

The energetics of defects in the presence of domain walls in $LiNbO_3$ are characterized using density-functional theory calculations. Domain walls show stronger interactions with antisite defects than with interstitial defects or vacancies. As a result, antisite defects act as a strong pinning center for the domain wall in $LiNbO_3$. Analysis of migration behavior of the antisite defects across the domain wall shows that the migration barrier of the antisite defects is significantly high, such that the migration of antisite defects across the domain wall is energetically not preferable. However, further study on excess electrons shows that the migration barrier of antisite defects can be lowered by changing the charge states of the antisite defects. So, excess electrons can enhance the migration of antisite defects and thus facilitate domain wall movement by weakening the pinning effect.

• Proceedings of the KIEE Conference
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• 2008.09a
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• pp.233-234
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• 2008

We observed internal space charge behavior for two types of epoxy composites under dc electric fields to investigate the influence of water at high temperature. In the case of glass/epoxy specimen, homocharge is observed at water-treated specimen, and spatial oscillations become clearer in the water-treated specimens. Electric field in the vicinity of the electrodes shows the injection of homocharge. In aramid/epoxy specimens, heterocharge is observed at water-treated specimens, i.e. negative charge accumulates near the anode, while positive charge accumulates near the cathode. Electric field is enhanced just before each electrode. In order to further examine the mechanism of space charge formation, we have developed a new system that allows in situ space charge observation during ion migration tests at high temperature and high humidity. Using this in situ system.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.2307-2308
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• 2008

We observed internal space charge behavior for two types of epoxy composites under dc electric fields to investigate the influence of water at high temperature. In the case of glass/epoxy specimen, homocharge is observed at water-treated specimen, and spatial oscillations become clearer in the water-treated specimens. Electric field in the vicinity of the electrodes shows the injection of homocharge. In aramid/epoxy specimens, heterocharge is observed at water-treated specimens, i.e. negative charge accumulates near the anode, while positive charge accumulates near the cathode. Electric field is enhanced just before each electrode. In order to further examine the mechanism of space charge formation, we have developed a new system that allows in situ space charge observation during ion migration tests at high temperature and high humidity. Using this in situ system.

• Bulletin of the Korean Chemical Society
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• v.21 no.5
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• pp.477-482
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• 2000

Phenyl group migration within protonated 1,2-diphenyl hydrazines has been studied theoretically using the semi-empirical AM1 method. This reaction proceeds through a 3-membered cyclic transition state and requires high activation energy. In the reactant, there was no resonance stabilization for the moving Z-ring, however, hammett $p_Z^+$ values are large due to the direct involvement of the Z-ring inthe reaction, and the development of a negative charge on the reaction center gives them a posifive value. In the case of the non-moving ring, $p_Y^+$ values are small and negative owing to the smaller positive charge increase in the reaction center. The cross-interaction constant, $p_YZ^+$, was obtained from the activation enthalpies, using the multipe linear regression methdo, and the interaction between two substituents, Y and Z, is examined.

• Nuclear Engineering and Technology
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• v.52 no.10
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• pp.2285-2289
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• 2020

Protactinium contamination is a mayor issue in the thorium fuel cycle. We investigate, in this work, the consequences of Pa incorporation in vacancy defects and interstitials in Th, ThC and ThN. We calculate charge transfers and lattice distortions due to these incorporations as well as migration paths and energies involved in the diffusion of Pa.