• Journal of Korean Society of Industrial and Systems Engineering
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• v.27 no.4
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• pp.133-140
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• 2004

This study deals with human reaction speed according to human physical conditions (body size) such as head width, thickness, breast width, arm extent, and age. Especially, the results of this study are compared between young and old generation. According to this study, the thickness and extent factor do not have any correlation with human reaction speed, but width factors(head width, breast width, etc) have some correlation with human reaction speed. The result of this study can be used to find fitter person for a special job such as emergency condition job, sports man (because you can find a person having a good talent for it without test). Also, the purpose of this study is to find CNT (Channel Noise Time). The word of CNT is to explain the relation between Channel Noise and working speed. (Channel Noise is a kind of noise happening between the human information transmission channel.)

• Korean Journal of Hydrosciences
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• v.1
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• pp.61-71
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• 1990

The characteristics of radial thickness of ice jam at the center part of channel bends were analyzed briefly in this paper. Jam thickness in channel bends increases both toward the inner bank, and dowmstream. For this study, slope at the jam's underside was assumed to be liner with similarity of radial slope of bed in alluvial bends. Radial slope at the jam's underside in floating ice elements was estimated using the force equilibrium theory in the radial direction. The eqution which can be estimated the radial slope of ice jam was suggested using Falcon and Kennedy's bed layer theory. Experimental data, which were measured at the center part of cross-section in a single 180-degree bend, were compared to the calculated values using the suggested equtions. The result shows that the calcultated values were smaller than the measured ones. Ot is considered that the estimated value of shear stress in the radial direction may be smaller than the actual and two-layer model may be not suibable for alluvial bend flow.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.2
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• pp.401-406
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• 2015

The change of subthreshold swing for channel length of asymmetric double gate(DG) MOSFET has been analyzed. The subthreshold swing is the important factor to determine digital chracteristics of transistor and is degraded with reduction of channel. The subthreshold swing for channel length of the DGMOSFET developed to solve this problem is investigated for channel thickness, oxide thickness, top and bottom gate voltage and doping concentration. Especially the subthreshold swing for asymmetric DGMOSFET to be able to be fabricated with different top and bottom gate structure is investigated in detail for bottom gate voltage and bottom oxide thickness. To obtain the analytical subthreshold swing, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. As a result, subthreshold swing is sensitively changed according to top and bottom gate voltage, channel doping concentration and channel dimension.

• Nuclear Engineering and Technology
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• v.49 no.7
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• pp.1463-1471
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• 2017

In order to monitor the pipe thinning caused by flow-accelerated corrosion (FAC) that occurs in coolant piping systems, a shear horizontal ultrasonic pitch-catch waveguide technique was developed for accurate pipe wall thickness monitoring. A clamping device for dry coupling contact between the end of the waveguide and pipe surface was designed and fabricated. A computer program for multi-channel on-line monitoring of the pipe thickness at high temperature was also developed. Both a four-channel buffer rod pulse-echo type and a shear horizontal ultrasonic waveguide type for high-temperature thickness monitoring system were successfully installed to the test section of the FAC proof test facility. The overall measurement error can be estimated as ${\pm}10{\mu}m$ during a cycle from room temperature to $200^{\circ}C$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.372-377
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• 2013

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET has the advantage to reduce the short channel effects as improving the current controllability of gate. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change of the breakdown voltage for gate oxide thickness and channel thickness.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.11
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• pp.1497-1505
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• 2000

A numerical study is made on the ice-formation for a laminar flow in a curved channel. When the water flows through the curved channel with the walls specified below the freezing temperature, the ice layer has been formed on the curved surface, different from that of a straight channel. The fluctuation of ice layer has been predicted, considering the variation of velocity and temperature near the curved portion of channel. The study also takes into account the interaction existing between the laminar flow and the curved channel. In the solution strategy, the present study is substantially different from the existing works in that the complete set of governing equations in both the solid and liquid regions are resolved. The results from this study have been mainly presented, focusing on the variation of ice layer close to the curved portion. Numerical results have been obtained parametrically by varying the curved angle and the radius of curvature of channel, in addition to the variation of Reynolds numbers and wall temperatures of channel. The results show that the curved shape of channel has the great effect on the thickness of the solidification layer. The wave of ice layer thickness appears in the vicinity of curved portion. This behavior of ice layer has been amplified as is the increasing of curved angle and the radius of curvature of channel. In addition, the ice layer becomes thin as Reynolds numbers in increasing. And also, as the wall temperature of channel increases, the width of channel becomes to be shrunk due to the growth of ice layers in the upper and lower wall of channel.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.579-584
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• 2012

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET. The DIBL is very important short channel effects as phenomenon that barrier height becomes lower since drain voltage influences on potential barrier of source in short channel. The analytical potential distribution of Poisson equation, validated in previous papers, has been used to analyze DIBL. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. The change of DIBL has been investigated for device parameters such as channel thickness, oxide thickness and channel doping concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.41-41
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• 2009

We utilized atomic layer deposition (ALD) for the growth of the ZnO channel layers in the oxide thin-film-transistors (TFTs) with a bottom-gate structure using a $SiO_2/p-Si$ substrate. For fundamental study, the effect of the channel thickness and thermal treatment on the TFT performance was investigated. The growth modes for the ALD grown ZnO layer changed from island growth to layer-by-layer growth at thicknesses of > 7.5 nm with highly resistive properties. A channel thickness of 17 nm resulted in the good TFT behavior with an onloff current ratio of > $10^6$ and a field effect mobility of 2.9 without the need for thermal annealing. However, further increases in the channel thickness resulted in a deterioration of the TFT performance or no saturation. The ALD grown ZnO layers showed reduced electrical resistivity and carrier density after thermal treatment in oxygen.

• Journal of Radiation Protection and Research
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• v.29 no.1
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• pp.25-31
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• 2004

Results of EGS4 based calculations to study the spatial resolution of gas detectors are described. The calculations include radial distribution of electrons generated by photons of various energies penetrating into variable thickness of Ar and Xe gas layers. Given a desired spatial resolution, the maximum allowed thickness of gas layer for each energy level is determined. In order to obtain 0.1mm spatial resolution, the maximum thickness for the Ar gas is found to be 2mm for photon energies below 14keV while the optimum energy of photons for Xe gas with the same thickness is about 45keV. The results of calculations performed to compare the number of electrons generated by CsI coated micro-channel plate and the number of electrons generated by the Ar and Xe gas layers are described. The results show that the number of electrons generated by the gases is about 10 times higher than the one generated by CsI coated micro-channel plate. A few sample gray scale images generated by these calculations are included.

• Nuclear Engineering and Technology
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• v.55 no.6
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• pp.2195-2205
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• 2023

One of the salient nuclear fuel performance parameters for new fuel types under development is changes in fuel thickness. To test the new commercially fabricated U-10Mo monolithic plate-type fuel, an irradiation experiment was designed that consisted of multiple mini-plate capsules distributed within the Advanced Test Reactor (ATR) core, the mini-plate 1 (MP-1) experiment. Each capsule contains eight mini-plates that were either fueled or "dummy" plates. Fuel thickness changes within a fuel assembly can be characterized by measuring the gaps between the plates ultrasonically. The channel gap probe (CGP) system is designed to measure the gaps between the plates and will provide information that supports qualification of U-10Mo monolithic fuel. This study will discuss the design and the results from the use of a custom-designed CGP system for characterizing the gaps between mini-plates within the MP-1 capsules. To ensure accurate and repeatable data, acceptance and calibration procedures have been developed. Unfortunately, there is no "gold" standard measurement to compare to CGP measurements. An effort was made to use plate thickness obtained from post-irradiation measurements to derive channel gap estimates for comparison with the CGP characterization.