• Journal of the Korean Ceramic Society
• /
• v.34 no.8
• /
• pp.803-810
• /
• 1997

Ba0.5Sr0.5TiO3 thin films were deposited by RF magnetron sputliring method in order to clarify the anneal condition and doping effect on loakage current Nb and Al were selected as electron donor and acceptor dopants respectively, in the BST films because they have been known to have nearly same ionic radii as Ti and thought to substitute Ti sites to influence the charge carrier and the acceptor state adjacent to the gram boundary. BST thin films prepared in-situ at elevated temperature showed selatively high leakage current density and low breakdown voltage. In order to achieve smooth surface and to improve electrical properties, BST thin films were deposited at room temperature and annealed at elevated temperature. Post-annealed BST thin films showed smoother surface morphology and lower leakage current density than in-situ prepared thin films. The leakage current density of Al doped thin films was measured to be around 10-8A/cm2, which is much lower than those of undoped and Nb doped BST films. The result clearly demonstrates that higher Schottky barrier and lower mobile charge carrier concentration achieved by annealing in the oxygen atmosphere and by Al doping are desirable for reducing leakage current density in BST thin films.

• Proceedings of the IEEK Conference
• /
• 1999.06a
• /
• pp.243-246
• /
• 1999

We studied the MOSFET characteristics and the hot-carrier reliability with the sidewall spacer composition and the post gate oxidation thickness in 0.20${\mu}{\textrm}{m}$ gate length transistor. The MOSFET with NO(Nitride＋Oxide) sidewall spacer exhibits the large degradation of hot-carrier lifetime because there is no buffering oxide against nitride stress. When the post gate oxidation is skipped, the hot-carrier lifetime is improved, but GIDL (Gate Induced Drain Leakage) current is also increased.

• ETRI Journal
• /
• v.44 no.3
• /
• pp.504-511
• /
• 2022

Monte Carlo simulations show that, as temperature increases, the average kinetic energy of channel electrons in a GaN transistor first decreases and then increases. According to the calculations, the relative energy change reaches 40%. This change leads to a reduced barrier height due to quantum coupling among the three-dimensional motions of channel electrons. Thus, an analysis and physical model of the gate leakage current that includes drift velocity is proposed. Numerical calculations show that the negative and positive temperature dependence of gate leakage currents decreases across the barrier as the field increases. They also demonstrate that source-drain voltage can have an effect of 1 to 2 orders of magnitude on the gate leakage current. The proposed model agrees well with the experimental results.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.240.1-240.1
• /
• 2013

본 연구에서는 Symmetric NMOSFET의 channel length에 따른 전기적 특성 분석에 관한 연구를 진행하였다. 특성 분석에 사용된 소자의 Gate oxide 두께는 6 nm 이며, 채널 Width/Length는 각각 10/10 ${\mu}m$, 10/0.2 ${\mu}m$ 이다. Drain Avalanche Hot Carrier(DAHC) 테스트를 진행하기 위하여 각각 스트레스 조건을 추출하였고, 조건에 해당되는 스트레스를 1700초 동안 인가하였다. 스트레스 후, Channel length가 10 ${\mu}m$과 0.2 ${\mu}m$인 두 소자의 특성을 측정, 분석결과 10 ${\mu}m$의 소자의 경우 문턱전압(VT)과 Subthreshold swing (SS)의 변화가 없었지만 0.2 ${\mu}m$의 소자의 경우 0.42V의 (from 0.67V to 1.09V) 문턱전압 변화 (VTH)와 71 mV/dec (from 79 mV/dec to 150 mV/dec))의 Swing (SS)변화를 보여 스트레스 후에 Interface trap이 증가하였음을 알 수 있다. off-state leakage current를 측정 결과 0.2 ${\mu}m$ 의 경우 leakage current의 양이 증가하였음을 알 수 있고 이는 드레인 부근에 증가된 interface trap에 의한 현상으로 판단된다. 상기 결과와 같이 DAHC 스트레스에 의한 소자의 열화 현상은 Channel length가 짧을수록 더 크게 의존하는 것을 확인하였다.

• Journal of Ocean Engineering and Technology
• /
• v.28 no.6
• /
• pp.517-526
• /
• 2014

The leakage of cryogenic LNG through cracks in the insulation membrane of an LNG carrier causes the hull structure to experience a cold spot as a result of the heat transfer from the LNG. The hull structure will become brittle at this cold spot and the evaporated natural gas may potentially lead to a hazard because of its flammability. This paper presents a computational model for the LNG flow and heat diffusion in an LNG insulation panel subject to leakage. The temperature distribution in the insulation panel and the speed of gas diffusion through it are simulated to assess the safety level of an LNG carrier subject that experiences a leak. The behavior of the leaked LNG is modeled using a multiphase flow that considers the mixture of liquid and gas. The simulation model considers the phase change of the LNG, gas-liquid multiphase interactions in the porous media, and accompanying rates of heat transfer. It is assumed that the NO96-GW membrane storage is composed of glass wool and plywood for the numerical simulation. In the numerical simulation, the seepage, heat diffusion, and evaporation of the LNG are investigated. It is found that the diffusion speed of the leakage is very high to accelerate the evaporation of the LNG.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.11a
• /
• pp.113-116
• /
• 1996

The drain current of the MOSFET in the off state(i.e., Id when Vgs=0V) is undesired but nevertheless important leakage current device parameter in many digital CMOS IC applications (including DRAMs, SRAMs, dynamic logic circuits, and portable systems). The standby power consumed by devices in the off state have added to the total power consumed by the IC, increasing heat dissipation problems in the chip. In this paper, hot-carrier-induced degra- dation and gate-induced-drain-leakage curr- ent under worse case in P-MOSFET\`s have been studied. First of all, the degradation of gate-induced- drain-leakage current due to electron/hole trapping and surface electric field in off state MOSFET\`s which has appeared as an additional constraint in scaling down p-MOSFET\`s. The GIDL current in p-MOSFET\`s was decreased by hot-electron stressing, because the trapped charge were decreased surface-electric-field. But the GIDL current in n-MOS77T\`s under worse case was increased.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.15 no.3
• /
• pp.271-277
• /
• 2004

A Si(Silicon) MEMS(Micro Electro Mechanical System) package using a doped lossy Si carrier for CPW(Coplanar Waveguide) MMICs(Microwave and Millimeter-wave Integrated Circuits) is proposed in order to reduce parasitic problems of leakage, coupling and resonance. The proposed chip-carrier scheme is verified by fabricating and measuring a GaAs CPW on the two types of carriers(conductor-back metal, doped lossy Si) in the frequency from 0.5 to 40 ㎓. The proposed MEMS package using the lightly doped lossy(15 Ω$.$cm) Si chip-carrier and the HRS(High Resistivity Silicon, 15 ㏀$.$cm) shows the optimized loss and parasitic problems-free since the doped lossy Si-carrier effectively absorbs and suppresses the resonant leakage. The Si MEMS package for CPW MMICs has an insertion loss of only - 2.0 ㏈ and a power loss of - 7.5 ㏈ at 40 ㎓.

• Journal of Ship and Ocean Technology
• /
• v.11 no.3
• /
• pp.24-38
• /
• 2007

It is a very challenging work to design large Arctic LNG carrier, since LNG carrier requires high reliability for the structural safety and the environment of Arctic region is known to be very severe. Therefore, special attention should be paid for the verifying the structural safety of LNG career particularly with regard to LNG leakage. In this paper, the safety of the hull structure and cargo containment system of 208K MK $III^{TM}$ type LNG carriers with Arc4 is investigated based on the direct calculation of ice loads as well as wave loads. From the whole investigation, it is clear that the developed vessel - 208K MK $III^{TM}$ type LNG carrier with RMRS Ice class Arc4 - has enough strength and is safe to be operated in Arctic region.

• Proceedings of the KIEE Conference
• /
• 1998.07d
• /
• pp.1367-1369
• /
• 1998

To achieve the ULSI goals of higher density, greater performance and operation speed have been scaled down. However, the reduction of channel length cause undesirable problems such as drop of punchthrough voltage, hot-carrier degradation and high leakage current, etc.. It is shown that the device characteristics depend on process parameters. In this Paper, we catched hold of trends of hot-carrier effects and punchthrough voltages due to variation of some process parameters such as LDD doses(P), spacer lengths, channel doses($BF_2$) and $V_T$ adjusting channel implantation energies using design trend curve (DTC). As the LDD and channel doses increased, hot-carrier phenomena became more severe, and punchthrough voltage was decreased. It were represented that punchthrough and hot carrier effects were critically depend on LDD and channel doses.

• Smart Structures and Systems
• /
• v.24 no.6
• /
• pp.803-812
• /
• 2019

Triplex composite is an epoxy-bonded joint structure, which constitutes the secondary barrier in a liquefied natural gas (LNG) carrier. Defects in the triplex composite weaken its shear strength and may cause leakage of the LNG, thus compromising the structural integrity of the LNG carrier. This paper proposes an autonomous triplex composite inspection (ATCI) system for visualizing and classifying hidden defects in the triplex composite installed inside an LNG carrier. First, heat energy is generated on the surface of the triplex composite using halogen lamps, and the corresponding heat response is measured by an infrared (IR) camera. Next, the region of interest (ROI) is traced and noise components are removed to minimize false indications of defects. After a defect is identified, it is classified as internal void or uncured adhesive and its size and shape are quantified and visualized, respectively. The proposed ATCI system allows the fully automated and contactless detection, classification, and quantification of hidden defects inside the triplex composite. The effectiveness of the proposed ATCI system is validated using the data obtained from actual triplex composite installed in an LNG carrier membrane system.