• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.179.2-179.2
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• 2014

Carbon nanotubes (CNT)-metal contacts play an important role in nanoelectronics applications such as field-effect transistor (FET) devices. Using Al and (10,0) CNT, we have recently showed that the CNT-metal contacts mediated via topological defects within CNT exhibits intrinsically low contact resistance, thanks to the preservation of the sp2 bonding network at the metal-CNT contacts.[1] It is well-established that metals with good wetting property such as Pd consistently yield good contacts to both metallic and semiconducting CNTs. In this work, the electronic and charge transport properties of the interfaces between capped CNT and Pd will be investigated based on first-principles computations and compared with previous results obtained for the Al electrodes.

• Journal of information and communication convergence engineering
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• 제13권3호
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• pp.180-188
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• 2015

As a potential alternative to the complementary metal-oxide semiconductor (CMOS) technology, many researchers are focusing on carbon-nanotube field-effect transistors (CNFETs) for future electronics. However, existing studies report the advantages of CNFETs over CMOS at the device level by using small-scale circuits, or over outdated CMOS technology. In this paper, we propose a methodology of analyzing CNFET-based circuits and study its impact at the full-chip scale. First, we design CNFET standard cells and use them to construct large-scale designs. Second, we perform parasitic extraction of CNFET devices and characterize their timing and power behaviors. Then, we perform a full-chip analysis and show the benefits of CNFET over CMOS in 45-nm and 20-nm designs. Our full-chip study shows that in the 45-nm design, CNFET circuits achieve a 5.91×/3.87× (delay/power) benefit over CMOS circuits at a density of 200 CNTs/µm. In the 20-nm design, CNFET achieves a 6.44×/3.01× (delay/power) benefit over CMOS at a density of 200 CNTs/µm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제27권10호
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• pp.668-672
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• 2014

Carbon nanotubes(CNT) has chemical stability and great sensitivity characteristics. In particular, the gas sensor required characteristics such as rapid, selectivity and sensitivity sensor. Therefore, CNT are ideal materials to gas sensor. So, we fabricated the NOx gas sensors of MOS-FET type using the MWCNT (multi-walled carbon nanotube). The fabricated sensor was used to detect the NOx gas for the variation of $V_{gs}$(gate-source voltage) and electrode changed electrode spacing=30, 60, 90[${\mu}m$]. The gas sensor absorbed with the NOx gas molecules showed the decrease of resistance, and the sensitivity of sensor was increased by magnification of electrode spacing. Furthermore, when the voltage($V_{gs}$) was applied to the gas sensor, the decrease in resistance was increased. On the other hand, the sensor sensitivity for the injection of NOx gas was the highest value at the electrode spacing $90[{\mu}m]$. We also obtained the adsorption energy($U_a$) using the Arrhenius plots by the reduction of resistance due to the voltage variations. As a result, we obtained that the adsorption energy was increased with the increment of the applied voltages.

• Journal of the Institute of Electronics Engineers of Korea SC
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• 제48권2호
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• pp.28-34
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• 2011

In previous reports, we investigated a selective assembly method of fabricating single-walled carbon nanotubes (SWCNTs) on a silicon-dioxide ($SiO_2$) surface by using only a photolithographic process. In this paper, we have fabricated field effect transistors (FETs) with SWCNT channels by using the technique mentioned above. Also, we have electrically measured gating effects of these FETs under different source-drain voltages ($V_{SD}$). These FETs have been fabricated for sensor applications. Photoresist (PR) patterns have been made on a $SiO_2$-grown silicon (Si) substrate by using a photolithographic process. This PR-patterned substrate have been dipped into a SWCNT solution dispersed in dichlorobenzene (DCB). These PR patterns have been removed by using aceton. As a result, a selectively-assembled SWCNT channels in FET arrays have been obtained between source and drain electrodes. Finally, we have successfully fabricated 4 FET arrays based on SWCNT-channels by using our simple self-assembly technique.

• Proceeding of EDISON Challenge
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• 제4회(2015년)
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• pp.350-353
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• 2015

최근 에너지 효율과 소형화측면에서 한계를 보이는 Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET)을 대체할 수 있는 소자로 Tunneling FET(TFET)이 주목받고 있다. 본 논문에서는 탄소나노튜브(Carbon Nanotube, CNT) TFET을 시뮬레이션하여 전자회로의 기본 단위인 인버터(Inverter)를 설계한다. 설계한 인버터의 성능을 CNT-MOSFET 인버터와 비교하여 저전력 디지털 회로로써의 가능성을 확인한다.

• Journal of Korean Society on Water Environment
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• 제28권5호
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• pp.762-767
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• 2012

The ecotoxicity assessment of nanomaterials (NMs) in the environment is actively conducted throughout the world because of the concerns about their potential risk from usage and release into the environment, as well as their unique physiochemical properties. Ecotoxicity tests for NMs have been conducted using various species and methods; however, in spite of these efforts, the characteristics and toxicity of NMs have not been defined. The fish embryo toxicity test (FET) has been conducted extensively to evaluate the toxicity of NMs as an alternative to a whole-body test in fish. In this study, we collected and analyzed the trends of nanotoxicity on the early development of freshwater fish. The model nanomaterials are carbon NMs ($C_{60},\;C_{70},\;C_{60}$(OH)n and carbon nanotube). Their adverse effects were extensively investigated based on the properties of NMs, test species, and diverse exposure conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.268-268
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• 2010

단일벽 탄소 나노튜브(SWCNT)는 그 뛰어난 전기적, 물리적 특성 때문에 반도체 공정에 있어서 중요한 p-type 채널 물질로 꼽히고 있다. 본 연구에서는 SWCNT를 성장하여 이를 이용한 전계효과 트랜지스터를 제작하고 또한, 부분적인 폴리머의 코팅으로 타입을 변화하는 연구를 보이고자 한다. Ferritin용액을 DI-water에 2000배 희석하여 SiO2 기판 위에 뿌린 뒤 Methanol을 이용하여 기판 표면에 촉매가 붙어있게 한다. 이 기판을 $900^{\circ}C$로 가열하여 유기물질을 제거한 뒤 화학 기상 증착(Chemical Vapor Deposition)방법으로 SWCNT를 성장하게 된다. 이렇게 성장된 SWCNT는 촉매의 농도에 비례하는 밀도를 가지게 되며 이 위에 전극을 증착하고 back-gate를 설치하여 FET를 제작한다. 메탈릭한 SWCNT는 breakdown 공정을 통하여 제거한 뒤, 전자 농도가 높은 NADH를 전체적으로 코팅을 한다. NADH는 기존의 다른 폴리머(polyethyleneimine: PEI)에 비교하여 코팅 후 전자 제공 효과가 크며 그 성질의 재현성이 높고 공기 중에서 안정성을 유지하는 능력이 있다. 이러한 NADH의 코팅으로 n-type으로의 SWCNT FET를 제작하였으며 type conversion 현상을 이용하면 국부적인 NADH의 코팅으로 homojunction-diode의 제작 등 다양한 소자의 제작에 적용될 것으로 예상한다.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.549-549
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• 2012

Early detection of cancer biomarkers in the blood is of vital importance for reducing the mortality and morbidity in a number of cancers. From this point of view, immunosensors based on nanowire (NW) and carbon nanotube (CNT) field-effect transistors (FETs) that allow the ultra-sensitive, highly specific, and label-free electrical detection of biomarkers received much attention. Nevertheless 1D nano-FET biosensors showed high performance, several challenges remain to be resolved for the uncomplicated, reproducible, low-cost and high-throughput nanofabrication. Recently, two-dimensional (2D) graphene and reduced GO (RGO) nanosheets or films find widespread applications such as clean energy storage and conversion devices, optical detector, field-effect transistors, electromechanical resonators, and chemical & biological sensors. In particular, the graphene- and RGO-FETs devices are very promising for sensing applications because of advantages including large detection area, low noise level in solution, ease of fabrication, and the high sensitivity to ions and biomolecules comparable to 1D nano-FETs. Even though a limited number of biosensor applications including chemical vapor deposition (CVD) grown graphene film for DNA detection, single-layer graphene for protein detection and single-layer graphene or solution-processed RGO film for cell monitoring have been reported, development of facile fabrication methods and full understanding of sensing mechanism are still lacking. Furthermore, there have been no reports on demonstration of ultrasensitive electrical detection of a cancer biomarker using the graphene- or RGO-FET. Here we describe scalable and facile fabrication of reduced graphene oxide FET (RGO-FET) with the capability of label-free, ultrasensitive electrical detection of a cancer biomarker, prostate specific antigen/${\alpha}$ 1-antichymotrypsin (PSA-ACT) complex, in which the ultrathin RGO channel was formed by a uniform self-assembly of two-dimensional RGO nanosheets, and also we will discuss about the immunosensing mechanism.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• 제8권1호
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• pp.37-44
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• 2015

In this paper, we have investigated a selective assembly method of single-walled carbon nanotubes (SWCNTs) on a silicon substrate using only photolithographic process and then proposed a fabrication method of field effect transistors (FETs) using SWCNT-based patterns. The aminopropylethoxysilane (APTES) patterns, which are formed for positively charged surface molecular patterns, are utilized to assemble and align millions of SWCNTs and we can more effectively assemble on a silicon (Si) surface using this method than assembly processes using only the 1-octadecyltrichlorosilane (OTS). We investigated a selective assembly method of SWCNTs on a Si surface using surface-programmed APTES and OTS patterns and then a fabrication method of FETs. photoresist(PR) patterns were made using photolithographic process on the silicon dioxide (SiO2) grown Si substrate and the substrate was placed in the OTS solution (1:500 v/v in anhydrous hexane) to cover the bare SiO2 regions. After removing the PR, the substrate was placed in APTES solution to backfill the remaining SiO2 area. This surface-programmed substrate was placed into a SWCNT solution dispersed in dichlorobenzene. SWCNTs were attracted toward the positively charged molecular regions, and aligned along the APTES patterns. On the contrary, SWCNT were not assembled on the OTS patterns. In this process, positively charged surface molecular patterns are utilized to direct the assembly of negatively charged SWCNT on SiO2. As a result, the selectively assembled SWCNT channels can be obtained between two electrodes(source and drain electrodes). Finally, we can successfully fabricate SWCNT-based multi-channel FETs by using our self-assembled monolayer method.

• Transactions of the Korean Society of Mechanical Engineers B
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• 제38권7호
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• pp.601-605
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• 2014

Porous conductors are known to demonstrate excellent electrical, mechanical, and chemical resistance. These porous conductors demonstrated potential applications in various fields such as electrodes for supercapacitors, flexible heaters, catalytic electrodes, and sorbents. In this study, we described a pressure sensitive device using conductive and porous sponges. With an extremely simple "dipping and drying" process using a single-walled carbon nanotube (SWCNT) solution, we produced conductive sponges with sheet resistance of < $30k{\Omega}/sq$. These carbon nanotube sponges can be deformed into any shape elastically and repeatedly compressed to large strains without collapse. The pressure sensors developed from these sponges demonstrated high resistance change under pressure of up to a half of their initial resistance.