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Fabrication Process of Single-walled Carbon Nanotube Sensors Aligned by a Simple Self-assembly Technique  

Kim, Kyeong-Heon (Photonics/Sensor System Center, Robotics/ Systems Division, Korea Institute of Science and Technology)
Kim, Sun-Ho (Photonics/Sensor System Center, Robotics/ Systems Division, Korea Institute of Science and Technology)
Byun, Young-Tae (Photonics/Sensor System Center, Robotics/ Systems Division, Korea Institute of Science and Technology)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SC / v.48, no.2, 2011 , pp. 28-34 More about this Journal
Abstract
In previous reports, we investigated a selective assembly method of fabricating single-walled carbon nanotubes (SWCNTs) on a silicon-dioxide ($SiO_2$) surface by using only a photolithographic process. In this paper, we have fabricated field effect transistors (FETs) with SWCNT channels by using the technique mentioned above. Also, we have electrically measured gating effects of these FETs under different source-drain voltages ($V_{SD}$). These FETs have been fabricated for sensor applications. Photoresist (PR) patterns have been made on a $SiO_2$-grown silicon (Si) substrate by using a photolithographic process. This PR-patterned substrate have been dipped into a SWCNT solution dispersed in dichlorobenzene (DCB). These PR patterns have been removed by using aceton. As a result, a selectively-assembled SWCNT channels in FET arrays have been obtained between source and drain electrodes. Finally, we have successfully fabricated 4 FET arrays based on SWCNT-channels by using our simple self-assembly technique.
Keywords
Self-assembly; SWCNT; Sensors; FET; Photolithography;
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