• 전기의세계
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• v.28 no.1
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• pp.53-58
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• 1979

In the microwave heating system, a ferroresonant transformer is used to regulate the magnetron power fluctuation. For the simplification, nonlinear characteristics of the transformer and the magnetron are idealized to be piecewise linear. Dipped peak shape of the magnetron current is explained qualitatively by considering the fundamental and third harmonic frequency components in the circuit. Design equations providing the values of the leakage inductance, turn ratio of the transformer and the capacitance are derived analytically by cosnidering the fundamental frequency component only. The ferroresonant transformer is designed to obtain a required regulation and high input power factor from the derived design equations, and analytical calculations are compared with experimental measurements.

• The Journal of the Korea Contents Association
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• v.18 no.10
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• pp.425-430
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• 2018

The battery system of an electric vehicle suffers from the problem the battery output and the service life decrease at low temperature. A Positive Temperature Coefficient(PTC) heater is used for maintaining room temperature but is heavy due to a complicated insulation structure. The larger the weight is, the lower the fuel economy of the electric vehicle is. On the other hand a induction heater have a simple insulation structure, which is effective in weight reduction and has a rapid temperature rise. The induction heater consists of an LC resonance circuit. The larger the capacitance is, the higher the price and weight is. Therefore, the inductance should be increased to reduce the capacitance. Also, the main heat source of the induction heater is coreloss. So, it is important to optimize inductance and coreloss in terms of electromagnetic field design. In this paper, the inductance and the coreloss according to the change of the induction heater structure were optimized through the Taguchi method and Finite Element Method(FEM) simulation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.2
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• pp.63-68
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• 2005

Total 12 units of high power klystron-modulator systems as microwave source are under operation for 2.5 GeV electron linear accelerator in Pohang Light Source (PLS) linac. The klystron-modulator system has an important role for the stable operation to improve an availability statistics of overall system performance of klystron-modulator system. RF power and beam power of klystron are precisely measured for the effective control of electron beam. A precise measurement and measurement equipment with good response characteristics are demanded for this. Input power of klystron is calculated from the applied voltage and the current on its cathode. Tiny measurement error severely effects RF output power value of klystron. Therefore, special care is needed to measure precise beam voltage. Capacitive voltage divider (CVD), which divides input voltage as capacitance ratio, is intended for the measurement of a beam voltage of 400 kV generated from the klystron-modulator system. Main parameter to determine standard capacitance in the high arm of CVD is dielectric constant of insulation oil. Therefore CVD should be designed to have a minimum capacitance variation due to voltage, frequency and temperature in the measurement range. This paper will be present and discuss the design concept and analysis of capacitive voltage divider for a pulsed high-voltage measurement, and the empirical relations between capacitance effects and oil temperature variation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.3
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• pp.262-268
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• 2010

In this paper, a high power active tunable bandpass filter made of dielectric resonators and varactor diodes is designed using the active capacitance circuit generating negative resistance for tuning cellular TX, RX band. An active capacitance circuit's series feedback circuit using GaAs HFET whose $P_{1dB}$ is 32 dBm is used for compensating the losses from the varactor diodes of the tunable bandpass filter. The tuning elements, the varactor diodes are used as the back-to-back configuration to achieve the high power performance, The designed active capacitance circuit improves the insertion loss characteristics. The designed 2-stage active tunable dielectric bandpass filter at cellular band can cover from 800 MHz to 900 MHz. The insertion losses at 836 MHz and 881.5 MHz with 25 MHz bandwidth are 0.48 dB and 0.39 dB, respectively. The $P_{1dB}$ of the designed bandpass filter at TX and RX band are measured as 19.5 dBm and 23 dBm, respectively.

• Korean Journal of Materials Research
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• v.31 no.12
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• pp.710-718
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• 2021

Recently, due to high theoretical capacitance and excellent ion diffusion rate caused by the 2D layered crystal structure, transition metal hydroxides (TMHs) have generated considerable attention as active materials in supercapacitors (or electrochemical capacitors). However, TMHs should be designed using morphological or structural modification if they are to be used as active materials in supercapacitors, because they have insulation properties that induce low charge transfer rate. This study aims to modify the morphological structure for high cycling stability and fast charge storage kinetics of TMHs through the use of nickel cobalt hydroxide [NiCo(OH)₂] decorated on nickel foam. Among the samples used, needle-like NiCo(OH)₂ decorated on nickel foam offers a high specific capacitance (1110.9 F/g at current density of 0.5 A/g) with good rate capability (1110.9 - 746.7 F/g at current densities of 0.5 - 10.0 A/g). Moreover, at a high current density (10.0 A/g), a remarkable capacitance (713.8 F/g) and capacitance retention of 95.6% after 5000 cycles are noted. These results are attributed to high charge storage sites of needle-like NiCo(OH)₂ and uniformly grown NiCo(OH)₂ on nickel foam surface.

• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.176-179
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• 1989

The optimization of the monolithic pin-FET receiver is discussed, with emphasis on the sensitivity and bandwidth. The amplifier circuit, bias resistance, total input capacitance, and transconductance of FET for the 2 Gbps transmission are calculated.

• Journal of Electrochemical Science and Technology
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• v.11 no.2
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• pp.148-154
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• 2020

Highly ordered mesoporous manganese oxide films were electrodeposited onto indium tin oxide coated (ITO) glass using sodium dodecyl sulfate (SDS) and ethylene glycol (EG) which were used as a templating agent and stabilizer for the formation of micelle, respectively. The manganese oxide films synthesized with surfactant templating exhibited a highly mesoporous structure with a long-range order, which was confirmed by SAXRD and TEM analysis. The unique porous structure offers a more favorable diffusion pathway for electrolyte transportation and excellent ionic conductivity. Among the synthesized samples, Mn₂O₃-SDS+EG exhibited the best electrochemical performance for a supercapacitor in the wide range of scan rate, which was attributed to the well-developed mesoporous structure. The Mn₂O₃ prepared with SDS and EG displayed an outstanding capacitance of 72.04 F g^-1, which outperform non-porous Mn₂O₃ (32.13 F g^-1) at a scan rate of 10 mV s^-1.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.10
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• pp.687-692
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• 1999

A new technique to measure low level capacitance variations of the gyroscope is proposed and verified by computer simulation. It is based on the new CV(capacitance-voltage) converter circuit biased by dc current source and the peak detector without low pass filter. The CV converter biased by dc current source provides good signal-to-noise ratio and this setup of the detection circuitry without low pass filter makes it possible to provide short settling time, that is, higher speed of measurement and wide operation range if only a few parameters are adjusted. The key parameters that affect the performance of the detection circuitry are illustrated and computer simulation results are presented. The demonstrated detection circuitry shows linear response from 10 fF to 130 fF at 10 kHz and shows good linearity.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.7
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• pp.82-88
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• 1993

This paper describes fabrication of relative type capacitive pressure sensor to be in great demand for many fields. The fabricated sensor consists of two parts` a sensing diaphragm and a pyrox glass cover. The sensor size is 4.5${\times}3.4mm$^{2})$ and 400$\mu$m thick. To improve the nonlinearity, this sensor is designed a rectangular silicon diaphragm with a center boss structure, and in order to improve the temperature characteristics of the sensor in a packaging process, the sensing element is mounted on the pyrex glass support. Some suggestions toward the design and fabrication of improved sensors have been presented. The zero pressure capacitance, Co of sensor is 26.57pF, and the change of capacitance, ${\Delta}$C is 1.55pF from 0Kgf/Cm$^{2}$ to 1Kgf/Cm$^{2}$ at room temperature. The nonlinearity of the sensor output with center boss diaphragm is 1.29%F.S., and thermal zero shift and thermal sensitivity shift is less than 1.43%F.S./$^{\circ}C$and 0.14% F.S./$^{\circ}C$, respectively.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.703-706
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• 1998

This paper presents an efficient substrate-bias generator(SBG)for low-power, high-density DRAM's The proposed SBG can supply stable voltage with switching the supply voltage of driving circuit, and it can substitude the small capacitance for the large capacitance. The charge pumping circuit of the SBG suffere no VT loss and is to be applicable to low-voltage DRAM's. Also it can reduce the power consumption to make VBB because of it's high pumping efficiency. Using biasing voltage with positive temperature coefficient, VBB level detecting circuit can detect constant value of VBB against temperature variation. VBB level during VBB maintaining period varies 0.19% and the power dissipation during this period is 0.16mw. Charge pumping circuit can make VBB level up to -1.47V using VCC-1.5V, and do charge pumping operation one and half faster than the conventional ones. The temperature dependency of the VBB level detecting circuit is 0.34%. Therefore the proposed SBG is expected to supply a stable VBB with less power consumption when it is used in low power DRAM's.