• Journal of Korean Society on Water Environment
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• v.28 no.5
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• pp.639-645
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• 2012

The purpose of this study is to identify the possibility of the CMP wastewater treatment from semiconductor fabrication under operating tubular membrane with coagulants. To find suitable coagulants treating CMP wastewater, we conducted Jar-test. After Jar-test experiments suitable coagulants are PAC(17%), $Ca(OH)_2$ and optimum coagulant dosage is PAC(17%) 10mg/L, $Ca(OH)_2$ 110 ~ 120mg/L. Based on these results, the tubular membrane was applied to CMP wastewater, the turbidity removal efficiency is $Ca(OH)_2$ > PAC(17%) > Nothing. The fast cross-flow velocity and backwash process what are operating characteristics of tubular membrane can be stable CMP wastewater treatment. But when the coagulant and tubular membrane are used at the same time, the withdraw and treatment of the CMP wastewater are possibile. However further treatment process needs if treated water will be used for semiconductor fabrications.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.47-51
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• 2013

Chemical mechanical polishing (CMP) has become one of the key processes in wafer level stacking technology for 3D stacked IC. In this study, two-step CMP process was proposed to polish $Cu/SiO_2$ hybrid bonding surface, that is, Cu CMP was followed by $SiO_2$ CMP to minimize Cu dishing. As a result, Cu dishing was reduced down to $100{\sim}200{\AA}$ after $SiO_2$ CMP and surface roughness was also improved. The bonding interface showed no noticeable dishing or interface line, implying high bonding strength.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.81-85
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• 2013

Wafer stacking technology becomes more important for the next generation IC technology. It requires new process development such as TSV, wafer bonding, and wafer thinning and also needs to resolve wafer warpage, power delivery, and thermo-mechanical reliability for high volume manufacturing. In this study, Cu CMP which is the key process for wafer bonding has been studied using Cu CMP and oxide CMP processes. Wafer samples were fabricated on 8" Si wafer using a damascene process. Cu dishing after Cu CMP and oxide CMP was $180{\AA}$ in average and the total height from wafer surface to bump surface was approximately $2000{\AA}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.15-18
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• 2002

To achieve the global planarization, CMP Technology has been used to the next generation semiconductor process, and the study made tremendous progress up to date. As the device demension shrinked， CMP Technology has been applied in a various way and more people interested in this field to simplify the process. To attain the goal for safer 0.13um or below 10 nano process, many of those expected task must be solved. By describing this current CMP process issue and future trend for the CMP planarization process, It personally hope that this paper would help to the people who has concerns for the next generation semiconductor manufacturing industry in common.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.37-41
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• 2012

The wafer level stacking with Cu-to-Cu bonding becomes an important technology for high density DRAM stacking, high performance logic stacking, or heterogeneous chip stacking. Cu CMP becomes one of key processes to be developed for optimized Cu bonding process. For the ultra low-k dielectrics used in the advanced logic applications, Ti barrier has been preferred due to its good compatibility with porous ultra low-K dielectrics. But since Ti is electrochemically reactive to Cu CMP slurries, it leads to a new challenge to Cu CMP. In this study Ti barrier/Cu interconnection structure has been investigated for the wafer level 3D integration. Cu CMP wafers have been fabricated by a damascene process and two types of slurry were compared. The slurry selectivity to $SiO_2$ and Ti and removal rate were measured. The effect of metal line width and metal density were evaluated.

• Mass Spectrometry Letters
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• v.4 no.4
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• pp.67-70
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• 2013

The Cu-binding site in the $[Cu{\cdot}dCMP{\cdot}dCMP-H]^{1-}$ complex was investigated. The tandem mass (MS/MS) spectra of the [$[Cu{\cdot}dCMP{\cdot}dCMP-H]^{1-}$ parent ion showed $[dCMP{\cdot}Cu{\cdot}H_2PO_4+CONH]^{1-}$ fragment ions. Therefore, we propose that the Cu cation is simultaneously coordinated to the phosphate site and cytosine moiety in the stable geometry of the $[Cu{\cdot}dCMP{\cdot}dCMP-H]^{1-}$ complex. Three geometries for the complex were considered in an attempt to optimize the structure of the $[Cu{\cdot}dCMP{\cdot}dCMP-H]^{1-}$ complex. The ab initio calculations were performed at the $B3LYP/6-311G^{**}$ level.

• Biotechnology and Bioprocess Engineering:BBE
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• v.10 no.3
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• pp.242-247
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• 2005

Caseinomacropeptide (CMP) is a glycopeptide of 64 amino acid residues derived from the C-terminal of mammalian milk K-casein. Recently, human CMP (hCMP) was produced from the recombinant yeast Saccharomyces cerevisiae. In this study, the antiobesity activity of the recombinant hCMP (rhCMP) was investigated in vivo using Sprague-Dawley rats. The rhCMP did not affect the rats fed with a normal fat diet (fat content, $5.0\%$), but decreased the body weight gain of the rats fed with a high fat diet (fat content, $20\%$) by up to $19\%$. Autopsies revealed that the weights of the liver, kidney and adipose tissues decreased when the rats were given the rhCMP, which also reduced the lipid concentrations in the plasma and liver, but enhanced the fecal excretion of lipids. These results suggest that rhCMP prevent the accumulation of lipid by stimulating its fecal excretion, so could be used as a food supplement to alleviate the obesity problem caused by a high fat diet.

• Tribology and Lubricants
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• v.37 no.6
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• pp.208-212
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• 2021

Chemical mechanical polishing (CMP) is a key technology used for the global planarization of thin films in semiconductor production and smoothing the surface of substrate materials. CMP is a type of hybrid process using a material removal mechanism that forms a chemically reacted layer on the surface of a material owing to chemical elements included in a slurry and mechanically removes the chemically reacted layer using abrasive particles. Sapphire is known as a material that requires considerable time to remove materials through CMP owing to its high hardness and chemical stability. This study introduces a technology using electrolytic ionization and ultraviolet (UV) light in sapphire CMP and compares it with the existing CMP method from the perspective of the material removal rate (MRR). The technology proposed in the study experimentally confirms that the MRR of sapphire CMP can be increased by approximately 29.9, which is judged as a result of the generation of hydroxyl radicals (·OH) in the slurry. In the future, studies from various perspectives, such as the material removal mechanism and surface chemical reaction analysis of CMP technology using electrolytic ionization and UV, are required, and a tribological approach is also required to understand the mechanical removal of chemically reacted layers.

• Korean Journal of Food Science and Technology
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• v.28 no.1
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• pp.99-104
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• 1996

Carbohydrate-free caseinomacropeptide (CMP) was isolated from the sweet whey powder by a precipitation method using 12% trichloroacetic acid. The yield of carbohydrate-free CMP was 2.7 g from 100 g sweet whey powder. The electrophoretic pattern and the amino acid analysis of CMP showed that isolated CMP was quite pure, indicating the precipitation with 12% trichloroacetic acid was very effective for isolating carbohydrate-free CMP from the sweet whey powder. Trypsin, covalently immobilized on pore glass beads by carbodiimide (EDC) method, was 20mg per 1g glass beads. CMP was almost completely hydrolyzed by soluble trypsin in 24hr, but not by immobilized trypsin. The tryptic hydrolysates were fractionated on a Bio-Gel P 4 column $(1.5{\times}120\;cm)$and separated peptides were tested for their capacities to inhibit platelet aggregation using a aggregometer. The hydrolysate obtained from CMP after 24hr digestion by immobilized trypsin showed the highest activity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.376-377
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• 2006

Chemical Mechanical Planarization (CMP) has emerged as an enabling technology for the manufacturing of multi-level metal interconnects used in high-density Integrated Circuits (IC). Recently, multi-level structures have been also widely used m the MEMS device such as micro engines, pressure sensors, micromechanical fluid pumps, micro mirrors and micro lenses. Especially, among the thin films available in IC technologies, polysilicon has probably found the widest range of uses in silicon technology based MEMS. This paper presents the characteristic of polysilicon CMP for multi-level MEMS structures. Two-step CMP process verifies that is possible to decrease dishing amount with two type of slurries characteristics. This approach is attractive because two-step CMP process can be decreased dishing amount considerably more then just one CMP process.